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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
ES1FL RFG DIODE GEN PURP 300V 1A SUB SMA Taiwan Semiconductor Corporation	3,170	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	8pF @ 1V, 1MHz	35 ns	5 µA @ 300 V	300 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
HER603G B0G DIODE GEN PURP 200V 6A R-6 Taiwan Semiconductor Corporation	2,931	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	50 ns	10 µA @ 200 V	200 V	6A	-55°C ~ 150°C	1 V @ 6 A
SS24LHRTG DIODE SCHOTTKY 40V 2A SUB SMA Taiwan Semiconductor Corporation	3,146	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 40 V	40 V	2A	-55°C ~ 150°C	500 mV @ 2 A
SR515HB0G DIODE SCHOTTKY 150V 5A DO201AD Taiwan Semiconductor Corporation	2,939	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	5A	-55°C ~ 150°C	1.05 V @ 5 A
SFF1003GHC0G DIODE GEN PURP 150V 10A ITO220AB Taiwan Semiconductor Corporation	3,255	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 150 V	150 V	10A	-55°C ~ 150°C	975 mV @ 5 A
ES1FLHR3G DIODE GEN PURP 300V 1A SUB SMA Taiwan Semiconductor Corporation	3,530	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	8pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
HER604G B0G DIODE GEN PURP 300V 6A R-6 Taiwan Semiconductor Corporation	3,271	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	50 ns	10 µA @ 300 V	300 V	6A	-55°C ~ 150°C	1 V @ 6 A
SS25L MQG DIODE SCHOTTKY 50V 2A SUB SMA Taiwan Semiconductor Corporation	3,768	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 50 V	50 V	2A	-55°C ~ 150°C	700 mV @ 2 A
SR520 B0G DIODE SCHOTTKY 200V 5A DO201AD Taiwan Semiconductor Corporation	3,026	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 200 V	200 V	5A	-55°C ~ 150°C	1.05 V @ 5 A
SFF1004GA C0G DIODE GEN PURP 200V 10A ITO220AB Taiwan Semiconductor Corporation	3,825	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	10A	-55°C ~ 150°C	975 mV @ 5 A
ES1FLHRFG DIODE GEN PURP 300V 1A SUB SMA Taiwan Semiconductor Corporation	2,766	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	8pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
HER605G B0G DIODE GEN PURP 400V 6A R-6 Taiwan Semiconductor Corporation	3,684	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	50 ns	10 µA @ 400 V	400 V	6A	-55°C ~ 150°C	1.3 V @ 6 A
SS25L MTG DIODE SCHOTTKY 50V 2A SUB SMA Taiwan Semiconductor Corporation	2,124	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 50 V	50 V	2A	-55°C ~ 150°C	700 mV @ 2 A
SR520HB0G DIODE SCHOTTKY 200V 5A DO201AD Taiwan Semiconductor Corporation	3,568	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 200 V	200 V	5A	-55°C ~ 150°C	1.05 V @ 5 A
SFF1004GAHC0G DIODE GEN PURP 200V 10A ITO220AB Taiwan Semiconductor Corporation	3,468	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	10A	-55°C ~ 150°C	975 mV @ 5 A
ES1GHR3G DIODE GEN PURP 400V 1A DO214AC Taiwan Semiconductor Corporation	2,782	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	16pF @ 4V, 1MHz	35 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
HER606G B0G DIODE GEN PURP 600V 6A R-6 Taiwan Semiconductor Corporation	3,996	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	65pF @ 4V, 1MHz	75 ns	10 µA @ 600 V	600 V	6A	-55°C ~ 150°C	1.7 V @ 6 A
SS25L RQG DIODE SCHOTTKY 50V 2A SUB SMA Taiwan Semiconductor Corporation	3,636	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 50 V	50 V	2A	-55°C ~ 150°C	700 mV @ 2 A
SR802 B0G DIODE SCHOTTKY 20V 8A DO201AD Taiwan Semiconductor Corporation	2,192	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 20 V	20 V	8A	-55°C ~ 125°C	550 mV @ 8 A
SFF1004GHC0G DIODE GEN PURP 200V 10A ITO220AB Taiwan Semiconductor Corporation	2,052	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	10A	-55°C ~ 150°C	975 mV @ 10 A