Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
F1T5G A1G

F1T5G A1G

DIODE GEN PURP 600V 1A TS-1

Taiwan Semiconductor Corporation
3,978 -

RFQ

F1T5G A1G

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.3 V @ 1 A
F1T1G A0G

F1T1G A0G

DIODE GEN PURP 50V 1A TS-1

Taiwan Semiconductor Corporation
3,645 -

RFQ

F1T1G A0G

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1.3 V @ 1 A
S3B V7G

S3B V7G

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation
3,904 -

RFQ

S3B V7G

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 100 V 100 V 3A -55°C ~ 150°C -
F1T5GHA1G

F1T5GHA1G

DIODE GEN PURP 600V 1A TS-1

Taiwan Semiconductor Corporation
2,218 -

RFQ

F1T5GHA1G

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.3 V @ 1 A
F1T1GHA0G

F1T1GHA0G

DIODE GEN PURP 50V 1A TS-1

Taiwan Semiconductor Corporation
3,016 -

RFQ

F1T1GHA0G

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1.3 V @ 1 A
S4A V6G

S4A V6G

DIODE GEN PURP 50V 4A DO214AB

Taiwan Semiconductor Corporation
2,912 -

RFQ

S4A V6G

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 50 V 50 V 4A -55°C ~ 150°C -
F1T6G A1G

F1T6G A1G

DIODE GEN PURP 800V 1A TS-1

Taiwan Semiconductor Corporation
3,386 -

RFQ

F1T6G A1G

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 500 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.3 V @ 1 A
F1T2G A0G

F1T2G A0G

DIODE GEN PURP 100V 1A TS-1

Taiwan Semiconductor Corporation
3,475 -

RFQ

F1T2G A0G

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.3 V @ 1 A
S4B V6G

S4B V6G

DIODE GEN PURP 100V 4A DO214AB

Taiwan Semiconductor Corporation
2,272 -

RFQ

S4B V6G

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 100 µA @ 100 V 100 V 4A -55°C ~ 150°C -
F1T6GHA1G

F1T6GHA1G

DIODE GEN PURP 800V 1A TS-1

Taiwan Semiconductor Corporation
2,541 -

RFQ

F1T6GHA1G

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 500 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.3 V @ 1 A
F1T2GHA0G

F1T2GHA0G

DIODE GEN PURP 100V 1A TS-1

Taiwan Semiconductor Corporation
3,489 -

RFQ

F1T2GHA0G

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.3 V @ 1 A
S5A V6G

S5A V6G

DIODE GEN PURP 50V 5A DO214AB

Taiwan Semiconductor Corporation
3,260 -

RFQ

S5A V6G

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 50 V 50 V 5A -55°C ~ 150°C -
F1T7G A1G

F1T7G A1G

DIODE GEN PURP 1A TS-1

Taiwan Semiconductor Corporation
2,467 -

RFQ

F1T7G A1G

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 500 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.3 V @ 1 A
F1T3G A0G

F1T3G A0G

DIODE GEN PURP 200V 1A TS-1

Taiwan Semiconductor Corporation
3,155 -

RFQ

F1T3G A0G

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.3 V @ 1 A
S5B V6G

S5B V6G

DIODE GEN PURP 100V 5A DO214AB

Taiwan Semiconductor Corporation
2,970 -

RFQ

S5B V6G

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 100 V 100 V 5A -55°C ~ 150°C -
F1T7GHA1G

F1T7GHA1G

DIODE GEN PURP 1A TS-1

Taiwan Semiconductor Corporation
3,787 -

RFQ

F1T7GHA1G

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 500 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.3 V @ 1 A
S2GA M2G

S2GA M2G

DIODE GEN PURP 400V 1.5A DO214AC

Taiwan Semiconductor Corporation
2,531 -

RFQ

S2GA M2G

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 30pF @ 4V, 1MHz 1.5 µs 5 µA @ 400 V 400 V 1.5A -55°C ~ 150°C 1.1 V @ 1.5 A
S2JA M2G

S2JA M2G

DIODE GEN PURP 600V 1.5A DO214AC

Taiwan Semiconductor Corporation
3,507 -

RFQ

S2JA M2G

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 30pF @ 4V, 1MHz 1.5 µs 5 µA @ 600 V 600 V 1.5A -55°C ~ 150°C 1.1 V @ 1.5 A
F1T3GHA0G

F1T3GHA0G

DIODE GEN PURP 200V 1A TS-1

Taiwan Semiconductor Corporation
3,783 -

RFQ

F1T3GHA0G

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.3 V @ 1 A
SK52C V6G

SK52C V6G

DIODE SCHOTTKY 5A 20V DO-214AB

Taiwan Semiconductor Corporation
3,635 -

RFQ

SK52C V6G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 20 V 20 V 5A -55°C ~ 150°C 550 mV @ 5 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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