Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STP2N95K5

STP2N95K5

MOSFET N-CH 950V 2A TO220

STMicroelectronics
3,896 -

RFQ

STP2N95K5

Ficha técnica

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 950 V 2A (Tc) 10V 5Ohm @ 1A, 10V 5V @ 100µA 10 nC @ 10 V 30V 105 pF @ 100 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW28N60M2

STW28N60M2

MOSFET N-CH 600V 24A TO247

STMicroelectronics
2,940 -

RFQ

STW28N60M2

Ficha técnica

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 150mOhm @ 12A, 10V 4V @ 250µA 37 nC @ 10 V ±25V 1370 pF @ 100 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP24N60DM2

STP24N60DM2

MOSFET N-CH 600V 18A TO220

STMicroelectronics
3,012 -

RFQ

STP24N60DM2

Ficha técnica

Tube FDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 200mOhm @ 9A, 10V 5V @ 250µA 29 nC @ 10 V ±25V 1055 pF @ 100 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW18N60M2

STW18N60M2

MOSFET N-CH 600V 13A TO247

STMicroelectronics
2,241 -

RFQ

STW18N60M2

Ficha técnica

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 280mOhm @ 6.5A, 10V 4V @ 250µA 21.5 nC @ 10 V ±25V 791 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
EPC2021ENGR

EPC2021ENGR

TRANS GAN 80V 60A BUMPED DIE

EPC
2,170 -

RFQ

EPC2021ENGR

Ficha técnica

Cut Tape (CT) eGaN® Obsolete N-Channel GaNFET (Gallium Nitride) 80 V 60A (Ta) 5V 2.5mOhm @ 29A, 5V 2.5V @ 14mA 15 nC @ 5 V +6V, -4V 1700 pF @ 40 V - - -40°C ~ 150°C (TJ) Surface Mount
STP130N6F7

STP130N6F7

MOSFET N-CH 60V 80A TO220AB

STMicroelectronics
2,128 -

RFQ

STP130N6F7

Ficha técnica

Tube STripFET™ F7 Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 5mOhm @ 40A, 10V 4V @ 250µA 42 nC @ 10 V ±20V 2600 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
EPC2025

EPC2025

GANFET N-CH 300V 4A DIE

EPC
2,127 -

RFQ

Tape & Reel (TR),Cut Tape (CT) eGaN® Obsolete N-Channel GaNFET (Gallium Nitride) 300 V 4A (Ta) 5V 150mOhm @ 3A, 5V 2.5V @ 1mA - +6V, -4V 194 pF @ 240 V - - -40°C ~ 150°C (TJ) Surface Mount
STW88N65M5-4

STW88N65M5-4

MOSFET N-CH 650V 84A TO247-4L

STMicroelectronics
2,252 -

RFQ

STW88N65M5-4

Ficha técnica

Tube MDmesh™ M5 Active N-Channel MOSFET (Metal Oxide) 650 V 84A (Tc) 10V 29mOhm @ 42A, 10V 5V @ 250µA 204 nC @ 10 V ±25V 8825 pF @ 100 V - 450W (Tc) 150°C (TJ) Through Hole
STW33N60DM2

STW33N60DM2

MOSFET N-CH 600V 24A TO247

STMicroelectronics
2,878 -

RFQ

STW33N60DM2

Ficha técnica

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 130mOhm @ 12A, 10V 5V @ 250µA 43 nC @ 10 V ±25V 1870 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
EPC2030ENGRT

EPC2030ENGRT

GANFET NCH 40V 31A DIE

EPC
3,633 -

RFQ

EPC2030ENGRT

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Discontinued at Mosen N-Channel GaNFET (Gallium Nitride) 40 V 31A (Ta) 5V 2.4mOhm @ 30A, 5V 2.5V @ 16mA 18 nC @ 5 V +6V, -4V 1900 pF @ 20 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2031ENGRT

EPC2031ENGRT

GANFET NCH 60V 31A DIE

EPC
3,532 -

RFQ

EPC2031ENGRT

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Discontinued at Mosen N-Channel GaNFET (Gallium Nitride) 60 V 31A (Ta) 5V 2.6mOhm @ 30A, 5V 2.5V @ 15mA 17 nC @ 5 V +6V, -4V 1800 pF @ 300 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2049ENGRT

EPC2049ENGRT

GANFET N-CH 40V 16A DIE

EPC
2,761 -

RFQ

EPC2049ENGRT

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Obsolete N-Channel GaNFET (Gallium Nitride) 40 V 16A (Ta) 5V 5mOhm @ 15A, 5V 2.5V @ 6mA 7.6 nC @ 5 V +6V, -4V 805 pF @ 20 V - - -40°C ~ 150°C (TJ) Surface Mount
AUIRFB3806-IR

AUIRFB3806-IR

MOSFET N-CH 60V 43A TO220AB

International Rectifier
3,211 -

RFQ

AUIRFB3806-IR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) - 15.8mOhm @ 43A, 10V - - - - - 71W (Tc) - Through Hole
IRF6218PBF-IR

IRF6218PBF-IR

MOSFET P-CH 150V 27A TO220AB

International Rectifier
3,771 -

RFQ

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 27A (Tc) - 150mOhm @ 16A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 2210 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS7787PBF-IR

IRFS7787PBF-IR

MOSFET N-CH 75V 76A TO263-3-2

International Rectifier
3,222 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 76A (Tc) - 8.4mOhm @ 46A, 10V 3.7V @ 100µA 109 nC @ 10 V ±20V 4020 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFP1405-IR

AUIRFP1405-IR

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
2,797 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
AUIRFN7107TR-IR

AUIRFN7107TR-IR

MOSFET N-CH 75V 14A/75A TDSON0

International Rectifier
2,319 -

RFQ

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 14A (Ta), 75A (Tc) - 8.5mOhm @ 45A, 10V 4V @ 100µA 77 nC @ 10 V ±20V 3001 pF @ 25 V - 4.4W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
AUIRF1324S-7P-IR

AUIRF1324S-7P-IR

MOSFET N-CH 24V 240A TO263-7

International Rectifier
3,203 -

RFQ

AUIRF1324S-7P-IR

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 24 V 240A (Tc) - 1mOhm @ 160A, 10V 4V @ 250µA 252 nC @ 10 V ±20V 7700 pF @ 19 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3206TRL-IR

AUIRFS3206TRL-IR

AUTOMOTIVE POWER MOSFET

International Rectifier
3,058 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF3504-IR

AUIRF3504-IR

MOSFET N-CH 40V 87A TO220AB

International Rectifier
3,680 -

RFQ

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 87A (Tc) - 9.2mOhm @ 52A, 10V 4V @ 100µA 54 nC @ 10 V ±20V 2150 pF @ 25 V - 143W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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