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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UGF12JHC0GDIODE GEN PURP 600V 12A ITO220AC Taiwan Semiconductor Corporation |
3,678 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 20 ns | 5 µA @ 600 V | 600 V | 12A | -55°C ~ 150°C | 2 V @ 12 A |
|
SRA1060 C0GDIODE SCHOTTKY 60V 10A TO220AC Taiwan Semiconductor Corporation |
3,178 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 60 V | 60 V | 10A | -55°C ~ 150°C | 700 mV @ 10 A | |
|
|
UGF5J C0GDIODE GEN PURP 600V 5A ITO220AC Taiwan Semiconductor Corporation |
3,544 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 25 ns | 30 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 3 V @ 5 A | |
|
ESH2BA M2GDIODE GEN PURP 100V 1A DO214AC Taiwan Semiconductor Corporation |
2,299 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 200 V | 100 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A | |
|
|
ESH2CA M2GDIODE GEN PURP 150V 1A DO214AC Taiwan Semiconductor Corporation |
2,403 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 200 V | 150 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A | |
|
|
SRA1060HC0GDIODE SCHOTTKY 60V 10A TO220AC Taiwan Semiconductor Corporation |
2,664 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 10A | -55°C ~ 150°C | 700 mV @ 10 A |
|
|
ESH2DA M2GDIODE GEN PURP 200V 1A DO214AC Taiwan Semiconductor Corporation |
2,312 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A | |
|
|
UGF5JHC0GDIODE GEN PURP 600V 5A ITO220AC Taiwan Semiconductor Corporation |
2,339 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 30 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 3 V @ 5 A |
|
S3ABHDIODE GEN PURP 50V 3A DO214AA Taiwan Semiconductor Corporation |
2,326 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 50 V | 50 V | 3A (DC) | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
|
US1DHM2GDIODE GEN PURP 200V 1A DO214AC Taiwan Semiconductor Corporation |
2,693 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
|
SRA1090 C0GDIODE SCHOTTKY 90V 10A TO220AC Taiwan Semiconductor Corporation |
2,779 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 10A | -55°C ~ 150°C | 850 mV @ 10 A | |
|
|
US1GHM2GDIODE GEN PURP 400V 1A DO214AC Taiwan Semiconductor Corporation |
3,199 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
|
US1JHM2GDIODE GEN PURP 600V 1A DO214AC Taiwan Semiconductor Corporation |
2,027 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
UGF8JD C0GDIODE GEN PURP 600V 8A ITO220AC Taiwan Semiconductor Corporation |
2,066 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 30 ns | 500 nA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 2.3 V @ 8 A | |
|
|
SRA1090HC0GDIODE SCHOTTKY 90V 10A TO220AC Taiwan Semiconductor Corporation |
3,596 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 90 V | 90 V | 10A | -55°C ~ 150°C | 850 mV @ 10 A |
|
|
UGF8JDHC0GDIODE GEN PURP 600V 8A ITO220AC Taiwan Semiconductor Corporation |
2,445 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 500 nA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 2.3 V @ 8 A |
|
|
SRA16100 C0GDIODE SCHOTTKY 100V 16A TO220AC Taiwan Semiconductor Corporation |
2,914 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 100 V | 100 V | 16A | -55°C ~ 150°C | 920 mV @ 16 A | |
|
|
UGF8JHC0GDIODE GEN PURP 600V 8A ITO220AC Taiwan Semiconductor Corporation |
3,727 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 25 ns | 30 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 2.9 V @ 8 A |
|
|
SRA16100HC0GDIODE SCHOTTKY 100V 16A TO220AC Taiwan Semiconductor Corporation |
2,527 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 16A | -55°C ~ 150°C | 920 mV @ 16 A |
|
1N4001G B0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
3,980 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
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