Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLR3103TR

IRLR3103TR

MOSFET N-CH 30V 55A DPAK

Infineon Technologies
2,583 -

RFQ

IRLR3103TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 55A (Tc) 4.5V, 10V 19mOhm @ 33A, 10V 1V @ 250µA 50 nC @ 4.5 V ±16V 1600 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR3303TR

IRLR3303TR

MOSFET N-CH 30V 35A DPAK

Infineon Technologies
3,516 -

RFQ

IRLR3303TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 31mOhm @ 21A, 10V 1V @ 250µA 26 nC @ 4.5 V ±16V 870 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU014

IRLU014

MOSFET N-CH 60V 7.7A TO251AA

Vishay Siliconix
3,830 -

RFQ

IRLU014

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 7.7A (Tc) 4V, 5V 200mOhm @ 4.6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLU024N

IRLU024N

MOSFET N-CH 55V 17A I-PAK

Infineon Technologies
2,602 -

RFQ

IRLU024N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 4V, 10V 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU2703

IRLU2703

MOSFET N-CH 30V 23A I-PAK

Infineon Technologies
3,518 -

RFQ

IRLU2703

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 23A (Tc) 4.5V, 10V 45mOhm @ 14A, 10V 1V @ 250µA 15 nC @ 4.5 V ±16V 450 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU3303

IRLU3303

MOSFET N-CH 30V 35A I-PAK

Infineon Technologies
3,784 -

RFQ

IRLU3303

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 31mOhm @ 21A, 10V 1V @ 250µA 26 nC @ 4.5 V ±16V 870 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ14L

IRLZ14L

MOSFET N-CH 60V 10A TO262-3

Vishay Siliconix
2,366 -

RFQ

IRLZ14L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 4V, 5V 200mOhm @ 6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ14S

IRLZ14S

MOSFET N-CH 60V 10A D2PAK

Vishay Siliconix
2,478 -

RFQ

IRLZ14S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 4V, 5V 200mOhm @ 6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ24NS

IRLZ24NS

MOSFET N-CH 55V 18A D2PAK

Infineon Technologies
3,294 -

RFQ

IRLZ24NS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 4V, 10V 60mOhm @ 11A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ34NS

IRLZ34NS

MOSFET N-CH 55V 30A D2PAK

Infineon Technologies
3,035 -

RFQ

IRLZ34NS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 4V, 10V 35mOhm @ 16A, 10V 2V @ 250µA 25 nC @ 5 V ±16V 880 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ44

IRLZ44

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix
3,294 -

RFQ

IRLZ44

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4V, 5V 28mOhm @ 31A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 3300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ44NSTRR

IRLZ44NSTRR

MOSFET N-CH 55V 47A D2PAK

Infineon Technologies
3,364 -

RFQ

IRLZ44NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 47A (Tc) 4V, 10V 22mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ44S

IRLZ44S

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
2,939 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4V, 5V 28mOhm @ 31A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 3300 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ44STRR

IRLZ44STRR

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
2,603 -

RFQ

IRLZ44STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4V, 5V 28mOhm @ 31A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 3300 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI3443DVTR

SI3443DVTR

MOSFET P-CH 20V 4.4A 6-TSOP

Infineon Technologies
2,199 -

RFQ

SI3443DVTR

Ficha técnica

Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.4A (Ta) - 65mOhm @ 4.4A, 4.5V 1.5V @ 250µA 15 nC @ 4.5 V - 1079 pF @ 10 V - - - Surface Mount
SI4410DY

SI4410DY

MOSFET N-CH 30V 10A 8SO

Infineon Technologies
3,186 -

RFQ

SI4410DY

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V, 10V 13.5mOhm @ 10A, 10V 1V @ 250µA 45 nC @ 10 V ±20V 1585 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4435DYTR

SI4435DYTR

MOSFET P-CH 30V 8A 8SO

Infineon Technologies
3,333 -

RFQ

SI4435DYTR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 4.5V, 10V 20mOhm @ 8A, 10V 1V @ 250µA 60 nC @ 10 V ±20V 2320 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4435DY

SI4435DY

MOSFET P-CH 30V 8A 8SO

Infineon Technologies
3,108 -

RFQ

SI4435DY

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 4.5V, 10V 20mOhm @ 8A, 10V 1V @ 250µA 60 nC @ 10 V ±20V 2320 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFI9Z24G

IRFI9Z24G

MOSFET P-CH 60V 8.5A TO220-3

Vishay Siliconix
3,538 -

RFQ

IRFI9Z24G

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 8.5A (Tc) 10V 280mOhm @ 5.1A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI9520G

IRFI9520G

MOSFET P-CH 100V 5.2A TO220-3

Vishay Siliconix
2,368 -

RFQ

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 5.2A (Tc) 10V 600mOhm @ 3.1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário