Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SRAF1640HC0G

SRAF1640HC0G

DIODE SCHOTTKY 40V 16A ITO220AC

Taiwan Semiconductor Corporation
3,533 -

RFQ

SRAF1640HC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 40 V 40 V 16A -55°C ~ 125°C 550 mV @ 16 A
SFF1605G C0G

SFF1605G C0G

DIODE GEN PURP 300V 16A ITO220AB

Taiwan Semiconductor Corporation
3,974 -

RFQ

SFF1605G C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 16A -55°C ~ 150°C 1.3 V @ 8 A
SRAF1650 C0G

SRAF1650 C0G

DIODE SCHOTTKY 50V 16A ITO220AC

Taiwan Semiconductor Corporation
2,148 -

RFQ

SRAF1650 C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 16A -55°C ~ 150°C 700 mV @ 16 A
SFF1605GHC0G

SFF1605GHC0G

DIODE GEN PURP 300V 16A ITO220AB

Taiwan Semiconductor Corporation
2,730 -

RFQ

SFF1605GHC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 16A -55°C ~ 150°C 1.3 V @ 8 A
SRAF1650HC0G

SRAF1650HC0G

DIODE SCHOTTKY 50V 16A ITO220AC

Taiwan Semiconductor Corporation
2,736 -

RFQ

SRAF1650HC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 16A -55°C ~ 150°C 700 mV @ 16 A
SFF1606GHC0G

SFF1606GHC0G

DIODE GEN PURP 400V 16A ITO220AB

Taiwan Semiconductor Corporation
2,838 -

RFQ

SFF1606GHC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 16A -55°C ~ 150°C 1.3 V @ 8 A
SRAF1660 C0G

SRAF1660 C0G

DIODE SCHOTTKY 60V 16A ITO220AC

Taiwan Semiconductor Corporation
2,023 -

RFQ

SRAF1660 C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 60 V 60 V 16A -55°C ~ 150°C 700 mV @ 16 A
SFF1607G C0G

SFF1607G C0G

DIODE GEN PURP 500V 16A ITO220AB

Taiwan Semiconductor Corporation
3,021 -

RFQ

SFF1607G C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 16A -55°C ~ 150°C 1.7 V @ 8 A
SRAF1660HC0G

SRAF1660HC0G

DIODE SCHOTTKY 60V 16A ITO220AC

Taiwan Semiconductor Corporation
3,907 -

RFQ

SRAF1660HC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 60 V 60 V 16A -55°C ~ 150°C 700 mV @ 16 A
SFF1607GHC0G

SFF1607GHC0G

DIODE GEN PURP 500V 16A ITO220AB

Taiwan Semiconductor Corporation
3,014 -

RFQ

SFF1607GHC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 16A -55°C ~ 150°C 1.7 V @ 8 A
HS3G-K M6G

HS3G-K M6G

50NS, 3A, 400V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation
3,426 -

RFQ

HS3G-K M6G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 37pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 3A (DC) -55°C ~ 150°C 1.3 V @ 3 A
F1T4G R0G

F1T4G R0G

DIODE GEN PURP 400V 1A TS-1

Taiwan Semiconductor Corporation
3,708 -

RFQ

F1T4G R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
HS3D-K M6G

HS3D-K M6G

50NS, 3A, 200V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation
2,302 -

RFQ

HS3D-K M6G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 53pF @ 4V, 1MHz 50 ns 10 µA @ 200 V 200 V 3A (DC) -55°C ~ 150°C 1 V @ 3 A
F1T5G R0G

F1T5G R0G

DIODE GEN PURP 600V 1A TS-1

Taiwan Semiconductor Corporation
2,075 -

RFQ

F1T5G R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.3 V @ 1 A
SRT110 R0G

SRT110 R0G

DIODE SCHOTTKY 100V 1A TS-1

Taiwan Semiconductor Corporation
3,575 -

RFQ

SRT110 R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 1A -55°C ~ 150°C 800 mV @ 1 A
1N5817 R0G

1N5817 R0G

DIODE SCHOTTKY 20V 1A DO204AL

Taiwan Semiconductor Corporation
2,029 -

RFQ

1N5817 R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 55pF @ 4V, 1MHz - 1 mA @ 20 V 20 V 1A -55°C ~ 125°C 450 mV @ 1 A
SRAF1690 C0G

SRAF1690 C0G

DIODE SCHOTTKY 90V 16A ITO220AC

Taiwan Semiconductor Corporation
2,080 -

RFQ

SRAF1690 C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 16A -55°C ~ 150°C 920 mV @ 16 A
SFF1608GHC0G

SFF1608GHC0G

DIODE GEN PURP 600V 16A ITO220AB

Taiwan Semiconductor Corporation
3,174 -

RFQ

SFF1608GHC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 600 V 600 V 16A -55°C ~ 150°C 1.7 V @ 8 A
SRAF1690HC0G

SRAF1690HC0G

DIODE SCHOTTKY 90V 16A ITO220AC

Taiwan Semiconductor Corporation
2,219 -

RFQ

SRAF1690HC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 16A -55°C ~ 150°C 920 mV @ 16 A
SFF2001G C0G

SFF2001G C0G

DIODE GEN PURP 50V 20A ITO220AB

Taiwan Semiconductor Corporation
2,902 -

RFQ

SFF2001G C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 90pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 20A -55°C ~ 150°C 975 mV @ 10 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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