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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SRA1620 C0GDIODE SCHOTTKY 20V 16A TO220AC Taiwan Semiconductor Corporation |
3,486 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 16A | -55°C ~ 125°C | 550 mV @ 16 A | |
|
1N4001GHB0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
2,678 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
|
SRA1620HC0GDIODE SCHOTTKY 20V 16A TO220AC Taiwan Semiconductor Corporation |
3,062 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 16A | -55°C ~ 125°C | 550 mV @ 16 A |
|
|
1N4002G B0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
2,014 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
SRA1630 C0GDIODE SCHOTTKY 30V 16A TO220AC Taiwan Semiconductor Corporation |
3,529 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 16A | -55°C ~ 125°C | 550 mV @ 16 A | |
|
|
1N4002GHB0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,773 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
|
SRA1630HC0GDIODE SCHOTTKY 30V 16A TO220AC Taiwan Semiconductor Corporation |
3,376 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 16A | -55°C ~ 125°C | 550 mV @ 16 A |
|
|
1N4003G B0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
2,717 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
SRA1640 C0GDIODE SCHOTTKY 40V 16A TO220AC Taiwan Semiconductor Corporation |
3,067 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 40 V | 40 V | 16A | -55°C ~ 125°C | 550 mV @ 16 A | |
|
|
1N4003GHB0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
2,871 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
1N5404GHR0GDIODE GEN PURP 400V 3A DO201AD Taiwan Semiconductor Corporation |
3,098 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1 V @ 3 A |
|
SF28GHR0GDIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation |
2,385 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A |
|
|
SRA1640HC0GDIODE SCHOTTKY 40V 16A TO220AC Taiwan Semiconductor Corporation |
2,227 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 40 V | 40 V | 16A | -55°C ~ 125°C | 550 mV @ 16 A |
|
|
1N4004G B0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
2,857 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
SRA1650 C0GDIODE SCHOTTKY 50V 16A TO220AC Taiwan Semiconductor Corporation |
2,074 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 16A | -55°C ~ 150°C | 700 mV @ 16 A | |
|
|
1N4004GHB0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,511 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
|
SRA1650HC0GDIODE SCHOTTKY 50V 16A TO220AC Taiwan Semiconductor Corporation |
3,467 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 16A | -55°C ~ 150°C | 700 mV @ 16 A |
|
|
1N4005G B0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
2,022 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
SRA1660 C0GDIODE SCHOTTKY 60V 16A TO220AC Taiwan Semiconductor Corporation |
3,935 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 60 V | 60 V | 16A | -55°C ~ 150°C | 700 mV @ 16 A | |
|
|
1N4005GHB0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
3,279 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
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