Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFZ44NL

IRFZ44NL

MOSFET N-CH 55V 49A TO262

Infineon Technologies
2,918 -

RFQ

IRFZ44NL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 17.5mOhm @ 25A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1470 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ44S

IRFZ44S

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
2,418 -

RFQ

IRFZ44S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ44STRR

IRFZ44STRR

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
3,336 -

RFQ

IRFZ44STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ46NS

IRFZ46NS

MOSFET N-CH 55V 53A D2PAK

Infineon Technologies
3,426 -

RFQ

IRFZ46NS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 53A (Tc) 10V 16.5mOhm @ 28A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1696 pF @ 25 V - 3.8W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
94-2989

94-2989

MOSFET N-CH 55V 64A D2PAK

Infineon Technologies
3,124 -

RFQ

94-2989

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 64A (Tc) 10V 14mOhm @ 32A, 10V 4V @ 250µA 81 nC @ 10 V ±20V 1970 pF @ 25 V - 3.8W (Ta), 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ48NSTRR

IRFZ48NSTRR

MOSFET N-CH 55V 64A D2PAK

Infineon Technologies
3,341 -

RFQ

IRFZ48NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 64A (Tc) 10V 14mOhm @ 32A, 10V 4V @ 250µA 81 nC @ 10 V ±20V 1970 pF @ 25 V - 3.8W (Ta), 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL1004

IRL1004

MOSFET N-CH 40V 130A TO220AB

Infineon Technologies
3,334 -

RFQ

IRL1004

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 130A (Tc) 4.5V, 10V 6.5mOhm @ 78A, 10V 1V @ 250µA 100 nC @ 4.5 V ±16V 5330 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1004S

IRL1004S

MOSFET N-CH 40V 130A D2PAK

Infineon Technologies
2,647 -

RFQ

IRL1004S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 130A (Tc) 4.5V, 10V 6.5mOhm @ 78A, 10V 1V @ 250µA 100 nC @ 4.5 V ±16V 5330 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
94-2113

94-2113

MOSFET N-CH 30V 116A D2PAK

Infineon Technologies
3,233 -

RFQ

94-2113

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 116A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V 3V @ 250µA 60 nC @ 4.5 V ±16V 3290 pF @ 25 V - 3.8W (Ta), 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL2505S

IRL2505S

MOSFET N-CH 55V 104A D2PAK

Infineon Technologies
2,224 -

RFQ

IRL2505S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 104A (Tc) 4V, 10V 8mOhm @ 54A, 10V 2V @ 250µA 130 nC @ 5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3102

IRL3102

MOSFET N-CH 20V 61A TO220AB

Infineon Technologies
3,422 -

RFQ

IRL3102

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 61A (Tc) 4.5V, 7V 13mOhm @ 37A, 7V 700mV @ 250µA (Min) 58 nC @ 4.5 V ±10V 2500 pF @ 15 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL3102S

IRL3102S

MOSFET N-CH 20V 61A D2PAK

Infineon Technologies
2,436 -

RFQ

IRL3102S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 61A (Tc) 4.5V, 7V 13mOhm @ 37A, 7V 700mV @ 250µA (Min) 58 nC @ 4.5 V ±10V 2500 pF @ 15 V - 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL3103L

IRL3103L

MOSFET N-CH 30V 64A TO262

Infineon Technologies
3,914 -

RFQ

IRL3103L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 12mOhm @ 34A, 10V 1V @ 250µA 33 nC @ 4.5 V ±16V 1650 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3103STRL

IRL3103STRL

MOSFET N-CH 30V 64A D2PAK

Infineon Technologies
2,261 -

RFQ

IRL3103STRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 12mOhm @ 34A, 10V 1V @ 250µA 33 nC @ 4.5 V ±16V 1650 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3202S

IRL3202S

MOSFET N-CH 20V 48A D2PAK

Infineon Technologies
3,564 -

RFQ

IRL3202S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 48A (Tc) 4.5V, 7V 16mOhm @ 29A, 7V 700mV @ 250µA (Min) 43 nC @ 4.5 V ±10V 2000 pF @ 15 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLML6401TR

IRLML6401TR

MOSFET P-CH 12V 4.3A SOT-23

Infineon Technologies
3,038 -

RFQ

IRLML6401TR

Ficha técnica

Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 12 V 4.3A (Ta) - 50mOhm @ 4.3A, 4.5V 950mV @ 250µA 15 nC @ 5 V - 830 pF @ 10 V - - - Surface Mount
IRLML6402TR

IRLML6402TR

MOSFET P-CH 20V 3.7A SOT-23

Infineon Technologies
2,497 -

RFQ

IRLML6402TR

Ficha técnica

Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.7A (Ta) - 65mOhm @ 3.7A, 4.5V 1.2V @ 250µA 12 nC @ 5 V - 633 pF @ 10 V - - - Surface Mount
IRLMS1503TR

IRLMS1503TR

MOSFET N-CH 30V 3.2A 6-TSOP

Infineon Technologies
3,373 -

RFQ

IRLMS1503TR

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 3.2A (Ta) - 100mOhm @ 2.2A, 10V 1V @ 250µA 9.6 nC @ 10 V - 210 pF @ 25 V - - - Surface Mount
IRLMS1902TR

IRLMS1902TR

MOSFET N-CH 20V 3.2A MICRO6

Infineon Technologies
3,372 -

RFQ

IRLMS1902TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 3.2A (Ta) 2.7V, 4.5V 100mOhm @ 2.2A, 4.5V 700mV @ 250µA (Min) 7 nC @ 4.5 V ±12V 300 pF @ 15 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRL3302

IRL3302

MOSFET N-CH 20V 39A TO220AB

Infineon Technologies
2,742 -

RFQ

IRL3302

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 39A (Tc) 4.5V, 7V 20mOhm @ 23A, 7V 700mV @ 250µA (Min) 31 nC @ 4.5 V ±10V 1300 pF @ 15 V - 57W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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