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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ES2GAHM2GDIODE GEN PURP 400V 2A DO214AC Taiwan Semiconductor Corporation |
3,638 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A |
|
|
ES2JA M2GDIODE GEN PURP 600V 2A DO214AC Taiwan Semiconductor Corporation |
2,068 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
|
UG2JA M2GDIODE GEN PURP 600V 2A DO214AC Taiwan Semiconductor Corporation |
2,393 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 55 ns | 2 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
SK315AHM2GDIODE SCHOTTKY 150V 3A DO214AC Taiwan Semiconductor Corporation |
2,544 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A |
|
|
SK320AHM2GDIODE SCHOTTKY 200V 3A DO214AC Taiwan Semiconductor Corporation |
3,720 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A |
|
ES15DLWHRQGDIODE, SUPER FAST Taiwan Semiconductor Corporation |
2,637 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 24pF @ 4V, 1MHz | 35 ns | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 950 mV @ 1.5 A |
|
SK320B M4GDIODE SCHOTTKY 200V 3A DO214AA Taiwan Semiconductor Corporation |
3,523 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |
|
|
ES15GLWHRQGDIODE, SUPER FAST Taiwan Semiconductor Corporation |
2,445 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 21pF @ 4V, 1MHz | 35 ns | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A |
|
|
SS210 M4GDIODE SCHOTTKY 100V 2A DO214AA Taiwan Semiconductor Corporation |
3,657 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A | |
|
|
ES15JLWHRQGDIODE, SUPER FAST Taiwan Semiconductor Corporation |
3,710 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.7 V @ 1.5 A |
|
|
SS23 M4GDIODE SCHOTTKY 30V 2A DO214AA Taiwan Semiconductor Corporation |
2,299 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 30 V | 30 V | 2A | -55°C ~ 125°C | 500 mV @ 2 A | |
|
|
SS24 M4GDIODE SCHOTTKY 40V 2A DO214AA Taiwan Semiconductor Corporation |
2,277 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 2A | -55°C ~ 125°C | 500 mV @ 2 A | |
|
|
SS26 M4GDIODE SCHOTTKY 60V 2A DO214AA Taiwan Semiconductor Corporation |
3,757 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A | |
|
|
HS2D M4GDIODE GEN PURP 200V 2A DO214AA Taiwan Semiconductor Corporation |
2,894 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
|
|
HS2F M4GDIODE GEN PURP 300V 2A DO214AA Taiwan Semiconductor Corporation |
3,216 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
|
SS12LSHRVGDIODE SCHOTTKY 20V 1A SOD123HE Taiwan Semiconductor Corporation |
2,634 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 400 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 450 mV @ 1 A | |
|
|
HS2G M4GDIODE GEN PURP 400V 2A DO214AA Taiwan Semiconductor Corporation |
2,677 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
SS14LSHRVGDIODE SCHOTTKY 40V 1A SOD123HE Taiwan Semiconductor Corporation |
3,510 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 400 µA @ 40 V | 40 V | 1A | -55°C ~ 150°C | 550 mV @ 1 A | |
|
|
HS2J M4GDIODE GEN PURP 600V 2A DO214AA Taiwan Semiconductor Corporation |
2,596 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
|
MUR105S M4GDIODE GEN PURP 50V 1A DO214AA Taiwan Semiconductor Corporation |
2,378 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 50 µA @ 50 V | 50 V | 1A | -55°C ~ 175°C | 875 mV @ 1 A |
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