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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MUR110S M4GDIODE GEN PURP 100V 1A DO214AA Taiwan Semiconductor Corporation |
3,977 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 50 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 875 mV @ 1 A | |
|
|
MUR115S M4GDIODE GEN PURP 150V 1A DO214AA Taiwan Semiconductor Corporation |
3,700 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 50 µA @ 150 V | 150 V | 1A | -55°C ~ 175°C | 875 mV @ 1 A | |
|
|
MUR120S M4GDIODE GEN PURP 200V 1A DO214AA Taiwan Semiconductor Corporation |
3,449 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 50 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 875 mV @ 1 A | |
|
|
MUR140S M4GDIODE GEN PURP 400V 1A DO214AA Taiwan Semiconductor Corporation |
3,094 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 150 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A | |
|
|
MUR160S M4GDIODE GEN PURP 600V 1A DO214AA Taiwan Semiconductor Corporation |
2,552 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 150 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A | |
|
LL4148 L0GDIODE GP 75V 150MA MINIMELF Taiwan Semiconductor Corporation |
2,810 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 75 V | 150mA | -65°C ~ 175°C | 1 V @ 50 mA | |
|
|
S3DBHM4GDIODE GEN PURP 200V 3A DO214AA Taiwan Semiconductor Corporation |
2,686 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A |
|
|
S3GBHM4GDIODE GEN PURP 400V 3A DO214AA Taiwan Semiconductor Corporation |
3,355 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A |
|
|
S3JBHM4GDIODE GEN PURP 600V 3A DO214AA Taiwan Semiconductor Corporation |
2,512 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A |
|
|
S3KBHM4GDIODE GEN PURP 800V 3A DO214AA Taiwan Semiconductor Corporation |
2,049 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A |
|
SS26LHRVGDIODE SCHOTTKY 60V 2A SUB SMA Taiwan Semiconductor Corporation |
2,960 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A |
|
|
S3MBHM4GDIODE GEN PURP 3A DO214AA Taiwan Semiconductor Corporation |
3,988 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 1000 V | - | 3A | -55°C ~ 150°C | 1.15 V @ 3 A |
|
RB520G-30 RLGDIODE SCHOTTKY 30V 100MA SOD723 Taiwan Semiconductor Corporation |
2,621 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | - | - | 500 nA @ 10 V | 30 V | 100mA | 125°C (Max) | 450 mV @ 10 mA | |
|
SSL12 M2GDIODE SCHOTTKY 20V 1A DO214AC Taiwan Semiconductor Corporation |
3,912 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 390 mV @ 1 A | |
|
|
SSL13 M2GDIODE SCHOTTKY 30V 1A DO214AC Taiwan Semiconductor Corporation |
2,468 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 390 mV @ 1 A | |
|
|
SSL14 M2GDIODE SCHOTTKY 40V 1A DO214AC Taiwan Semiconductor Corporation |
3,568 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 390 mV @ 1 A | |
|
|
S2DA M2GDIODE GEN PURP 200V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,491 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.1 V @ 1.5 A | |
|
SR505 B0GDIODE SCHOTTKY 50V 5A DO201AD Taiwan Semiconductor Corporation |
2,318 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 700 mV @ 5 A | |
|
SFF1001GAHC0GDIODE GEN PURP 50V 10A ITO220AB Taiwan Semiconductor Corporation |
3,054 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 10A | -55°C ~ 150°C | 975 mV @ 5 A |
|
|
ES1CLHRFGDIODE GEN PURP 150V 1A SUB SMA Taiwan Semiconductor Corporation |
2,423 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
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