Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF3707S

IRF3707S

MOSFET N-CH 30V 62A D2PAK

Infineon Technologies
2,365 -

RFQ

IRF3707S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 12.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF820AS

IRF820AS

MOSFET N-CH 500V 2.5A D2PAK

Vishay Siliconix
2,263 -

RFQ

IRF820AS

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4.5V @ 250µA 17 nC @ 10 V ±30V 340 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF840LCS

IRF840LCS

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix
2,218 -

RFQ

IRF840LCS

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC20S

IRFBC20S

MOSFET N-CH 600V 2.2A D2PAK

Vishay Siliconix
2,301 -

RFQ

IRFBC20S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.2A (Tc) 10V 4.4Ohm @ 1.3A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS17N20D

IRFS17N20D

MOSFET N-CH 200V 16A D2PAK

Infineon Technologies
2,850 -

RFQ

IRFS17N20D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 10V 170mOhm @ 9.8A, 10V 5.5V @ 250µA 50 nC @ 10 V ±30V 1100 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS23N15D

IRFS23N15D

MOSFET N-CH 150V 23A D2PAK

Infineon Technologies
3,348 -

RFQ

IRFS23N15D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 23A (Tc) 10V 90mOhm @ 14A, 10V 5.5V @ 250µA 56 nC @ 10 V ±30V 1200 pF @ 25 V - 3.8W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS23N20D

IRFS23N20D

MOSFET N-CH 200V 24A D2PAK

Infineon Technologies
2,191 -

RFQ

IRFS23N20D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 100mOhm @ 14A, 10V 5.5V @ 250µA 86 nC @ 10 V ±30V 1960 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS33N15D

IRFS33N15D

MOSFET N-CH 150V 33A D2PAK

Infineon Technologies
2,912 -

RFQ

IRFS33N15D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 56mOhm @ 20A, 10V 5.5V @ 250µA 90 nC @ 10 V ±30V 2020 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS9N60A

IRFS9N60A

MOSFET N-CH 600V 9.2A D2PAK

Vishay Siliconix
3,984 -

RFQ

IRFS9N60A

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFSL31N20D

IRFSL31N20D

MOSFET N-CH 200V 31A TO262

Infineon Technologies
3,185 -

RFQ

IRFSL31N20D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1104S

IRL1104S

MOSFET N-CH 40V 104A D2PAK

Infineon Technologies
3,973 -

RFQ

IRL1104S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 104A (Tc) 4.5V, 10V 8mOhm @ 62A, 10V 1V @ 250µA 68 nC @ 4.5 V ±16V 3445 pF @ 25 V - 2.4W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL2703S

IRL2703S

MOSFET N-CH 30V 24A D2PAK

Infineon Technologies
2,311 -

RFQ

IRL2703S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 24A (Tc) 4.5V, 10V 40mOhm @ 14A, 10V 1V @ 250µA 15 nC @ 4.5 V ±16V 450 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3402S

IRL3402S

MOSFET N-CH 20V 85A D2PAK

Infineon Technologies
3,636 -

RFQ

IRL3402S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 85A (Tc) 4.5V, 7V 8mOhm @ 51A, 7V 700mV @ 250µA (Min) 78 nC @ 4.5 V ±10V 3300 pF @ 15 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR18N15D

IRFR18N15D

MOSFET N-CH 150V 18A DPAK

Infineon Technologies
3,247 -

RFQ

IRFR18N15D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) 10V 125mOhm @ 11A, 10V 5.5V @ 250µA 43 nC @ 10 V ±30V 900 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
94-2335

94-2335

MOSFET N-CH 55V 28A DPAK

Infineon Technologies
3,325 -

RFQ

94-2335

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 28A (Tc) 4V, 10V 40mOhm @ 17A, 10V 2V @ 250µA 25 nC @ 5 V ±16V 880 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR8503

IRLR8503

MOSFET N-CH 30V 44A DPAK

Infineon Technologies
2,887 -

RFQ

IRLR8503

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 44A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 3V @ 250µA 20 nC @ 5 V ±20V 1650 pF @ 25 V - 62W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFU110

IRFU110

MOSFET N-CH 100V 4.3A TO251AA

Vishay Siliconix
2,458 -

RFQ

IRFU110

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 10V 540mOhm @ 900mA, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU1205

IRFU1205

MOSFET N-CH 55V 44A IPAK

Infineon Technologies
3,630 -

RFQ

IRFU1205

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 44A (Tc) 10V 27mOhm @ 26A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1300 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU13N15D

IRFU13N15D

MOSFET N-CH 150V 14A IPAK

Infineon Technologies
2,778 -

RFQ

IRFU13N15D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 14A (Tc) 10V 180mOhm @ 8.3A, 10V 5.5V @ 250µA 29 nC @ 10 V ±30V 620 pF @ 25 V - 86W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU18N15D

IRFU18N15D

MOSFET N-CH 150V 18A IPAK

Infineon Technologies
2,997 -

RFQ

IRFU18N15D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) 10V 125mOhm @ 11A, 10V 5.5V @ 250µA 43 nC @ 10 V ±30V 900 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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