Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLI530G

IRLI530G

MOSFET N-CH 100V 9.7A TO220-3

Vishay Siliconix
3,089 -

RFQ

IRLI530G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.7A (Tc) 4V, 5V 160mOhm @ 5.8A, 5V 2V @ 250µA 28 nC @ 5 V ±10V 930 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLI620G

IRLI620G

MOSFET N-CH 200V 4A TO220-3

Vishay Siliconix
2,354 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 4A (Tc) 4V, 5V 800mOhm @ 2.4A, 5V 2V @ 250µA 16 nC @ 10 V ±10V 360 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLI630G

IRLI630G

MOSFET N-CH 200V 6.2A TO220-3

Vishay Siliconix
2,507 -

RFQ

IRLI630G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 6.2A (Tc) 4V, 5V 400mOhm @ 3.7A, 5V 2V @ 250µA 40 nC @ 10 V ±10V 1100 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLI640G

IRLI640G

MOSFET N-CH 200V 9.9A TO220-3

Vishay Siliconix
3,470 -

RFQ

IRLI640G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.9A (Tc) 4V, 5V 180mOhm @ 5.9A, 5V 2V @ 250µA 66 nC @ 10 V ±10V 1800 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLIZ44G

IRLIZ44G

MOSFET N-CH 60V 30A TO220-3

Vishay Siliconix
3,831 -

RFQ

IRLIZ44G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4V, 5V 28mOhm @ 18A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 3300 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLL014

IRLL014

MOSFET N-CH 60V 2.7A SOT223

Vishay Siliconix
2,744 -

RFQ

IRLL014

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 2.7A (Tc) 4V, 5V 200mOhm @ 1.6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
94-3316

94-3316

MOSFET N-CH 55V 2A SOT223

Infineon Technologies
2,227 -

RFQ

94-3316

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 2A (Ta) - 140mOhm @ 2A, 10V 2V @ 250µA 14 nC @ 10 V - 230 pF @ 25 V - - - Surface Mount
IRLL014NTR

IRLL014NTR

MOSFET N-CH 55V 2A SOT223

Infineon Technologies
2,902 -

RFQ

IRLL014NTR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 2A (Ta) 4V, 10V 140mOhm @ 2A, 10V 2V @ 250µA 14 nC @ 10 V ±16V 230 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLL014TR

IRLL014TR

MOSFET N-CH 60V 2.7A SOT223

Vishay Siliconix
3,832 -

RFQ

IRLL014TR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 2.7A (Tc) 4V, 5V 200mOhm @ 1.6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLL110

IRLL110

MOSFET N-CH 100V 1.5A SOT223

Vishay Siliconix
2,451 -

RFQ

IRLL110

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 1.5A (Tc) 4V, 5V 540mOhm @ 900mA, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLL110TR

IRLL110TR

MOSFET N-CH 100V 1.5A SOT223

Vishay Siliconix
2,761 -

RFQ

IRLL110TR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 1.5A (Tc) 4V, 5V 540mOhm @ 900mA, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR014

IRLR014

MOSFET N-CH 60V 7.7A DPAK

Vishay Siliconix
2,449 -

RFQ

IRLR014

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 7.7A (Tc) 4V, 5V 200mOhm @ 4.6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR014TR

IRLR014TR

MOSFET N-CH 60V 7.7A DPAK

Vishay Siliconix
3,966 -

RFQ

IRLR014TR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 7.7A (Tc) 4V, 5V 200mOhm @ 4.6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR024

IRLR024

MOSFET N-CH 60V 14A DPAK

Vishay Siliconix
2,480 -

RFQ

IRLR024

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 4V, 5V 100mOhm @ 8.4A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR024TR

IRLR024TR

MOSFET N-CH 60V 14A DPAK

Vishay Siliconix
2,503 -

RFQ

IRLR024TR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 4V, 5V 100mOhm @ 8.4A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR110

IRLR110

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix
3,073 -

RFQ

IRLR110

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 4V, 5V 540mOhm @ 2.6A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR110TR

IRLR110TR

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix
3,859 -

RFQ

IRLR110TR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 4V, 5V 540mOhm @ 2.6A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR110TRL

IRLR110TRL

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix
2,077 -

RFQ

IRLR110TRL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 4V, 5V 540mOhm @ 2.6A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR120

IRLR120

MOSFET N-CH 100V 7.7A DPAK

Vishay Siliconix
2,806 -

RFQ

IRLR120

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) 4V, 5V 270mOhm @ 4.6A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR120TR

IRLR120TR

MOSFET N-CH 100V 7.7A DPAK

Vishay Siliconix
3,800 -

RFQ

IRLR120TR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) 4V, 5V 270mOhm @ 4.6A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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