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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UF1D R0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
2,899 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
UF1G R0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,775 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
BAS116 RFGDIODE GEN PURP 75V 200MA SOT23 Taiwan Semiconductor Corporation |
2,151 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 3 ns | 5 nA @ 75 V | 75 V | 200mA | -55°C ~ 150°C | 1.25 V @ 150 mA | |
|
|
UF1J R0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
3,665 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
UF1K R0GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
2,089 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
UF1M R0GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
2,416 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
UF4004 R0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
2,413 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
UF4005 R0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
2,367 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
HER204G R0GDIODE GEN PURP 300V 2A DO204AC Taiwan Semiconductor Corporation |
3,708 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
|
|
HER205G R0GDIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation |
2,410 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
HER206G R0GDIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation |
3,171 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
|
HER207G R0GDIODE GEN PURP 800V 2A DO204AC Taiwan Semiconductor Corporation |
2,783 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
|
HER208GDIODE GEN PURP 2A DO204AC Taiwan Semiconductor Corporation |
3,439 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
BYG21MHM2GDIODE AVALANCHE 1.5A DO214AC Taiwan Semiconductor Corporation |
2,425 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 13pF @ 4V, 1MHz | 120 ns | 1 µA @ 1000 V | - | 1.5A | -55°C ~ 150°C | 1.6 V @ 1.5 A | |
|
|
ES1DV M2GDIODE GEN PURP 200V 1A DO214AC Taiwan Semiconductor Corporation |
3,518 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 17pF @ 4V, 1MHz | 15 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A | |
|
|
SF18G R0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
2,290 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
SK315BHM4GDIODE SCHOTTKY 150V 3A DO214AA Taiwan Semiconductor Corporation |
3,429 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A |
|
|
SS215 M4GDIODE SCHOTTKY 150V 2A DO214AA Taiwan Semiconductor Corporation |
2,557 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
ES2DAHM2GDIODE GEN PURP 200V 2A DO214AC Taiwan Semiconductor Corporation |
3,103 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
|
ES2FAHM2GDIODE GEN PURP 300V 2A DO214AC Taiwan Semiconductor Corporation |
2,914 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A |
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