Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
UF1AHB0G

UF1AHB0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation
3,150 -

RFQ

UF1AHB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
ES2BHR5G

ES2BHR5G

DIODE GEN PURP 100V 2A DO214AA

Taiwan Semiconductor Corporation
3,000 -

RFQ

ES2BHR5G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 25pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 2A -55°C ~ 150°C 950 mV @ 2 A
MUR4L40HB0G

MUR4L40HB0G

DIODE GEN PURP 400V 4A DO201AD

Taiwan Semiconductor Corporation
2,652 -

RFQ

MUR4L40HB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 4A -55°C ~ 175°C 1.28 V @ 4 A
SS29LHMQG

SS29LHMQG

DIODE SCHOTTKY 90V 2A SUB SMA

Taiwan Semiconductor Corporation
2,667 -

RFQ

SS29LHMQG

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 90 V 90 V 2A -55°C ~ 150°C 850 mV @ 2 A
UF1B B0G

UF1B B0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation
3,379 -

RFQ

UF1B B0G

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
ES2CAHR3G

ES2CAHR3G

DIODE GEN PURP 150V 2A DO214AC

Taiwan Semiconductor Corporation
2,344 -

RFQ

ES2CAHR3G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 25pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 2A -55°C ~ 150°C 950 mV @ 2 A
MUR4L60 B0G

MUR4L60 B0G

DIODE GEN PURP 600V 4A DO201AD

Taiwan Semiconductor Corporation
2,127 -

RFQ

MUR4L60 B0G

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 600 V 600 V 4A -55°C ~ 175°C 1.28 V @ 4 A
SS29LHMTG

SS29LHMTG

DIODE SCHOTTKY 90V 2A SUB SMA

Taiwan Semiconductor Corporation
3,541 -

RFQ

SS29LHMTG

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 90 V 90 V 2A -55°C ~ 150°C 850 mV @ 2 A
UF1BHB0G

UF1BHB0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation
3,323 -

RFQ

UF1BHB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
ES2CHR5G

ES2CHR5G

DIODE GEN PURP 150V 2A DO214AA

Taiwan Semiconductor Corporation
3,994 -

RFQ

ES2CHR5G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 25pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 2A -55°C ~ 150°C 950 mV @ 2 A
MUR4L60HB0G

MUR4L60HB0G

DIODE GEN PURP 600V 4A DO201AD

Taiwan Semiconductor Corporation
3,977 -

RFQ

MUR4L60HB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 600 V 600 V 4A -55°C ~ 175°C 1.28 V @ 4 A
SS29LHRQG

SS29LHRQG

DIODE SCHOTTKY 90V 2A SUB SMA

Taiwan Semiconductor Corporation
3,908 -

RFQ

SS29LHRQG

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 90 V 90 V 2A -55°C ~ 150°C 850 mV @ 2 A
UF1D B0G

UF1D B0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation
3,610 -

RFQ

UF1D B0G

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
ES2DHR5G

ES2DHR5G

DIODE GEN PURP 200V 2A DO214AA

Taiwan Semiconductor Corporation
2,797 -

RFQ

ES2DHR5G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 25pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
SF11G B0G

SF11G B0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation
2,656 -

RFQ

SF11G B0G

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 950 mV @ 1 A
SS29LHRTG

SS29LHRTG

DIODE SCHOTTKY 90V 2A SUB SMA

Taiwan Semiconductor Corporation
2,251 -

RFQ

SS29LHRTG

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 90 V 90 V 2A -55°C ~ 150°C 850 mV @ 2 A
UF1DHB0G

UF1DHB0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation
3,289 -

RFQ

UF1DHB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
ES2DV R5G

ES2DV R5G

DIODE GEN PURP 200V 2A DO214AA

Taiwan Semiconductor Corporation
2,580 -

RFQ

ES2DV R5G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 25pF @ 4V, 1MHz 20 ns 5 µA @ 200 V 200 V 2A -55°C ~ 150°C 900 mV @ 2 A
SF11GHB0G

SF11GHB0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation
3,429 -

RFQ

SF11GHB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 950 mV @ 1 A
SS310L MQG

SS310L MQG

DIODE SCHOTTKY 100V 3A SUB SMA

Taiwan Semiconductor Corporation
3,644 -

RFQ

SS310L MQG

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 100 V 100 V 3A -55°C ~ 150°C 850 mV @ 3 A
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1800+ Fabricantes em todo o mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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