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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SFF503GHC0GDIODE GEN PURP 150V 5A ITO220AB Taiwan Semiconductor Corporation |
2,027 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 5A | -55°C ~ 150°C | 980 mV @ 2.5 A |
|
SRAF8100 C0GDIODE SCHOTTKY 100V 8A ITO220AC Taiwan Semiconductor Corporation |
3,738 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 100 V | 100 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A | |
|
|
SFF504GHC0GDIODE GEN PURP 200V 5A ITO220AB Taiwan Semiconductor Corporation |
2,739 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 5A | -55°C ~ 150°C | 980 mV @ 2.5 A |
|
|
SRAF8100HC0GDIODE SCHOTTKY 100V 8A ITO220AC Taiwan Semiconductor Corporation |
3,826 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 100 V | 100 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A |
|
|
SFF505GHC0GDIODE GEN PURP 300V 5A ITO220AB Taiwan Semiconductor Corporation |
2,568 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 5A | -55°C ~ 150°C | 1.3 V @ 2.5 A |
|
|
SRAF8150 C0GDIODE SCHOTTKY 150V 8A ITO220AC Taiwan Semiconductor Corporation |
3,384 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 150 V | 150 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A | |
|
|
SFF506G C0GDIODE GEN PURP 400V 5A ITO220AB Taiwan Semiconductor Corporation |
3,069 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 5A | -55°C ~ 150°C | 1.3 V @ 2.5 A | |
|
|
SRAF8150HC0GDIODE SCHOTTKY 150V 8A ITO220AC Taiwan Semiconductor Corporation |
2,720 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 150 V | 150 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A |
|
|
SFF506GHC0GDIODE GEN PURP 400V 5A ITO220AB Taiwan Semiconductor Corporation |
3,009 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 5A | -55°C ~ 150°C | 1.3 V @ 2.5 A |
|
|
SRAF820 C0GDIODE SCHOTTKY 20V 8A ITO220AC Taiwan Semiconductor Corporation |
2,438 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 20 V | 20 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A | |
|
|
SFF507G C0GDIODE GEN PURP 500V 5A ITO220AB Taiwan Semiconductor Corporation |
3,723 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 5A | -55°C ~ 150°C | 1.7 V @ 2.5 A | |
|
S1KLS RVGDIODE GEN PURP 800V 1.2A SOD123 Taiwan Semiconductor Corporation |
2,912 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 5 µA @ 800 V | 800 V | 1.2A | -55°C ~ 150°C | 1.3 V @ 1.2 A | |
|
|
SRAF820HC0GDIODE SCHOTTKY 20V 8A ITO220AC Taiwan Semiconductor Corporation |
3,679 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 20 V | 20 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A |
|
|
SFF507GHC0GDIODE GEN PURP 500V 5A ITO220AB Taiwan Semiconductor Corporation |
3,721 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 5A | -55°C ~ 150°C | 1.7 V @ 2.5 A |
|
|
SRAF830 C0GDIODE SCHOTTKY 30V 8A ITO220AC Taiwan Semiconductor Corporation |
2,642 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 30 V | 30 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A | |
|
|
SFF508G C0GDIODE GEN PURP 600V 5A ITO220AB Taiwan Semiconductor Corporation |
3,218 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.7 V @ 2.5 A | |
|
|
SRAF830HC0GDIODE SCHOTTKY 30V 8A ITO220AC Taiwan Semiconductor Corporation |
3,241 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 30 V | 30 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A |
|
|
SFF508GHC0GDIODE GEN PURP 600V 5A ITO220AB Taiwan Semiconductor Corporation |
3,122 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.7 V @ 2.5 A |
|
|
SRAF840 C0GDIODE SCHOTTKY 40V 8A ITO220AC Taiwan Semiconductor Corporation |
3,593 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 40 V | 40 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A | |
|
SR1020 C0GDIODE SCHOTTKY 20V 10A TO220AB Taiwan Semiconductor Corporation |
2,617 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 10A | -55°C ~ 125°C | 550 mV @ 5 A |
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