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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SKL13B M4GDIODE SCHOTTKY 30V 1A DO214AA Taiwan Semiconductor Corporation |
3,765 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 390 mV @ 1 A | |
|
SRAF10100 C0GDIODE SCHOTTKY 100V 10A ITO220AC Taiwan Semiconductor Corporation |
3,707 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 100 V | 100 V | 10A | -55°C ~ 150°C | 850 mV @ 10 A | |
|
UG06CHA1GDIODE GEN PURP 150V 600MA TS-1 Taiwan Semiconductor Corporation |
3,962 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 9pF @ 4V, 1MHz | 15 ns | 5 µA @ 150 V | 150 V | 600mA | -55°C ~ 150°C | 950 mV @ 600 mA |
|
|
SRAF10100HC0GDIODE SCHOTTKY 100V 10A ITO220AC Taiwan Semiconductor Corporation |
3,026 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 10A | -55°C ~ 150°C | 850 mV @ 10 A |
|
|
UG06D A1GDIODE GEN PURP 200V 600MA TS-1 Taiwan Semiconductor Corporation |
2,964 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 9pF @ 4V, 1MHz | 15 ns | 5 µA @ 200 V | 200 V | 600mA | -55°C ~ 150°C | 950 mV @ 600 mA | |
|
|
SRAF10150 C0GDIODE SCHOTTKY 150V 10A ITO220AC Taiwan Semiconductor Corporation |
2,306 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 950 mV @ 10 A | |
|
|
UG06DHA1GDIODE GEN PURP 200V 600MA TS-1 Taiwan Semiconductor Corporation |
3,535 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 9pF @ 4V, 1MHz | 15 ns | 5 µA @ 200 V | 200 V | 600mA | -55°C ~ 150°C | 950 mV @ 600 mA |
|
|
SRAF10150HC0GDIODE SCHOTTKY 150V 10A ITO220AC Taiwan Semiconductor Corporation |
2,305 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 950 mV @ 10 A |
|
1N5391G A0GDIODE GEN PURP 50V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,596 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1.1 V @ 1.5 A | |
|
|
SRAF1020 C0GDIODE SCHOTTKY 20V 10A ITO220AC Taiwan Semiconductor Corporation |
3,408 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 10A | -55°C ~ 125°C | 550 mV @ 10 A | |
|
|
1N5391GHA0GDIODE GEN PURP 50V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,443 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1.1 V @ 1.5 A |
|
|
ES2LD M4GDIODE GEN PURP 200V 2A DO214AA Taiwan Semiconductor Corporation |
3,946 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 940 mV @ 2 A | |
|
|
ES2LG M4GDIODE GEN PURP 400V 2A DO214AA Taiwan Semiconductor Corporation |
2,606 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
ES2LJ M4GDIODE GEN PURP 600V 2A DO214AA Taiwan Semiconductor Corporation |
3,838 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
|
SRAF1020HC0GDIODE SCHOTTKY 20V 10A ITO220AC Taiwan Semiconductor Corporation |
3,332 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 10A | -55°C ~ 125°C | 550 mV @ 10 A |
|
|
1N5392G A0GDIODE GEN PURP 100V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,451 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1.1 V @ 1.5 A | |
|
|
SRAF1030 C0GDIODE SCHOTTKY 30V 10A ITO220AC Taiwan Semiconductor Corporation |
2,203 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 10A | -55°C ~ 125°C | 550 mV @ 10 A | |
|
|
1N5392GHA0GDIODE GEN PURP 100V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,329 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1.1 V @ 1.5 A |
|
|
SRAF1030HC0GDIODE SCHOTTKY 30V 10A ITO220AC Taiwan Semiconductor Corporation |
2,582 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 10A | -55°C ~ 125°C | 550 mV @ 10 A |
|
|
1N5393G A0GDIODE GEN PURP 200V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,357 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A |
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