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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S3KB M4GDIODE GEN PURP 800V 3A DO214AA Taiwan Semiconductor Corporation |
3,308 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
|
S3MB M4GDIODE GEN PURP 3A DO214AA Taiwan Semiconductor Corporation |
2,068 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 1000 V | - | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
SF2L6G R0GDIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation |
2,534 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
ES2DHM4GDIODE GEN PURP 200V 2A DO214AA Taiwan Semiconductor Corporation |
2,543 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
S2BA M2GDIODE GEN PURP 100V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,710 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1.1 V @ 1.5 A | |
|
|
ES2DVHM4GDIODE GEN PURP 200V 2A DO214AA Taiwan Semiconductor Corporation |
3,152 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 20 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A |
|
|
ES2FHM4GDIODE GEN PURP 300V 2A DO214AA Taiwan Semiconductor Corporation |
3,496 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A |
|
SRA850 C0GDIODE SCHOTTKY 50V 8A TO220AC Taiwan Semiconductor Corporation |
2,893 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 700 mV @ 8 A | |
|
SRT19HA1GDIODE SCHOTTKY 90V 1A TS-1 Taiwan Semiconductor Corporation |
2,821 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A |
|
|
SRA850HC0GDIODE SCHOTTKY 50V 8A TO220AC Taiwan Semiconductor Corporation |
2,442 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 700 mV @ 8 A |
|
|
UG06A A1GDIODE GEN PURP 50V 600MA TS-1 Taiwan Semiconductor Corporation |
2,920 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 9pF @ 4V, 1MHz | 15 ns | 5 µA @ 50 V | 50 V | 600mA | -55°C ~ 150°C | 950 mV @ 600 mA | |
|
|
SRA860 C0GDIODE SCHOTTKY 60V 8A TO220AC Taiwan Semiconductor Corporation |
3,005 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 60 V | 60 V | 8A | -55°C ~ 150°C | 700 mV @ 8 A | |
|
|
UG06AHA1GDIODE GEN PURP 50V 600MA TS-1 Taiwan Semiconductor Corporation |
4,000 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 9pF @ 4V, 1MHz | 15 ns | 5 µA @ 50 V | 50 V | 600mA | -55°C ~ 150°C | 950 mV @ 600 mA |
|
|
SRA860HC0GDIODE SCHOTTKY 60V 8A TO220AC Taiwan Semiconductor Corporation |
2,097 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 8A | -55°C ~ 150°C | 700 mV @ 8 A |
|
|
UG06B A1GDIODE GEN PURP 100V 600MA TS-1 Taiwan Semiconductor Corporation |
2,296 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 9pF @ 4V, 1MHz | 15 ns | 5 µA @ 100 V | 100 V | 600mA | -55°C ~ 150°C | 950 mV @ 600 mA | |
|
|
SRA890 C0GDIODE SCHOTTKY 90V 8A TO220AC Taiwan Semiconductor Corporation |
3,024 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 8A | -55°C ~ 150°C | 850 mV @ 8 A | |
|
|
UG06BHA1GDIODE GEN PURP 100V 600MA TS-1 Taiwan Semiconductor Corporation |
3,502 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 9pF @ 4V, 1MHz | 15 ns | 5 µA @ 100 V | 100 V | 600mA | -55°C ~ 150°C | 950 mV @ 600 mA |
|
|
SRA890HC0GDIODE SCHOTTKY 90V 8A TO220AC Taiwan Semiconductor Corporation |
3,298 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 8A | -55°C ~ 150°C | 850 mV @ 8 A |
|
|
UG06C A1GDIODE GEN PURP 150V 600MA TS-1 Taiwan Semiconductor Corporation |
2,896 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 9pF @ 4V, 1MHz | 15 ns | 5 µA @ 150 V | 150 V | 600mA | -55°C ~ 150°C | 950 mV @ 600 mA | |
|
|
ES2GHM4GDIODE GEN PURP 400V 2A DO214AA Taiwan Semiconductor Corporation |
2,792 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A |
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