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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
HER303G B0G DIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation	3,161	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	50 ns	10 µA @ 200 V	200 V	3A	-55°C ~ 150°C	1 V @ 3 A
SS23LHRTG DIODE SCHOTTKY 30V 2A SUB SMA Taiwan Semiconductor Corporation	2,538	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 30 V	30 V	2A	-55°C ~ 150°C	500 mV @ 2 A
SR505HB0G DIODE SCHOTTKY 50V 5A DO201AD Taiwan Semiconductor Corporation	3,208	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 50 V	50 V	5A	-55°C ~ 150°C	700 mV @ 5 A
SFF1001GHC0G DIODE GEN PURP 50V 10A ITO220AB Taiwan Semiconductor Corporation	2,426	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	10A	-55°C ~ 150°C	975 mV @ 5 A
UF5JFC C0G DIODE GEN PURP 600V 5A ITO220AC Taiwan Semiconductor Corporation	2,504	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	30pF @ 4V, 1MHz	25 ns	30 µA @ 600 V	600 V	5A	-55°C ~ 150°C	2.8 V @ 5 A
ES1DHR3G DIODE GEN PURP 200V 1A DO214AC Taiwan Semiconductor Corporation	3,245	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	16pF @ 4V, 1MHz	35 ns	5 µA @ 200 V	200 V	1A	-55°C ~ 150°C	950 mV @ 1 A
HER304G B0G DIODE GEN PURP 300V 3A DO201AD Taiwan Semiconductor Corporation	2,710	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	50 ns	10 µA @ 300 V	300 V	3A	-55°C ~ 150°C	1 V @ 3 A
SS24L MQG DIODE SCHOTTKY 40V 2A SUB SMA Taiwan Semiconductor Corporation	3,817	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 40 V	40 V	2A	-55°C ~ 150°C	500 mV @ 2 A
SR506 B0G DIODE SCHOTTKY 60V 5A DO201AD Taiwan Semiconductor Corporation	2,955	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 60 V	60 V	5A	-55°C ~ 150°C	700 mV @ 5 A
SFF1002G C0G DIODE GEN PURP 100V 10A ITO220AB Taiwan Semiconductor Corporation	3,324	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	10A	-55°C ~ 150°C	975 mV @ 5 A
ES1DL RFG DIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation	2,804	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	10pF @ 1V, 1MHz	35 ns	5 µA @ 200 V	200 V	1A	-55°C ~ 150°C	950 mV @ 1 A
HER305G B0G DIODE GEN PURP 400V 3A DO201AD Taiwan Semiconductor Corporation	2,755	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	50 ns	10 µA @ 400 V	400 V	3A	-55°C ~ 150°C	1.3 V @ 3 A
SS24L MTG DIODE SCHOTTKY 40V 2A SUB SMA Taiwan Semiconductor Corporation	3,361	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 40 V	40 V	2A	-55°C ~ 150°C	500 mV @ 2 A
SR506HB0G DIODE SCHOTTKY 60V 5A DO201AD Taiwan Semiconductor Corporation	2,540	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 60 V	60 V	5A	-55°C ~ 150°C	700 mV @ 5 A
SFF1002GA C0G DIODE GEN PURP 100V 10A ITO220AB Taiwan Semiconductor Corporation	2,618	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	10A	-55°C ~ 150°C	975 mV @ 5 A
ES1DLHR3G DIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation	3,487	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	10pF @ 4V, 1MHz	35 ns	5 µA @ 200 V	200 V	1A	-55°C ~ 150°C	950 mV @ 1 A
HER306G B0G DIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation	3,033	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	35pF @ 4V, 1MHz	75 ns	10 µA @ 600 V	600 V	3A	-55°C ~ 150°C	1.7 V @ 3 A
SS24L RQG DIODE SCHOTTKY 40V 2A SUB SMA Taiwan Semiconductor Corporation	2,704	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 40 V	40 V	2A	-55°C ~ 150°C	500 mV @ 2 A
SR509 B0G DIODE SCHOTTKY 90V 5A DO201AD Taiwan Semiconductor Corporation	2,420	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 90 V	90 V	5A	-55°C ~ 150°C	850 mV @ 5 A
SFF1002GAHC0G DIODE GEN PURP 100V 10A ITO220AB Taiwan Semiconductor Corporation	3,987	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	10A	-55°C ~ 150°C	975 mV @ 5 A