Mais categorias de produtos

Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
ES1JHR3G DIODE GEN PURP 600V 1A DO214AC Taiwan Semiconductor Corporation	2,524	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	16pF @ 4V, 1MHz	35 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
MUR190 B0G DIODE GEN PURP 900V 1A DO204AC Taiwan Semiconductor Corporation	2,635	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	75 ns	5 µA @ 900 V	900 V	1A	-55°C ~ 175°C	1.7 V @ 1 A
SS25LHRTG DIODE SCHOTTKY 50V 2A SUB SMA Taiwan Semiconductor Corporation	3,603	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 50 V	50 V	2A	-55°C ~ 150°C	700 mV @ 2 A
SR804HB0G DIODE SCHOTTKY 40V 8A DO201AD Taiwan Semiconductor Corporation	2,110	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 40 V	40 V	8A	-55°C ~ 125°C	550 mV @ 8 A
SFF1006GHC0G DIODE GEN PURP 400V 10A ITO220AB Taiwan Semiconductor Corporation	3,739	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 0V, 1MHz	35 ns	10 µA @ 400 V	400 V	10A	-55°C ~ 150°C	1.3 V @ 10 A
ES1JL RFG DIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation	2,622	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	8pF @ 1V, 1MHz	35 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
MUR190A B0G DIODE GEN PURP 900V 1A DO204AL Taiwan Semiconductor Corporation	2,006	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	75 ns	5 µA @ 900 V	900 V	1A	-55°C ~ 175°C	1.7 V @ 1 A
SS26L MQG DIODE SCHOTTKY 60V 2A SUB SMA Taiwan Semiconductor Corporation	2,165	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 60 V	60 V	2A	-55°C ~ 150°C	700 mV @ 2 A
SR805 B0G DIODE SCHOTTKY 50V 8A DO201AD Taiwan Semiconductor Corporation	2,806	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 50 V	50 V	8A	-55°C ~ 150°C	700 mV @ 8 A
SFF1007G C0G DIODE GEN PURP 500V 10A ITO220AB Taiwan Semiconductor Corporation	3,536	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 0V, 1MHz	35 ns	10 µA @ 500 V	500 V	10A	-55°C ~ 150°C	1.7 V @ 5 A
ES1JLHR3G DIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation	3,695	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	8pF @ 4V, 1MHz	35 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
MUR190AHB0G DIODE GEN PURP 900V 1A DO204AL Taiwan Semiconductor Corporation	2,692	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	75 ns	5 µA @ 900 V	900 V	1A	-55°C ~ 175°C	1.7 V @ 1 A
SS26L MTG DIODE SCHOTTKY 60V 2A SUB SMA Taiwan Semiconductor Corporation	2,374	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 60 V	60 V	2A	-55°C ~ 150°C	700 mV @ 2 A
SR805HB0G DIODE SCHOTTKY 50V 8A DO201AD Taiwan Semiconductor Corporation	3,796	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 50 V	50 V	8A	-55°C ~ 150°C	700 mV @ 8 A
SFF1007GA C0G DIODE GEN PURP 500V 10A ITO220AB Taiwan Semiconductor Corporation	3,858	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	10A	-55°C ~ 150°C	1.7 V @ 5 A
ES1JLHRFG DIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation	3,929	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	8pF @ 4V, 1MHz	35 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
MUR190HB0G DIODE GEN PURP 900V 1A DO204AC Taiwan Semiconductor Corporation	3,945	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	75 ns	5 µA @ 900 V	900 V	1A	-55°C ~ 175°C	1.7 V @ 1 A
SS26L RQG DIODE SCHOTTKY 60V 2A SUB SMA Taiwan Semiconductor Corporation	3,939	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 60 V	60 V	2A	-55°C ~ 150°C	700 mV @ 2 A
SR806 B0G DIODE SCHOTTKY 60V 8A DO201AD Taiwan Semiconductor Corporation	3,859	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 60 V	60 V	8A	-55°C ~ 150°C	700 mV @ 8 A
SFF1007GAHC0G DIODE GEN PURP 500V 10A ITO220AB Taiwan Semiconductor Corporation	3,480	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	10A	-55°C ~ 150°C	1.7 V @ 5 A