Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFU3303

IRFU3303

MOSFET N-CH 30V 33A IPAK

Infineon Technologies
3,970 -

RFQ

IRFU3303

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 33A (Tc) 10V 31mOhm @ 18A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 750 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU420

IRFU420

MOSFET N-CH 500V 2.4A TO251AA

Vishay Siliconix
3,936 -

RFQ

IRFU420

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 10V 3Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU5305

IRFU5305

MOSFET P-CH 55V 31A IPAK

Infineon Technologies
3,769 -

RFQ

IRFU5305

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU5505

IRFU5505

MOSFET P-CH 55V 18A IPAK

Infineon Technologies
3,037 -

RFQ

IRFU5505

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 10V 110mOhm @ 9.6A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 650 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU9014

IRFU9014

MOSFET P-CH 60V 5.1A TO251AA

Vishay Siliconix
3,877 -

RFQ

IRFU9014

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU9020

IRFU9020

MOSFET P-CH 50V 9.9A TO251AA

Vishay Siliconix
2,277 -

RFQ

IRFU9020

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 50 V 9.9A (Tc) 10V 280mOhm @ 5.7A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 490 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU9024

IRFU9024

MOSFET P-CH 60V 8.8A TO251AA

Vishay Siliconix
3,751 -

RFQ

IRFU9024

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 8.8A (Tc) 10V 280mOhm @ 5.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU9110

IRFU9110

MOSFET P-CH 100V 3.1A TO251AA

Vishay Siliconix
3,924 -

RFQ

IRFU9110

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 3.1A (Tc) 10V 1.2Ohm @ 1.9A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU9120

IRFU9120

MOSFET P-CH 100V 5.6A TO251AA

Vishay Siliconix
2,367 -

RFQ

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 600mOhm @ 3.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU9120N

IRFU9120N

MOSFET P-CH 100V 6.6A IPAK

Infineon Technologies
2,065 -

RFQ

IRFU9120N

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.6A (Tc) 10V 480mOhm @ 3.9A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU9210

IRFU9210

MOSFET P-CH 200V 1.9A TO251AA

Vishay Siliconix
3,222 -

RFQ

IRFU9210

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 1.9A (Tc) 10V 3Ohm @ 1.1A, 10V 4V @ 250µA 8.9 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU9220

IRFU9220

MOSFET P-CH 200V 3.6A TO251AA

Vishay Siliconix
3,916 -

RFQ

IRFU9220

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 3.6A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 340 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ14S

IRFZ14S

MOSFET N-CH 60V 10A D2PAK

Vishay Siliconix
3,913 -

RFQ

IRFZ14S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 10V 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ24S

IRFZ24S

MOSFET N-CH 60V 17A D2PAK

Vishay Siliconix
3,819 -

RFQ

IRFZ24S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ30

IRFZ30

MOSFET N-CH 50V 30A TO220AB

Vishay Siliconix
3,353 -

RFQ

IRFZ30

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 30A (Tc) 10V 50mOhm @ 16A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 1600 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ34

IRFZ34

MOSFET N-CH 60V 30A TO220AB

Vishay Siliconix
3,310 -

RFQ

IRFZ34

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ34NS

IRFZ34NS

MOSFET N-CH 55V 29A D2PAK

Infineon Technologies
2,489 -

RFQ

IRFZ34NS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ34NSTRR

IRFZ34NSTRR

MOSFET N-CH 55V 29A D2PAK

Infineon Technologies
2,518 -

RFQ

IRFZ34NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ40

IRFZ40

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix
3,122 -

RFQ

IRFZ40

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ44ESTRR

IRFZ44ESTRR

MOSFET N-CH 60V 48A D2PAK

Infineon Technologies
2,057 -

RFQ

IRFZ44ESTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 10V 23mOhm @ 29A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1360 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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