Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRLS8409-7P

AUIRLS8409-7P

AUIRLS8409 - 20V-40V N-CHANNEL A

Infineon Technologies
2,279 -

RFQ

AUIRLS8409-7P

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 4.5V, 10V 0.75mOhm @ 100A, 10V 2.4V @ 250µA 266 nC @ 4.5 V ±16V 16488 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB073N15N5ATMA1

IPB073N15N5ATMA1

TRENCH >=100V

Infineon Technologies
2,860 -

RFQ

IPB073N15N5ATMA1

Ficha técnica

Bulk OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 150 V 114A (Tc) 8V, 10V 7.3mOhm @ 57A, 10V 4.6V @ 160µA 61 nC @ 10 V ±20V 4700 pF @ 75 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCH110N65F-F155

FCH110N65F-F155

MOSFET N-CH 650V 35A TO247

Fairchild Semiconductor
3,463 -

RFQ

FCH110N65F-F155

Ficha técnica

Bulk FRFET®, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 110mOhm @ 17.5A, 10V 5V @ 3.5mA 145 nC @ 10 V ±20V 4895 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRLS3036-7P

AUIRLS3036-7P

MOSFET N-CH 60V 240A D2PAK

International Rectifier
2,734 -

RFQ

AUIRLS3036-7P

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 4.5V, 10V 1.9mOhm @ 180A, 10V 2.5V @ 250µA 160 nC @ 4.5 V ±16V 11270 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDB0300N1007L

FDB0300N1007L

MOSFET N-CH 100V 200A TO263-7

Fairchild Semiconductor
3,280 -

RFQ

FDB0300N1007L

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Tc) 6V, 10V 3mOhm @ 26A, 10V 4V @ 250µA 113 nC @ 10 V ±20V 8295 pF @ 50 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RJL5013DPP-E0#T2

RJL5013DPP-E0#T2

RJL5013DPP - N CHANNEL MOSFET

Renesas
2,198 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 14A (Ta) 10V 510mOhm @ 7A, 10V 4V @ 1mA 37.6 nC @ 10 V ±30V 1400 pF @ 25 V - 30W (Tc) 150°C Through Hole
FDA50N50

FDA50N50

POWER FIELD-EFFECT TRANSISTOR, 4

onsemi
3,152 -

RFQ

FDA50N50

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 48A (Tc) 10V 105mOhm @ 24A, 10V 5V @ 250µA 137 nC @ 10 V ±20V 6460 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMT800152DC

FDMT800152DC

MOSFET N-CH 150V 13A/72A 8DLCOOL

Fairchild Semiconductor
3,167 -

RFQ

FDMT800152DC

Ficha técnica

Bulk Dual Cool™, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 13A (Ta), 72A (Tc) 6V, 10V 9mOhm @ 13A, 10V 4V @ 250µA 83 nC @ 10 V ±20V 5875 pF @ 75 V - 3.2W (Ta), 113W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCH077N65F-F155

FCH077N65F-F155

MOSFET N-CH 650V 54A TO247

Fairchild Semiconductor
2,376 -

RFQ

FCH077N65F-F155

Ficha técnica

Bulk FRFET®, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 54A (Tc) 10V 77mOhm @ 27A, 10V 5V @ 5.4mA 164 nC @ 10 V ±20V 7109 pF @ 100 V - 481W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSC0802LSATMA1

BSC0802LSATMA1

MOSFET N-CH 100V 20A/100A TDSON

Infineon Technologies
2,381 -

RFQ

BSC0802LSATMA1

Ficha técnica

Cut Tape (CT) OptiMOS™ 5 Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 20A (Ta), 100A (Tc) 4.5V, 10V 3.4mOhm @ 50A, 10V 2.3V @ 115µA 46 nC @ 4.5 V ±20V 6500 pF @ 50 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDA8440

FDA8440

MOSFET N-CH 40V 30A/100A TO3PN

Fairchild Semiconductor
2,775 -

RFQ

FDA8440

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 30A (Ta), 100A (Tc) 4.5V, 10V 2.1mOhm @ 80A, 10V 3V @ 250µA 450 nC @ 10 V ±20V 24740 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
DI080N06PQ-AQ

DI080N06PQ-AQ

MOSFET, 65V, 80A, N, 80W

Diotec Semiconductor
2,734 -

RFQ

DI080N06PQ-AQ

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 65 V 80A (Tc) 4.5V, 10V 4mOhm @ 30A, 10V 3V @ 250µA 56 nC @ 10 V ±20V 4128 pF @ 30 V - 80W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DIT085N10

DIT085N10

MOSFET, 100V, 85A, N, 61.9W

Diotec Semiconductor
3,343 -

RFQ

DIT085N10

Ficha técnica

Tube,Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 85A (Tc) 4.5V, 10V 4.8mOhm @ 50A, 10V 2.4V @ 250µA 75 nC @ 10 V ±20V 3742 pF @ 50 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
AS3D020065A

AS3D020065A

650V,20A SILICON CARBIDE SCHOTTK

ANBON SEMICONDUCTOR (INT'L) LIMITED
2,512 -

RFQ

AS3D020065A

Ficha técnica

Tube * Active - - - - - - - - - - - - - -
P3M06300K3

P3M06300K3

SICFET N-CH 650V 9A TO-247-3

PN Junction Semiconductor
2,095 -

RFQ

P3M06300K3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 9A 15V 500mOhm @ 4.5A, 15V 2.2V @ 5mA (Typ) 904 nC @ 15 V +20V, -8V 338 pF @ 400 V - 38W -55°C ~ 175°C (TJ) Through Hole
P1H06300D8

P1H06300D8

GANFET N-CH 650V 10A DFN 8X8

PN Junction Semiconductor
2,534 -

RFQ

P1H06300D8

Ficha técnica

Tape & Reel (TR) - Active N-Channel GaNFET (Gallium Nitride) 650 V 10A 6V 1.3V @ 1mA - - +10V, -20V - - 55.5W -55°C ~ 150°C (TJ) Surface Mount
P3M173K0F3

P3M173K0F3

SICFET N-CH 1700V 1.97A TO-220F-

PN Junction Semiconductor
3,131 -

RFQ

P3M173K0F3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1700 V 1.97A 15V 3.6Ohm @ 0.25A, 15V 2.2V @ 1.5mA (Typ) - +19V, -8V - - 19W -55°C ~ 175°C (TJ) Through Hole
X3M0120065L

X3M0120065L

650V MOSFET

Wolfspeed, Inc.
2,055 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
P3M171K0F3

P3M171K0F3

SICFET N-CH 1700V 5.5A TO-220F-3

PN Junction Semiconductor
2,880 -

RFQ

P3M171K0F3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1700 V 5.5A 15V 1.4Ohm @ 2A, 15V 2.2V @ 2mA (Typ) - +19V, -8V - - 51W -55°C ~ 175°C (TJ) Through Hole
IPT65R105G7XTMA1

IPT65R105G7XTMA1

MOSFET N-CH 650V 24A 8HSOF

Infineon Technologies
2,911 -

RFQ

IPT65R105G7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Obsolete N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 105mOhm @ 8.9A, 10V 4V @ 440µA 35 nC @ 10 V ±20V 1670 pF @ 400 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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