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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SRA1660HC0GDIODE SCHOTTKY 60V 16A TO220AC Taiwan Semiconductor Corporation |
3,237 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 16A | -55°C ~ 150°C | 700 mV @ 16 A |
|
1N4006G B0GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
2,626 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
SRA1690 C0GDIODE SCHOTTKY 90V 16A TO220AC Taiwan Semiconductor Corporation |
2,012 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 16A | -55°C ~ 150°C | 920 mV @ 16 A | |
|
|
1N4006GHB0GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
3,189 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
|
SRA1690HC0GDIODE SCHOTTKY 90V 16A TO220AC Taiwan Semiconductor Corporation |
3,237 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 90 V | 90 V | 16A | -55°C ~ 150°C | 920 mV @ 16 A |
|
|
SRA20100 C0GDIODE SCHOTTKY 100V 20A TO220AC Taiwan Semiconductor Corporation |
3,589 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 100 V | 100 V | 20A | -55°C ~ 150°C | 920 mV @ 20 A | |
|
|
SRA20100HC0GDIODE SCHOTTKY 100V 20A TO220AC Taiwan Semiconductor Corporation |
3,607 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 100 V | 100 V | 20A | -55°C ~ 150°C | 920 mV @ 20 A |
|
|
SRA20150 C0GDIODE SCHOTTKY 150V 20A TO220AC Taiwan Semiconductor Corporation |
3,840 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.02 V @ 20 A | |
|
|
SRA20150HC0GDIODE SCHOTTKY 150V 20A TO220AC Taiwan Semiconductor Corporation |
3,384 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.02 V @ 20 A |
|
|
SRA2020 C0GDIODE SCHOTTKY 20V 20A TO220AC Taiwan Semiconductor Corporation |
3,922 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 20A | -55°C ~ 125°C | 550 mV @ 20 A | |
|
SS310 V6GDIODE SCHOTTKY 3A 100V DO-214AB Taiwan Semiconductor Corporation |
2,918 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | - | |
|
RSFBLHRVGDIODE GEN PURP 100V 500MA SUBSMA Taiwan Semiconductor Corporation |
3,246 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA |
|
|
SRA2020HC0GDIODE SCHOTTKY 20V 20A TO220AC Taiwan Semiconductor Corporation |
3,507 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 20A | -55°C ~ 125°C | 550 mV @ 20 A |
|
|
SRA2030 C0GDIODE SCHOTTKY 30V 20A TO220AC Taiwan Semiconductor Corporation |
3,777 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 20A | -55°C ~ 125°C | 550 mV @ 20 A | |
|
|
SRA2030HC0GDIODE SCHOTTKY 30V 20A TO220AC Taiwan Semiconductor Corporation |
3,084 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 20A | -55°C ~ 125°C | 550 mV @ 20 A |
|
|
SRA2040 C0GDIODE SCHOTTKY 40V 20A TO220AC Taiwan Semiconductor Corporation |
2,839 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 40 V | 40 V | 20A | -55°C ~ 125°C | 550 mV @ 20 A | |
|
|
SRA2040HC0GDIODE SCHOTTKY 40V 20A TO220AC Taiwan Semiconductor Corporation |
2,022 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 40 V | 40 V | 20A | -55°C ~ 125°C | 550 mV @ 20 A |
|
|
SRA2050 C0GDIODE SCHOTTKY 50V 20A TO220AC Taiwan Semiconductor Corporation |
3,354 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 20A | -55°C ~ 150°C | 700 mV @ 20 A | |
|
|
RSFJLHRVGDIODE GEN PURP 600V 500MA SUBSMA Taiwan Semiconductor Corporation |
3,359 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA |
|
|
HS1GL R3GDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
2,938 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
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