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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UF4005 A0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
2,894 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
31DF4 A0GDIODE GEN PURP 400V 3A DO201AD Taiwan Semiconductor Corporation |
3,477 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 20 µA @ 400 V | 400 V | 3A | -40°C ~ 150°C | 1.7 V @ 3 A | |
|
HS3B V7GDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
3,257 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | - | |
|
|
UF4005HA0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
3,577 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
31DF6 A0GDIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation |
2,650 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 20 µA @ 600 V | 600 V | 3A | -40°C ~ 150°C | 1.7 V @ 3 A | |
|
|
HS3D V7GDIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation |
2,157 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | - | |
|
|
UF4006 A0GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
3,135 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
3A100 A0GDIODE GEN PURP 3A DO204AC Taiwan Semiconductor Corporation |
2,159 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 27pF @ 4V, 1MHz | - | 5 µA @ 1000 V | - | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
|
|
HS3F V7GDIODE GEN PURP 300V 3A DO214AB Taiwan Semiconductor Corporation |
2,796 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | - | |
|
|
UF4006HA0GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
3,697 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
3A100HA0GDIODE GEN PURP 3A DO204AC Taiwan Semiconductor Corporation |
3,076 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 27pF @ 4V, 1MHz | - | 5 µA @ 1000 V | - | 3A | -55°C ~ 150°C | 1.1 V @ 3 A |
|
|
HS3J V7GDIODE GEN PURP 600V 3A DO214AB Taiwan Semiconductor Corporation |
3,168 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | - | |
|
|
UF4007HA0GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
2,510 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
3A60 A0GDIODE GEN PURP 600V 3A DO204AC Taiwan Semiconductor Corporation |
3,174 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 27pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
|
|
HS5A V6GDIODE GEN PURP 50V 5A DO214AB Taiwan Semiconductor Corporation |
3,710 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | - | |
|
1T1G A1GDIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation |
3,935 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
3A60HA0GDIODE GEN PURP 600V 3A DO204AC Taiwan Semiconductor Corporation |
3,379 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 27pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A |
|
|
HS5B V6GDIODE GEN PURP 100V 5A DO214AB Taiwan Semiconductor Corporation |
2,782 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | - | |
|
|
1T2G A1GDIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation |
2,442 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
6A05G A0GDIODE GEN PURP 50V 6A R-6 Taiwan Semiconductor Corporation |
3,356 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 6A | -55°C ~ 150°C | 1.1 V @ 6 A |
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