Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFR9024

IRFR9024

MOSFET P-CH 60V 8.8A DPAK

Vishay Siliconix
3,983 -

RFQ

IRFR9024

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 8.8A (Tc) 10V 280mOhm @ 5.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9024TR

IRFR9024TR

MOSFET P-CH 60V 8.8A DPAK

Vishay Siliconix
3,367 -

RFQ

IRFR9024TR

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 8.8A (Tc) 10V 280mOhm @ 5.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9110

IRFR9110

MOSFET P-CH 100V 3.1A DPAK

Vishay Siliconix
2,887 -

RFQ

IRFR9110

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 3.1A (Tc) 10V 1.2Ohm @ 1.9A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9210TR

IRFR9210TR

MOSFET P-CH 200V 1.9A DPAK

Vishay Siliconix
2,336 -

RFQ

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 1.9A (Tc) 10V 3Ohm @ 1.1A, 10V 4V @ 250µA 8.9 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9214

IRFR9214

MOSFET P-CH 250V 2.7A DPAK

Vishay Siliconix
3,016 -

RFQ

IRFR9214

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 3Ohm @ 1.7A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 220 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9220

IRFR9220

MOSFET P-CH 200V 3.6A DPAK

Vishay Siliconix
2,071 -

RFQ

IRFR9220

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 3.6A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 340 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9220TR

IRFR9220TR

MOSFET P-CH 200V 3.6A DPAK

Vishay Siliconix
3,310 -

RFQ

IRFR9220TR

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 3.6A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 340 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9310

IRFR9310

MOSFET P-CH 400V 1.8A DPAK

Vishay Siliconix
2,337 -

RFQ

IRFR9310

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 400 V 1.8A (Tc) 10V 7Ohm @ 1.1A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 270 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9310TR

IRFR9310TR

MOSFET P-CH 400V 1.8A DPAK

Vishay Siliconix
3,752 -

RFQ

IRFR9310TR

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 400 V 1.8A (Tc) 10V 7Ohm @ 1.1A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 270 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFRC20

IRFRC20

MOSFET N-CH 600V 2A DPAK

Vishay Siliconix
3,752 -

RFQ

IRFRC20

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.4Ohm @ 1.2A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFRC20TR

IRFRC20TR

MOSFET N-CH 600V 2A DPAK

Vishay Siliconix
3,504 -

RFQ

IRFRC20TR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.4Ohm @ 1.2A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS11N50A

IRFS11N50A

MOSFET N-CH 500V 11A D2PAK

Vishay Siliconix
2,262 -

RFQ

IRFS11N50A

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFSL9N60A

IRFSL9N60A

MOSFET N-CH 600V 9.2A TO262-3

Vishay Siliconix
2,800 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU014

IRFU014

MOSFET N-CH 60V 7.7A TO251AA

Vishay Siliconix
3,215 -

RFQ

IRFU014

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 7.7A (Tc) 10V 200mOhm @ 4.6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU020

IRFU020

MOSFET N-CH 60V 14A TO251AA

Vishay Siliconix
3,672 -

RFQ

IRFU020

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 100mOhm @ 8.4A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU024

IRFU024

MOSFET N-CH 60V 14A TO251AA

Vishay Siliconix
2,717 -

RFQ

IRFU024

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 100mOhm @ 8.4A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU120

IRFU120

MOSFET N-CH 100V 7.7A TO251AA

Vishay Siliconix
2,568 -

RFQ

IRFU120

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) 10V 270mOhm @ 4.6A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU210

IRFU210

MOSFET N-CH 200V 2.6A TO251AA

Vishay Siliconix
2,689 -

RFQ

IRFU210

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) 10V 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU310

IRFU310

MOSFET N-CH 400V 1.7A TO251AA

Vishay Siliconix
3,741 -

RFQ

IRFU310

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Tc) 10V 3.6Ohm @ 1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU320

IRFU320

MOSFET N-CH 400V 3.1A TO251AA

Vishay Siliconix
2,639 -

RFQ

IRFU320

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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