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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SF11G R0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
3,628 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
1N5821 A0GDIODE SCHOTTKY 30V 3A DO201AD Taiwan Semiconductor Corporation |
3,286 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 200pF @ 4V, 1MHz | - | 500 µA @ 30 V | 30 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | |
|
|
SF11GHR0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
3,881 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
1N5821HA0GDIODE SCHOTTKY 30V 3A DO201AD Taiwan Semiconductor Corporation |
3,370 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 200pF @ 4V, 1MHz | - | 500 µA @ 30 V | 30 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A |
|
|
SF12G R0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
2,629 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
1N5822 A0GDIODE SCHOTTKY 40V 3A DO201AD Taiwan Semiconductor Corporation |
2,818 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 200pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | 525 mV @ 3 A | |
|
|
SF12GHR0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
2,136 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
1N5822HA0GDIODE SCHOTTKY 40V 3A DO201AD Taiwan Semiconductor Corporation |
2,623 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 200pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | 525 mV @ 3 A |
|
|
SF13G R0GDIODE GEN PURP 150V 1A DO204AL Taiwan Semiconductor Corporation |
3,827 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
1T1G A0GDIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation |
2,841 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
SF13GHR0GDIODE GEN PURP 150V 1A DO204AL Taiwan Semiconductor Corporation |
2,770 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
1T2G A0GDIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation |
3,793 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
SF17G R0GDIODE GEN PURP 500V 1A DO204AL Taiwan Semiconductor Corporation |
2,111 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
1T3G A0GDIODE GEN PURP 200V 1A TS-1 Taiwan Semiconductor Corporation |
3,437 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
SF17GHR0GDIODE GEN PURP 500V 1A DO204AL Taiwan Semiconductor Corporation |
2,196 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
1T4G A0GDIODE GEN PURP 400V 1A TS-1 Taiwan Semiconductor Corporation |
3,346 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
1T5G A0GDIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation |
3,860 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
1T6G A0GDIODE GEN PURP 800V 1A TS-1 Taiwan Semiconductor Corporation |
3,028 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
UF1J A0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
2,306 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
1T7G A0GDIODE GEN PURP 1A TS-1 Taiwan Semiconductor Corporation |
2,173 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1 V @ 1 A |
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