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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2A04G A0GDIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation |
3,883 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
|
ES3DV V7GDIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation |
2,408 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 20 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | - | |
|
UF4002 A0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,194 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
2A04GHA0GDIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation |
3,565 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1 V @ 2 A |
|
|
ES3F V7GDIODE GEN PURP 300V 3A DO214AB Taiwan Semiconductor Corporation |
2,511 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | - | |
|
|
UF4002HA0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
2,648 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
|
2A05GHA0GDIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation |
2,353 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1 V @ 2 A |
|
|
ESH3B V7GDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
2,039 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 20 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | - | |
|
|
UF4003 A0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
3,567 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
2A06G A0GDIODE GEN PURP 800V 2A DO204AC Taiwan Semiconductor Corporation |
3,626 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
|
|
ESH3C V7GDIODE GEN PURP 150V 3A DO214AB Taiwan Semiconductor Corporation |
2,260 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 20 ns | 5 µA @ 150 V | 150 V | 3A | -55°C ~ 175°C | - | |
|
|
UF4003HA0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
2,305 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
|
2A06GHA0GDIODE GEN PURP 800V 2A DO204AC Taiwan Semiconductor Corporation |
2,474 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 2A | -55°C ~ 150°C | 1 V @ 2 A |
|
|
ESH3D V7GDIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation |
3,846 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 20 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | - | |
|
|
UF4004 A0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
2,803 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
2A07G A0GDIODE GEN PURP 2A DO204AC Taiwan Semiconductor Corporation |
3,412 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 1000 V | - | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
|
|
HS3A V6GDIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation |
3,017 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | - | |
|
|
UF4004HA0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
2,618 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
|
2A07GHA0GDIODE GEN PURP 2A DO204AC Taiwan Semiconductor Corporation |
3,688 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 1000 V | - | 2A | -55°C ~ 150°C | 1 V @ 2 A |
|
|
HS3B V6GDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
3,588 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | - |
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