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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SK810C V7GDIODE SCHOTTKY 8A 100V DO-214AB Taiwan Semiconductor Corporation |
3,211 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 900 mV @ 8 A | |
|
UF1JHA0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
2,621 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
2A01G A0GDIODE GEN PURP 50V 2A DO204AC Taiwan Semiconductor Corporation |
2,741 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |
|
|
ES3A V6GDIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation |
2,982 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | - | |
|
|
UF1K A0GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
3,802 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
2A01GHA0GDIODE GEN PURP 50V 2A DO204AC Taiwan Semiconductor Corporation |
3,032 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A |
|
|
ES3A V7GDIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation |
3,664 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | - | |
|
|
UF1KHA0GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
2,489 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
2A02G A0GDIODE GEN PURP 100V 2A DO204AC Taiwan Semiconductor Corporation |
3,432 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |
|
|
ES3B V6GDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
2,179 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | - | |
|
|
UF1M A0GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
3,089 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
2A02GHA0GDIODE GEN PURP 100V 2A DO204AC Taiwan Semiconductor Corporation |
3,939 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A |
|
|
ES3B V7GDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
2,325 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | - | |
|
|
UF1MHA0GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
2,576 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
2A03G A0GDIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation |
2,725 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
|
|
ES3C V6GDIODE GEN PURP 150V 3A DO214AB Taiwan Semiconductor Corporation |
3,317 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | - | |
|
|
UF4001 A0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
3,806 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
2A03GHA0GDIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation |
3,545 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1 V @ 2 A |
|
|
ES3C V7GDIODE GEN PURP 150V 3A DO214AB Taiwan Semiconductor Corporation |
2,904 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | - | |
|
|
UF4001HA0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
3,535 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
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