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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MUR305S V7GDIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation |
3,792 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 25 ns | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 175°C | - | |
|
1T3G A1GDIODE GEN PURP 200V 1A TS-1 Taiwan Semiconductor Corporation |
3,851 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
6A05GHA0GDIODE GEN PURP 50V 6A R-6 Taiwan Semiconductor Corporation |
3,030 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 6A | -55°C ~ 150°C | 1.1 V @ 6 A |
|
|
MUR310S V7GDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
2,909 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 25 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | - | |
|
|
1T4G A1GDIODE GEN PURP 400V 1A TS-1 Taiwan Semiconductor Corporation |
3,997 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
6A100G A0GDIODE GEN PURP 6A R-6 Taiwan Semiconductor Corporation |
3,768 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
|
MUR315S V7GDIODE GEN PURP 150V 3A DO214AB Taiwan Semiconductor Corporation |
3,611 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 25 ns | 5 µA @ 150 V | 150 V | 3A | -55°C ~ 175°C | - | |
|
|
1T5G A1GDIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation |
2,701 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
6A100GHA0GDIODE GEN PURP 6A R-6 Taiwan Semiconductor Corporation |
2,825 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 6A | -55°C ~ 150°C | 1 V @ 6 A |
|
|
MUR340S V7GDIODE GEN PURP 400V 3A DO214AB Taiwan Semiconductor Corporation |
3,363 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | - | |
|
|
1T6G A1GDIODE GEN PURP 800V 1A TS-1 Taiwan Semiconductor Corporation |
2,476 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
6A10G A0GDIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation |
2,768 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 6A | -55°C ~ 150°C | 1.1 V @ 6 A | |
|
|
RS3A V6GDIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation |
2,317 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 150 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | - | |
|
|
1T7G A1GDIODE GEN PURP 1A TS-1 Taiwan Semiconductor Corporation |
3,111 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
6A10GHA0GDIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation |
2,246 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 6A | -55°C ~ 150°C | 1.1 V @ 6 A |
|
|
RS3A V7GDIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation |
2,680 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 150 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | - | |
|
|
F1T1G A1GDIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation |
2,703 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
6A20G A0GDIODE GEN PURP 200V 6A R-6 Taiwan Semiconductor Corporation |
3,242 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
|
RS3B V6GDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
3,273 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 150 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | - | |
|
|
F1T1GHA1GDIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation |
3,009 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
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