Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLI2910PBF

IRLI2910PBF

MOSFET N-CH 100V 31A TO220AB FP

Infineon Technologies
2,563 -

RFQ

IRLI2910PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 31A (Tc) 4V, 10V 26mOhm @ 16A, 10V 2V @ 250µA 140 nC @ 5 V ±16V 3700 pF @ 25 V - 63W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP10NK70ZFP

STP10NK70ZFP

MOSFET N-CH 700V 8.6A TO220FP

STMicroelectronics
3,471 -

RFQ

STP10NK70ZFP

Ficha técnica

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 700 V 8.6A (Tc) 10V 850mOhm @ 4.5A, 10V 4.5V @ 100µA 90 nC @ 10 V ±30V 2000 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
EPC2001

EPC2001

GANFET N-CH 100V 25A DIE OUTLINE

EPC
3,667 -

RFQ

EPC2001

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Discontinued at Mosen N-Channel GaNFET (Gallium Nitride) 100 V 25A (Ta) 5V 7mOhm @ 25A, 5V 2.5V @ 5mA 10 nC @ 5 V +6V, -5V 950 pF @ 50 V - - -40°C ~ 125°C (TJ) Surface Mount
EPC2007

EPC2007

GANFET N-CH 100V 6A DIE OUTLINE

EPC
3,924 -

RFQ

EPC2007

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Obsolete N-Channel GaNFET (Gallium Nitride) 100 V 6A (Ta) 5V 30mOhm @ 6A, 5V 2.5V @ 1.2mA 2.8 nC @ 5 V +6V, -5V 205 pF @ 50 V - - -40°C ~ 125°C (TJ) Surface Mount
EPC2010

EPC2010

GANFET N-CH 200V 12A DIE

EPC
2,617 -

RFQ

EPC2010

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Discontinued at Mosen N-Channel GaNFET (Gallium Nitride) 200 V 12A (Ta) 5V 25mOhm @ 6A, 5V 2.5V @ 3mA 7.5 nC @ 5 V +6V, -4V 540 pF @ 100 V - - -40°C ~ 125°C (TJ) Surface Mount
EPC2012

EPC2012

GANFET N-CH 200V 3A DIE

EPC
3,312 -

RFQ

EPC2012

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Discontinued at Mosen N-Channel GaNFET (Gallium Nitride) 200 V 3A (Ta) 5V 100mOhm @ 3A, 5V 2.5V @ 1mA 1.8 nC @ 5 V +6V, -5V 145 pF @ 100 V - - -40°C ~ 125°C (TJ) Surface Mount
EPC2014

EPC2014

GANFET N-CH 40V 10A DIE OUTLINE

EPC
2,712 -

RFQ

EPC2014

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Discontinued at Mosen N-Channel GaNFET (Gallium Nitride) 40 V 10A (Ta) 5V 16mOhm @ 5A, 5V 2.5V @ 2mA 2.8 nC @ 5 V +6V, -5V 325 pF @ 20 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2015

EPC2015

GANFET N-CH 40V 33A DIE OUTLINE

EPC
3,621 -

RFQ

EPC2015

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Discontinued at Mosen N-Channel GaNFET (Gallium Nitride) 40 V 33A (Ta) 5V 4mOhm @ 33A, 5V 2.5V @ 9mA 11.6 nC @ 5 V +6V, -5V 1200 pF @ 20 V - - -40°C ~ 150°C (TJ) Surface Mount
BUK764R0-75C,118

BUK764R0-75C,118

MOSFET N-CH 75V 100A D2PAK

Nexperia USA Inc.
3,972 -

RFQ

BUK764R0-75C,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 4mOhm @ 25A, 10V 4V @ 1mA 142 nC @ 10 V ±20V 11659 pF @ 25 V - 333W (Tc) -55°C ~ 175°C (TJ) Surface Mount
EPC2016

EPC2016

GANFET N-CH 100V 11A DIE

EPC
2,997 -

RFQ

EPC2016

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Discontinued at Mosen N-Channel GaNFET (Gallium Nitride) 100 V 11A (Ta) 5V 16mOhm @ 11A, 5V 2.5V @ 3mA 5.2 nC @ 5 V +6V, -5V 520 pF @ 50 V - - -40°C ~ 125°C (TJ) Surface Mount
STF38N65M5

STF38N65M5

MOSFET N-CH 650V 30A TO220FP

STMicroelectronics
3,067 -

RFQ

STF38N65M5

Ficha técnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 95mOhm @ 15A, 10V 5V @ 250µA 71 nC @ 10 V ±25V 3000 pF @ 100 V - 35W (Tc) 150°C (TJ) Through Hole
BUK7E2R6-60E,127

BUK7E2R6-60E,127

MOSFET N-CH 60V 120A I2PAK

Nexperia USA Inc.
2,345 -

RFQ

BUK7E2R6-60E,127

Ficha técnica

Bulk,Tube Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.6mOhm @ 25A, 10V 4V @ 1mA 158 nC @ 10 V ±20V 11180 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
GA08JT17-247

GA08JT17-247

TRANS SJT 1700V 8A TO247AB

GeneSiC Semiconductor
2,525 -

RFQ

GA08JT17-247

Ficha técnica

Tube - Obsolete - SiC (Silicon Carbide Junction Transistor) 1700 V 8A (Tc) (90°C) - 250mOhm @ 8A - - - - - 48W (Tc) 175°C (TJ) Through Hole
STW24N60M2

STW24N60M2

MOSFET N-CH 600V 18A TO247

STMicroelectronics
3,589 -

RFQ

STW24N60M2

Ficha técnica

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 9A, 10V 4V @ 250µA 29 nC @ 10 V ±25V 1060 pF @ 100 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N7002E-T1-E3

2N7002E-T1-E3

MOSFET N-CH 60V 240MA SOT23-3

Vishay Siliconix
2,371 -

RFQ

2N7002E-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 240mA (Ta) 4.5V, 10V 3Ohm @ 250mA, 10V 2.5V @ 250µA 0.6 nC @ 4.5 V ±20V 21 pF @ 5 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SCH2080KEC

SCH2080KEC

SICFET N-CH 1200V 40A TO247

Rohm Semiconductor
3,087 -

RFQ

SCH2080KEC

Ficha técnica

Tube - Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 40A (Tc) 18V 117mOhm @ 10A, 18V 4V @ 4.4mA 106 nC @ 18 V +22V, -6V 1850 pF @ 800 V - 262W (Tc) 175°C (TJ) Through Hole
EPC2018

EPC2018

GANFET N-CH 150V 12A DIE

EPC
2,322 -

RFQ

EPC2018

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Discontinued at Mosen N-Channel GaNFET (Gallium Nitride) 150 V 12A (Ta) 5V 25mOhm @ 6A, 5V 2.5V @ 3mA 7.5 nC @ 5 V +6V, -5V 540 pF @ 100 V - - -40°C ~ 125°C (TJ) Surface Mount
SCT2160KEC

SCT2160KEC

SICFET N-CH 1200V 22A TO247

Rohm Semiconductor
2,349 -

RFQ

SCT2160KEC

Ficha técnica

Tube - Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 22A (Tc) 18V 208mOhm @ 7A, 18V 4V @ 2.5mA 62 nC @ 18 V +22V, -6V 1200 pF @ 800 V - 165W (Tc) 175°C (TJ) Through Hole
SCT2450KEC

SCT2450KEC

SICFET N-CH 1200V 10A TO247

Rohm Semiconductor
2,779 -

RFQ

SCT2450KEC

Ficha técnica

Tube - Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 10A (Tc) 18V 585mOhm @ 3A, 18V 4V @ 900µA 27 nC @ 18 V +22V, -6V 463 pF @ 800 V - 85W (Tc) 175°C (TJ) Through Hole
SCT2120AFC

SCT2120AFC

SICFET N-CH 650V 29A TO220AB

Rohm Semiconductor
2,846 -

RFQ

SCT2120AFC

Ficha técnica

Tube - Obsolete N-Channel SiCFET (Silicon Carbide) 650 V 29A (Tc) 18V 156mOhm @ 10A, 18V 4V @ 3.3mA 61 nC @ 18 V +22V, -6V 1200 pF @ 500 V - 165W (Tc) 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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