Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AS3D020120C

AS3D020120C

1200V,20A SILICON CARBIDE SCHOTT

ANBON SEMICONDUCTOR (INT'L) LIMITED
2,238 -

RFQ

AS3D020120C

Ficha técnica

Tube * Active - - - - - - - - - - - - - -
DIT195N08

DIT195N08

MOSFET, TO-220AB, 85V, 195A, N

Diotec Semiconductor
2,549 -

RFQ

DIT195N08

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 85 V 195A (Tc) 10V 4.95mOhm @ 40A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 16880 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ)
AS3D030065C

AS3D030065C

650V,30A SILICON CARBIDE SCHOTTK

ANBON SEMICONDUCTOR (INT'L) LIMITED
2,031 -

RFQ

AS3D030065C

Ficha técnica

Tube * Active - - - - - - - - - - - - - -
AUIRF7739L2TR

AUIRF7739L2TR

MOSFET N-CH 40V 46A/270A DIRECT

International Rectifier
2,507 -

RFQ

AUIRF7739L2TR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 270A (Tc) 10V 1mOhm @ 160A, 10V 4V @ 250µA 330 nC @ 10 V ±20V 11880 pF @ 25 V - 3.8W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
P3M12160K3

P3M12160K3

SICFET N-CH 1200V 19A TO-247-3

PN Junction Semiconductor
2,066 -

RFQ

P3M12160K3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1200 V 19A 15V 192mOhm @ 10A, 15V 2.4V @ 2.5mA (Typ) - +21V, -8V - - 110W -55°C ~ 175°C (TJ) Through Hole
P3M06120T3

P3M06120T3

SICFET N-CH 650V 29A TO-220-3

PN Junction Semiconductor
2,658 -

RFQ

P3M06120T3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 29A 15V 158mOhm @ 10A, 15V 2.2V @ 5mA (Typ) - +20V, -8V - - 153W -55°C ~ 175°C (TJ) Through Hole
AS3D030120P2

AS3D030120P2

1200V,30A SILICON CARBIDE SCHOTT

ANBON SEMICONDUCTOR (INT'L) LIMITED
2,444 -

RFQ

AS3D030120P2

Ficha técnica

Tube * Active - - - - - - - - - - - - - -
P3M06060G7

P3M06060G7

SICFET N-CH 650V 44A TO-263-7

PN Junction Semiconductor
2,542 -

RFQ

P3M06060G7

Ficha técnica

Tape & Reel (TR) P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 44A 15V 79mOhm @ 20A, 15V 2.2V @ 20mA (Typ) - +20V, -8V - - 159W -55°C ~ 175°C (TJ) Surface Mount
P3M06060L8

P3M06060L8

SICFET N-CH 650V 40A TOLL

PN Junction Semiconductor
2,700 -

RFQ

P3M06060L8

Ficha técnica

Tape & Reel (TR) P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 40A 15V 79mOhm @ 20A, 15V 2.4V @ 5mA (Typ) - +20V, -8V - - 188W -55°C ~ 175°C (TJ) Surface Mount
C3M0075120J-TR

C3M0075120J-TR

SICFET N-CH 1200V 30A TO263-7

Wolfspeed, Inc.
2,165 -

RFQ

C3M0075120J-TR

Ficha técnica

Tape & Reel (TR) C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 15V 90mOhm @ 20A, 15V 4V @ 5mA 51 nC @ 15 V +15V, -4V 1350 pF @ 1000 V - 113.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PC3M0060065L

PC3M0060065L

650V MOSFET

Wolfspeed, Inc.
2,728 -

RFQ

Tape & Reel (TR) - Active - SiCFET (Silicon Carbide) 650 V 38A - - - - - - - 126W 150°C (TJ) -
P3M12080G7

P3M12080G7

SICFET N-CH 1200V 32A TO-263-7

PN Junction Semiconductor
3,143 -

RFQ

P3M12080G7

Ficha técnica

Tape & Reel (TR) P3M Active N-Channel SiCFET (Silicon Carbide) 1200 V 32A 15V 96mOhm @ 20A, 15V 2.2V @ 30mA (Typ) - +19V, -8V - - 136W -55°C ~ 175°C (TJ) Surface Mount
C3M0065100J-TR

C3M0065100J-TR

SICFET N-CH 1000V 35A TO263-7

Wolfspeed, Inc.
3,530 -

RFQ

C3M0065100J-TR

Ficha técnica

Tape & Reel (TR) C3M™ Active N-Channel SiCFET (Silicon Carbide) 1000 V 35A (Tc) 15V 78mOhm @ 20A, 15V 3.5V @ 5mA 35 nC @ 15 V +15V, -4V 660 pF @ 600 V - 113.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AS1M080120P

AS1M080120P

N-CHANNEL SILICON CARBIDE POWER

ANBON SEMICONDUCTOR (INT'L) LIMITED
2,220 -

RFQ

AS1M080120P

Ficha técnica

Tube * Active - - - - - - - - - - - - - -
PC3M0045065L

PC3M0045065L

650V MOSFET

Wolfspeed, Inc.
2,513 -

RFQ

Tape & Reel (TR) - Active - SiCFET (Silicon Carbide) 650 V 51A - - - - - - - 160W 150°C (TJ) -
P3M06025K4

P3M06025K4

SICFET N-CH 650V 97A TO247-4

PN Junction Semiconductor
3,905 -

RFQ

P3M06025K4

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 97A 15V 34mOhm @ 50A, 15V 2.2V @ 50mA (Typ) - +20V, -8V - - 326W -55°C ~ 175°C (TJ) Through Hole
P3M12040G7

P3M12040G7

SICFET N-CH 1200V 69A TO-263-7

PN Junction Semiconductor
3,985 -

RFQ

P3M12040G7

Ficha técnica

Tape & Reel (TR) P3M Active N-Channel SiCFET (Silicon Carbide) 1200 V 69A 15V 53mOhm @ 40A, 15V 2.2V @ 40mA (Typ) - +19V, -8V - - 357W -55°C ~ 175°C (TJ) Surface Mount
P3M12040K4

P3M12040K4

SICFET N-CH 1200V 63A TO-247-3

PN Junction Semiconductor
2,209 -

RFQ

P3M12040K4

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1200 V 63A 15V 48mOhm @ 40A, 15V 2.2V @ 40mA (Typ) - +21V, -8V - - 349W -55°C ~ 175°C (TJ) Through Hole
GPIHV30SB5L

GPIHV30SB5L

GANFET N-CH 1200V 30A TO263-5L

GaNPower
3,091 -

RFQ

GPIHV30SB5L

Ficha técnica

Tube - Active N-Channel GaNFET (Gallium Nitride) 1200 V 30A 6V - 1.4V @ 3.5mA 8.25 nC @ 6 V +7.5V, -12V 236 pF @ 400 V - - -55°C ~ 150°C (TJ) Surface Mount
AS1M040120P

AS1M040120P

N-CHANNEL SILICON CARBIDE POWER

ANBON SEMICONDUCTOR (INT'L) LIMITED
2,829 -

RFQ

AS1M040120P

Ficha técnica

Tube * Active - - - - - - - - - - - - - -
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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