Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SRAF530 C0G

SRAF530 C0G

DIODE SCHOTTKY 30V 5A ITO220AC

Taiwan Semiconductor Corporation
2,788 -

RFQ

SRAF530 C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 30 V 30 V 5A -55°C ~ 125°C 550 mV @ 5 A
SFF2005GHC0G

SFF2005GHC0G

DIODE GEN PURP 300V 20A ITO220AB

Taiwan Semiconductor Corporation
2,775 -

RFQ

SFF2005GHC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 90pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 20A -55°C ~ 150°C 1.3 V @ 10 A
SRAF530HC0G

SRAF530HC0G

DIODE SCHOTTKY 30V 5A ITO220AC

Taiwan Semiconductor Corporation
2,874 -

RFQ

SRAF530HC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 30 V 30 V 5A -55°C ~ 125°C 550 mV @ 5 A
SFF2007G C0G

SFF2007G C0G

DIODE GEN PURP 500V 20A ITO220AB

Taiwan Semiconductor Corporation
3,359 -

RFQ

SFF2007G C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 90pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 20A -55°C ~ 150°C 1.7 V @ 10 A
SRAF540 C0G

SRAF540 C0G

DIODE SCHOTTKY 40V 5A ITO220AC

Taiwan Semiconductor Corporation
2,224 -

RFQ

SRAF540 C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 40 V 40 V 5A -55°C ~ 125°C 550 mV @ 5 A
SFF2007GHC0G

SFF2007GHC0G

DIODE GEN PURP 500V 20A ITO220AB

Taiwan Semiconductor Corporation
2,352 -

RFQ

SFF2007GHC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 90pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 20A -55°C ~ 150°C 1.7 V @ 10 A
SRAF540HC0G

SRAF540HC0G

DIODE SCHOTTKY 40V 5A ITO220AC

Taiwan Semiconductor Corporation
2,527 -

RFQ

SRAF540HC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 40 V 40 V 5A -55°C ~ 125°C 550 mV @ 5 A
SFF2008GHC0G

SFF2008GHC0G

DIODE GEN PURP 600V 20A ITO220AB

Taiwan Semiconductor Corporation
2,350 -

RFQ

SFF2008GHC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 90pF @ 4V, 1MHz 35 ns 10 µA @ 600 V 600 V 20A -55°C ~ 150°C 1.7 V @ 10 A
SRAF550 C0G

SRAF550 C0G

DIODE SCHOTTKY 50V 5A ITO220AC

Taiwan Semiconductor Corporation
2,400 -

RFQ

SRAF550 C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 50 V 50 V 5A -55°C ~ 150°C 700 mV @ 5 A
SFF501G C0G

SFF501G C0G

DIODE GEN PURP 50V 5A ITO220AB

Taiwan Semiconductor Corporation
2,417 -

RFQ

SFF501G C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 5A -55°C ~ 150°C 980 mV @ 2.5 A
SRAF550HC0G

SRAF550HC0G

DIODE SCHOTTKY 50V 5A ITO220AC

Taiwan Semiconductor Corporation
2,867 -

RFQ

SRAF550HC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 50 V 50 V 5A -55°C ~ 150°C 700 mV @ 5 A
SFF501GHC0G

SFF501GHC0G

DIODE GEN PURP 50V 5A ITO220AB

Taiwan Semiconductor Corporation
2,853 -

RFQ

SFF501GHC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 5A -55°C ~ 150°C 980 mV @ 2.5 A
SRAF560 C0G

SRAF560 C0G

DIODE SCHOTTKY 60V 5A ITO220AC

Taiwan Semiconductor Corporation
3,329 -

RFQ

SRAF560 C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 60 V 60 V 5A -55°C ~ 150°C 700 mV @ 5 A
SFF502G C0G

SFF502G C0G

DIODE GEN PURP 100V 5A ITO220AB

Taiwan Semiconductor Corporation
3,400 -

RFQ

SFF502G C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 5A -55°C ~ 150°C 980 mV @ 2.5 A
SRAF560HC0G

SRAF560HC0G

DIODE SCHOTTKY 60V 5A ITO220AC

Taiwan Semiconductor Corporation
2,290 -

RFQ

SRAF560HC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 60 V 60 V 5A -55°C ~ 150°C 700 mV @ 5 A
SFF502GHC0G

SFF502GHC0G

DIODE GEN PURP 100V 5A ITO220AB

Taiwan Semiconductor Corporation
2,662 -

RFQ

SFF502GHC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 5A -55°C ~ 150°C 980 mV @ 2.5 A
SRAF590 C0G

SRAF590 C0G

DIODE SCHOTTKY 90V 5A ITO220AC

Taiwan Semiconductor Corporation
2,950 -

RFQ

SRAF590 C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 100 µA @ 90 V 90 V 5A -55°C ~ 150°C 850 mV @ 5 A
SFF503G C0G

SFF503G C0G

DIODE GEN PURP 150V 5A ITO220AB

Taiwan Semiconductor Corporation
2,664 -

RFQ

SFF503G C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 5A -55°C ~ 150°C 980 mV @ 2.5 A
BYG23M M2G

BYG23M M2G

DIODE GEN PURP 1.5A DO214AC

Taiwan Semiconductor Corporation
2,420 -

RFQ

BYG23M M2G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz 65 ns 1 µA @ 1000 V - 1.5A -55°C ~ 150°C 1.7 V @ 1.5 A
SRAF590HC0G

SRAF590HC0G

DIODE SCHOTTKY 90V 5A ITO220AC

Taiwan Semiconductor Corporation
3,351 -

RFQ

SRAF590HC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 100 µA @ 90 V 90 V 5A -55°C ~ 150°C 850 mV @ 5 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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