Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
ES1LD R3G

ES1LD R3G

DIODE GEN PURP 200V 1A DO214AC

Taiwan Semiconductor Corporation
2,661 -

RFQ

ES1LD R3G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 16pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 950 mV @ 1 A
MUR420 B0G

MUR420 B0G

DIODE GEN PURP 200V 4A DO201AD

Taiwan Semiconductor Corporation
3,844 -

RFQ

MUR420 B0G

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 25 ns 5 µA @ 200 V 200 V 4A -55°C ~ 175°C 890 mV @ 4 A
SS26L RTG

SS26L RTG

DIODE SCHOTTKY 60V 2A SUB SMA

Taiwan Semiconductor Corporation
3,239 -

RFQ

SS26L RTG

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 60 V 60 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR806HB0G

SR806HB0G

DIODE SCHOTTKY 60V 8A DO201AD

Taiwan Semiconductor Corporation
2,661 -

RFQ

SR806HB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 8A -55°C ~ 150°C 700 mV @ 8 A
SFF1007GHC0G

SFF1007GHC0G

DIODE GEN PURP 500V 10A ITO220AB

Taiwan Semiconductor Corporation
3,591 -

RFQ

SFF1007GHC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 50pF @ 0V, 1MHz 35 ns 10 µA @ 500 V 500 V 10A -55°C ~ 150°C 1.7 V @ 5 A
ES1LDHR3G

ES1LDHR3G

DIODE GEN PURP 200V 1A DO214AC

Taiwan Semiconductor Corporation
3,074 -

RFQ

ES1LDHR3G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 16pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 950 mV @ 1 A
MUR420HB0G

MUR420HB0G

DIODE GEN PURP 200V 4A DO201AD

Taiwan Semiconductor Corporation
3,464 -

RFQ

MUR420HB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 25 ns 5 µA @ 200 V 200 V 4A -55°C ~ 175°C 890 mV @ 4 A
SS26LHMQG

SS26LHMQG

DIODE SCHOTTKY 60V 2A SUB SMA

Taiwan Semiconductor Corporation
2,096 -

RFQ

SS26LHMQG

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 60 V 60 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR809 B0G

SR809 B0G

DIODE SCHOTTKY 90V 8A DO201AD

Taiwan Semiconductor Corporation
2,087 -

RFQ

SR809 B0G

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 8A -55°C ~ 150°C 920 mV @ 8 A
SFF1008GAHC0G

SFF1008GAHC0G

DIODE GEN PURP 600V 10A ITO220AB

Taiwan Semiconductor Corporation
2,150 -

RFQ

SFF1008GAHC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 600 V 600 V 10A -55°C ~ 150°C 1.7 V @ 5 A
ES1LG R3G

ES1LG R3G

DIODE GEN PURP 400V 1A DO214AC

Taiwan Semiconductor Corporation
3,990 -

RFQ

ES1LG R3G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 18pF @ 4V, 1MHz 35 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
MUR440 B0G

MUR440 B0G

DIODE GEN PURP 400V 4A DO201AD

Taiwan Semiconductor Corporation
2,487 -

RFQ

MUR440 B0G

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 4A -55°C ~ 175°C 1.28 V @ 4 A
SS26LHMTG

SS26LHMTG

DIODE SCHOTTKY 60V 2A SUB SMA

Taiwan Semiconductor Corporation
2,462 -

RFQ

SS26LHMTG

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 60 V 60 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR809HB0G

SR809HB0G

DIODE SCHOTTKY 90V 8A DO201AD

Taiwan Semiconductor Corporation
2,852 -

RFQ

SR809HB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 8A -55°C ~ 150°C 920 mV @ 8 A
SFF1008GHC0G

SFF1008GHC0G

DIODE GEN PURP 600V 10A ITO220AB

Taiwan Semiconductor Corporation
2,874 -

RFQ

SFF1008GHC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 0V, 1MHz 35 ns 10 µA @ 600 V 600 V 10A -55°C ~ 150°C 1.7 V @ 10 A
ES1LGHR3G

ES1LGHR3G

DIODE GEN PURP 400V 1A DO214AC

Taiwan Semiconductor Corporation
2,448 -

RFQ

ES1LGHR3G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 18pF @ 4V, 1MHz 35 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
MUR440HB0G

MUR440HB0G

DIODE GEN PURP 400V 4A DO201AD

Taiwan Semiconductor Corporation
2,798 -

RFQ

MUR440HB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 4A -55°C ~ 175°C 1.28 V @ 4 A
SS26LHRQG

SS26LHRQG

DIODE SCHOTTKY 60V 2A SUB SMA

Taiwan Semiconductor Corporation
2,645 -

RFQ

SS26LHRQG

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 60 V 60 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR810 B0G

SR810 B0G

DIODE SCHOTTKY 100V 8A DO201AD

Taiwan Semiconductor Corporation
2,833 -

RFQ

SR810 B0G

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 8A -55°C ~ 150°C 920 mV @ 8 A
SFF1601G C0G

SFF1601G C0G

DIODE GEN PURP 50V 16A ITO220AB

Taiwan Semiconductor Corporation
2,228 -

RFQ

SFF1601G C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 16A -55°C ~ 150°C 975 mV @ 8 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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