Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SFT12G A1G

SFT12G A1G

DIODE GEN PURP 100V 1A TS-1

Taiwan Semiconductor Corporation
3,432 -

RFQ

SFT12G A1G

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 950 mV @ 1 A
S2A

S2A

DIODE GEN PURP 50V 2A DO214AA

Taiwan Semiconductor Corporation
3,817 -

RFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 30pF @ 4V, 1MHz 1.5 µs 1 µA @ 50 V 50 V 2A -55°C ~ 150°C 1.15 V @ 2 A
FR152G A0G

FR152G A0G

DIODE GEN PURP 100V 1.5A DO204AC

Taiwan Semiconductor Corporation
2,400 -

RFQ

FR152G A0G

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
SK85C V7G

SK85C V7G

DIODE SCHOTTKY 8A 50V DO-214AB

Taiwan Semiconductor Corporation
2,648 -

RFQ

SK85C V7G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 50 V 50 V 8A -55°C ~ 150°C -
SFT12GHA1G

SFT12GHA1G

DIODE GEN PURP 100V 1A TS-1

Taiwan Semiconductor Corporation
3,329 -

RFQ

SFT12GHA1G

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 950 mV @ 1 A
FR152GHA0G

FR152GHA0G

DIODE GEN PURP 100V 1.5A DO204AC

Taiwan Semiconductor Corporation
3,547 -

RFQ

FR152GHA0G

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
SS315 V7G

SS315 V7G

DIODE SCHOTTKY 3A 150V DO-214AB

Taiwan Semiconductor Corporation
3,065 -

RFQ

SS315 V7G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 100 µA @ 150 V 150 V 3A -55°C ~ 150°C -
SFT13G A1G

SFT13G A1G

DIODE GEN PURP 150V 1A TS-1

Taiwan Semiconductor Corporation
3,902 -

RFQ

SFT13G A1G

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 1A -55°C ~ 150°C 950 mV @ 1 A
FR153G A0G

FR153G A0G

DIODE GEN PURP 200V 1.5A DO204AC

Taiwan Semiconductor Corporation
2,351 -

RFQ

FR153G A0G

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
SS32 V6G

SS32 V6G

DIODE SCHOTTKY 3A 20V DO-214AB

Taiwan Semiconductor Corporation
3,862 -

RFQ

SS32 V6G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 20 V 20 V 3A -55°C ~ 125°C -
SFT13GHA1G

SFT13GHA1G

DIODE GEN PURP 150V 1A TS-1

Taiwan Semiconductor Corporation
2,759 -

RFQ

SFT13GHA1G

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 1A -55°C ~ 150°C 950 mV @ 1 A
FR153GHA0G

FR153GHA0G

DIODE GEN PURP 200V 1.5A DO204AC

Taiwan Semiconductor Corporation
3,254 -

RFQ

FR153GHA0G

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
SS32 V7G

SS32 V7G

DIODE SCHOTTKY 3A 20V DO-214AB

Taiwan Semiconductor Corporation
3,920 -

RFQ

SS32 V7G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 20 V 20 V 3A -55°C ~ 125°C -
SFT14G A1G

SFT14G A1G

DIODE GEN PURP 200V 1A TS-1

Taiwan Semiconductor Corporation
3,789 -

RFQ

SFT14G A1G

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 950 mV @ 1 A
FR154G A0G

FR154G A0G

DIODE GEN PURP 400V 1.5A DO204AC

Taiwan Semiconductor Corporation
3,307 -

RFQ

FR154G A0G

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
SS33 V7G

SS33 V7G

DIODE SCHOTTKY 3A 30V DO-214AB

Taiwan Semiconductor Corporation
2,135 -

RFQ

SS33 V7G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 30 V 30 V 3A -55°C ~ 125°C -
SFT14GHA1G

SFT14GHA1G

DIODE GEN PURP 200V 1A TS-1

Taiwan Semiconductor Corporation
2,240 -

RFQ

SFT14GHA1G

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 950 mV @ 1 A
FR154GHA0G

FR154GHA0G

DIODE GEN PURP 400V 1.5A DO204AC

Taiwan Semiconductor Corporation
3,880 -

RFQ

FR154GHA0G

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
SS35 V6G

SS35 V6G

DIODE SCHOTTKY 3A 50V DO-214AB

Taiwan Semiconductor Corporation
2,572 -

RFQ

SS35 V6G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 50 V 50 V 3A -55°C ~ 150°C -
SFT15G A1G

SFT15G A1G

DIODE GEN PURP 300V 1A TS-1

Taiwan Semiconductor Corporation
3,932 -

RFQ

SFT15G A1G

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 10pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 1A -55°C ~ 150°C 1.3 V @ 1 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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