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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
ES1GL RFG DIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation	2,270	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	8pF @ 1V, 1MHz	35 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
MUR160 B0G DIODE GEN PURP 600V 1A DO204AC Taiwan Semiconductor Corporation	2,294	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	27pF @ 4V, 1MHz	50 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 175°C	1.25 V @ 1 A
SS25L RTG DIODE SCHOTTKY 50V 2A SUB SMA Taiwan Semiconductor Corporation	2,661	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 50 V	50 V	2A	-55°C ~ 150°C	700 mV @ 2 A
SR802HB0G DIODE SCHOTTKY 20V 8A DO201AD Taiwan Semiconductor Corporation	2,422	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 20 V	20 V	8A	-55°C ~ 125°C	550 mV @ 8 A
SFF1005GA C0G DIODE GEN PURP 300V 10A ITO220AB Taiwan Semiconductor Corporation	2,128	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	10A	-55°C ~ 150°C	1.3 V @ 5 A
ES1GLHRFG DIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation	2,486	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	8pF @ 4V, 1MHz	35 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
MUR160A B0G DIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation	2,309	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	27pF @ 4V, 1MHz	50 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 175°C	1.25 V @ 1 A
SS25LHMQG DIODE SCHOTTKY 50V 2A SUB SMA Taiwan Semiconductor Corporation	2,088	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 50 V	50 V	2A	-55°C ~ 150°C	700 mV @ 2 A
SR803 B0G DIODE SCHOTTKY 30V 8A DO201AD Taiwan Semiconductor Corporation	3,510	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 30 V	30 V	8A	-55°C ~ 125°C	550 mV @ 8 A
SFF1005GAHC0G DIODE GEN PURP 300V 10A ITO220AB Taiwan Semiconductor Corporation	3,289	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	10A	-55°C ~ 150°C	1.3 V @ 5 A
ES1HL RFG DIODE GEN PURP 500V 1A SUB SMA Taiwan Semiconductor Corporation	3,693	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	8pF @ 1V, 1MHz	35 ns	5 µA @ 500 V	500 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
MUR160AHB0G DIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation	2,732	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	27pF @ 4V, 1MHz	50 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 175°C	1.25 V @ 1 A
SS25LHMTG DIODE SCHOTTKY 50V 2A SUB SMA Taiwan Semiconductor Corporation	2,578	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 50 V	50 V	2A	-55°C ~ 150°C	700 mV @ 2 A
SR803HB0G DIODE SCHOTTKY 30V 8A DO201AD Taiwan Semiconductor Corporation	2,695	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 30 V	30 V	8A	-55°C ~ 125°C	550 mV @ 8 A
SFF1005GHC0G DIODE GEN PURP 300V 10A ITO220AB Taiwan Semiconductor Corporation	3,742	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 0V, 1MHz	35 ns	10 µA @ 300 V	300 V	10A	-55°C ~ 150°C	1.3 V @ 10 A
ES1HR3G DIODE GEN PURP 500V 1A DO214AC Taiwan Semiconductor Corporation	3,904	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	16pF @ 4V, 1MHz	35 ns	5 µA @ 500 V	500 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
MUR160HB0G DIODE GEN PURP 600V 1A DO204AC Taiwan Semiconductor Corporation	3,641	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	27pF @ 4V, 1MHz	50 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 175°C	1.25 V @ 1 A
SS25LHRQG DIODE SCHOTTKY 50V 2A SUB SMA Taiwan Semiconductor Corporation	2,495	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 50 V	50 V	2A	-55°C ~ 150°C	700 mV @ 2 A
SR804 B0G DIODE SCHOTTKY 40V 8A DO201AD Taiwan Semiconductor Corporation	3,549	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	500 µA @ 40 V	40 V	8A	-55°C ~ 125°C	550 mV @ 8 A
SFF1006GAHC0G DIODE GEN PURP 400V 10A ITO220AB Taiwan Semiconductor Corporation	2,262	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	10 µA @ 400 V	400 V	10A	-55°C ~ 150°C	1.3 V @ 5 A