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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ESH2BA R3GDIODE GEN PURP 100V 1A DO214AC Taiwan Semiconductor Corporation |
3,777 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 200 V | 100 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A | |
|
SS36LHMTGDIODE SCHOTTKY 60V 3A SUB SMA Taiwan Semiconductor Corporation |
2,675 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A |
|
ESH2C R5GDIODE GEN PURP 150V 2A DO214AA Taiwan Semiconductor Corporation |
2,043 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 25pF @ 4V, 1MHz | 20 ns | 2 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 900 mV @ 2 A | |
|
|
SS36LHRQGDIODE SCHOTTKY 60V 3A SUB SMA Taiwan Semiconductor Corporation |
3,184 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A |
|
|
ESH2CA R3GDIODE GEN PURP 150V 1A DO214AC Taiwan Semiconductor Corporation |
3,528 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 200 V | 150 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A | |
|
|
SS36LHRTGDIODE SCHOTTKY 60V 3A SUB SMA Taiwan Semiconductor Corporation |
2,316 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A |
|
|
ESH2DA R3GDIODE GEN PURP 200V 1A DO214AC Taiwan Semiconductor Corporation |
2,004 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A | |
|
1N4001GHR0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
3,769 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
|
1N4002G R0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
2,203 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
1N4002GHR0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,283 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
|
1N4003G R0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
3,790 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
1N5399G A0GDIODE GEN PURP 1.5A DO204AC Taiwan Semiconductor Corporation |
2,873 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 1000 V | - | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
|
1N4003GHR0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
2,013 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
|
1N5399GHA0GDIODE GEN PURP 1.5A DO204AC Taiwan Semiconductor Corporation |
3,441 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 1000 V | - | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A |
|
|
1N4933G R0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
2,213 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
|
1N5400G A0GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
2,068 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
|
|
1N4933GHR0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
3,197 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
|
|
1N5400GHA0GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
2,057 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A |
|
|
1N4934G R0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
2,380 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
|
|
1N5401G A0GDIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation |
2,854 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A |
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