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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SR1090HC0GDIODE SCHOTTKY 90V 10A TO220AB Taiwan Semiconductor Corporation |
2,952 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 90 V | 90 V | 10A | -55°C ~ 150°C | 850 mV @ 5 A |
|
FR157GHR0GDIODE GEN PURP 1.5A DO204AC Taiwan Semiconductor Corporation |
3,351 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A |
|
ES2JHM4GDIODE GEN PURP 600V 2A DO214AA Taiwan Semiconductor Corporation |
2,071 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A |
|
UG12JHC0GDIODE GEN PURP 600V 12A TO220AC Taiwan Semiconductor Corporation |
3,650 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 ns | 5 µA @ 600 V | 600 V | 12A | -55°C ~ 150°C | 2 V @ 12 A |
|
SR115HR0GDIODE SCHOTTKY 150V 1A DO204AL Taiwan Semiconductor Corporation |
2,389 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
1N5408GDIODE GEN PURP 3A 1000V DO-201AD Taiwan Semiconductor Corporation |
2,640 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 1000 V | 1000 V | 3A (DC) | -55°C ~ 150°C | 1 V @ 3 A | ||
|
|
S2D M4GDIODE GEN PURP 200V 2A DO214AA Taiwan Semiconductor Corporation |
2,404 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A | |
|
|
SRA10100 C0GDIODE SCHOTTKY 100V 10A TO220AC Taiwan Semiconductor Corporation |
3,686 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 100 V | 100 V | 10A | -55°C ~ 150°C | 850 mV @ 10 A | |
|
|
UG5J C0GDIODE GEN PURP 600V 5A TO220AC Taiwan Semiconductor Corporation |
3,808 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 20 ns | 30 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 3 V @ 5 A | |
|
|
SRA10100HC0GDIODE SCHOTTKY 100V 10A TO220AC Taiwan Semiconductor Corporation |
3,766 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 10A | -55°C ~ 150°C | 850 mV @ 10 A |
|
|
UG5JHC0GDIODE GEN PURP 600V 5A TO220AC Taiwan Semiconductor Corporation |
3,110 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 ns | 30 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 3 V @ 5 A |
|
|
SRA10150 C0GDIODE SCHOTTKY 150V 10A TO220AC Taiwan Semiconductor Corporation |
2,158 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 950 mV @ 10 A | |
|
|
UG8JHC0GDIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation |
2,089 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 25 ns | 30 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 2.9 V @ 8 A |
|
|
SRA10150HC0GDIODE SCHOTTKY 150V 10A TO220AC Taiwan Semiconductor Corporation |
3,642 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 950 mV @ 10 A |
|
1N5820HR0GDIODE SCHOTTKY 20V 3A DO201AD Taiwan Semiconductor Corporation |
2,710 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 200pF @ 4V, 1MHz | - | 500 µA @ 20 V | 20 V | 3A | -55°C ~ 125°C | 475 mV @ 3 A |
|
|
S2G M4GDIODE GEN PURP 400V 2A DO214AA Taiwan Semiconductor Corporation |
3,280 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A | |
|
|
1N5821HR0GDIODE SCHOTTKY 30V 3A DO201AD Taiwan Semiconductor Corporation |
3,394 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 200pF @ 4V, 1MHz | - | 500 µA @ 30 V | 30 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A |
|
|
S2J M4GDIODE GEN PURP 600V 2A DO214AA Taiwan Semiconductor Corporation |
3,626 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A | |
|
|
UGA15120 C0GDIODE GEN PURP 15A TO220AC Taiwan Semiconductor Corporation |
2,762 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 65 ns | 5 µA @ 1200 V | - | 15A | -55°C ~ 175°C | 2.9 V @ 15 A | |
|
|
1N5822HR0GDIODE SCHOTTKY 40V 3A DO201AD Taiwan Semiconductor Corporation |
2,747 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 200pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | 525 mV @ 3 A |
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