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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
6A20GHA0GDIODE GEN PURP 200V 6A R-6 Taiwan Semiconductor Corporation |
3,709 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 6A | -55°C ~ 150°C | 1 V @ 6 A |
|
RS3D V7GDIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation |
3,398 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 150 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | - | |
|
F1T2G A1GDIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation |
3,178 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
6A40G A0GDIODE GEN PURP 400V 6A R-6 Taiwan Semiconductor Corporation |
3,804 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
|
RS3G V7GDIODE GEN PURP 400V 3A DO214AB Taiwan Semiconductor Corporation |
3,672 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 150 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | - | |
|
|
F1T2GHA1GDIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation |
3,531 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
6A40GHA0GDIODE GEN PURP 400V 6A R-6 Taiwan Semiconductor Corporation |
2,043 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 6A | -55°C ~ 150°C | 1 V @ 6 A |
|
|
RS3K V7GDIODE GEN PURP 800V 3A DO214AB Taiwan Semiconductor Corporation |
3,039 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 500 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | - | |
|
|
F1T3G A1GDIODE GEN PURP 200V 1A TS-1 Taiwan Semiconductor Corporation |
3,344 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
6A60G A0GDIODE GEN PURP 600V 6A R-6 Taiwan Semiconductor Corporation |
2,188 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
|
RS3M V7GDIODE GEN PURP 3A DO214AB Taiwan Semiconductor Corporation |
3,482 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 500 ns | 10 µA @ 1000 V | - | 3A | -55°C ~ 150°C | - | |
|
|
F1T3GHA1GDIODE GEN PURP 200V 1A TS-1 Taiwan Semiconductor Corporation |
2,460 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
6A60GHA0GDIODE GEN PURP 600V 6A R-6 Taiwan Semiconductor Corporation |
3,396 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 6A | -55°C ~ 150°C | 1 V @ 6 A |
|
|
S3A V6GDIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation |
2,389 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | - | |
|
|
F1T4G A1GDIODE GEN PURP 400V 1A TS-1 Taiwan Semiconductor Corporation |
2,398 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
6A80G A0GDIODE GEN PURP 800V 6A R-6 Taiwan Semiconductor Corporation |
2,155 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
|
S3A V7GDIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation |
3,537 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | - | |
|
|
F1T4GHA1GDIODE GEN PURP 400V 1A TS-1 Taiwan Semiconductor Corporation |
3,682 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
6A80GHA0GDIODE GEN PURP 800V 6A R-6 Taiwan Semiconductor Corporation |
2,393 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 6A | -55°C ~ 150°C | 1 V @ 6 A |
|
|
S3B V6GDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
3,246 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | - |
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