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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SRT13 A1GDIODE SCHOTTKY 30V 1A TS-1 Taiwan Semiconductor Corporation |
2,817 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A | |
|
FR303G A0GDIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation |
3,126 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
|
SRT13HA1GDIODE SCHOTTKY 30V 1A TS-1 Taiwan Semiconductor Corporation |
2,404 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A |
|
|
FR305G A0GDIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation |
2,791 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
|
SRT14 A1GDIODE SCHOTTKY 40V 1A TS-1 Taiwan Semiconductor Corporation |
3,426 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A | |
|
|
FR306G A0GDIODE GEN PURP 800V 3A DO201AD Taiwan Semiconductor Corporation |
3,945 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
SD103BW RHGDIODE SCHOTTKY 30V 350MA SOD123 Taiwan Semiconductor Corporation |
3,311 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | - | 5 µA @ 30 V | 30 V | 350mA | 125°C (Max) | 600 mV @ 200 mA | |
|
|
SD103CW RHGDIODE SCHOTTKY 20V 350MA SOD123 Taiwan Semiconductor Corporation |
3,530 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | - | 5 µA @ 20 V | 20 V | 350mA | 125°C (Max) | 600 mV @ 200 mA | |
|
S3DB M4GDIODE GEN PURP 200V 3A DO214AA Taiwan Semiconductor Corporation |
3,845 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
|
S3GB M4GDIODE GEN PURP 400V 3A DO214AA Taiwan Semiconductor Corporation |
2,543 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
|
S3JB M4GDIODE GEN PURP 600V 3A DO214AA Taiwan Semiconductor Corporation |
3,587 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
|
SRT14HA1GDIODE SCHOTTKY 40V 1A TS-1 Taiwan Semiconductor Corporation |
3,833 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A |
|
|
FR307G A0GDIODE GEN PURP 3A DO201AD Taiwan Semiconductor Corporation |
2,981 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
|
SRT15 A1GDIODE SCHOTTKY 50V 1A TS-1 Taiwan Semiconductor Corporation |
3,196 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
|
HER151G A0GDIODE GEN PURP 50V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,618 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
|
SRT15HA1GDIODE SCHOTTKY 50V 1A TS-1 Taiwan Semiconductor Corporation |
3,443 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A |
|
|
SRT16 A1GDIODE SCHOTTKY 60V 1A TS-1 Taiwan Semiconductor Corporation |
3,034 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
|
|
SRT16HA1GDIODE SCHOTTKY 60V 1A TS-1 Taiwan Semiconductor Corporation |
2,267 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A |
|
SRA840HC0GDIODE SCHOTTKY 40V 8A TO220AC Taiwan Semiconductor Corporation |
2,126 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A |
|
|
SRT19 A1GDIODE SCHOTTKY 90V 1A TS-1 Taiwan Semiconductor Corporation |
2,094 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A |
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