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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SFT18GHA1GDIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation |
2,343 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
FR203G A0GDIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation |
3,573 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
SRT110 A1GDIODE SCHOTTKY 100V 1A TS-1 Taiwan Semiconductor Corporation |
2,688 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A | |
|
|
FR204G A0GDIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation |
3,053 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
SRT110HA1GDIODE SCHOTTKY 100V 1A TS-1 Taiwan Semiconductor Corporation |
3,833 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A |
|
|
FR205G A0GDIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation |
2,012 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
SRT115 A1GDIODE SCHOTTKY 150V 1A TS-1 Taiwan Semiconductor Corporation |
3,310 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 900 mV @ 1 A | |
|
|
FR206G A0GDIODE GEN PURP 800V 2A DO204AC Taiwan Semiconductor Corporation |
2,495 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
SRT115HA1GDIODE SCHOTTKY 150V 1A TS-1 Taiwan Semiconductor Corporation |
3,416 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 900 mV @ 1 A |
|
RS1M M2GDIODE GEN PURP 1A DO214AC Taiwan Semiconductor Corporation |
2,397 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
SFT16G R0GDIODE GEN PURP 400V 1A TS-1 Taiwan Semiconductor Corporation |
3,727 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
SFT18G R0GDIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation |
2,376 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
SD101CW RHGDIODE SCHOTTKY 40V 15MA SOD123 Taiwan Semiconductor Corporation |
2,593 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2.2pF @ 0V, 1MHz | 1 ns | 200 nA @ 40 V | 40 V | 15mA (DC) | -65°C ~ 125°C | 900 mV @ 15 mA | |
|
|
SD103AW RHGDIODE SCHOTTKY 40V 350MA SOD123 Taiwan Semiconductor Corporation |
3,667 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | - | 5 µA @ 40 V | 40 V | 350mA | 125°C (Max) | 600 mV @ 200 mA | |
|
SF14GHR0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
3,767 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
FR207G A0GDIODE GEN PURP 2A DO204AC Taiwan Semiconductor Corporation |
3,789 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
SRT12 A1GDIODE SCHOTTKY 20V 1A TS-1 Taiwan Semiconductor Corporation |
3,589 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A | |
|
FR301G A0GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
2,267 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
|
SRT12HA1GDIODE SCHOTTKY 20V 1A TS-1 Taiwan Semiconductor Corporation |
2,719 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A |
|
|
FR302G A0GDIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation |
2,201 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A |
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