Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7464

IRF7464

MOSFET N-CH 200V 1.2A 8SO

Infineon Technologies
2,940 -

RFQ

IRF7464

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 1.2A (Ta) 10V 730mOhm @ 720mA, 10V 5.5V @ 250µA 14 nC @ 10 V ±30V 280 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7466

IRF7466

MOSFET N-CH 30V 11A 8SO

Infineon Technologies
2,150 -

RFQ

IRF7466

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 12.5mOhm @ 11A, 10V 3V @ 250µA 23 nC @ 4.5 V ±20V 2100 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7467

IRF7467

MOSFET N-CH 30V 11A 8SO

Infineon Technologies
3,932 -

RFQ

IRF7467

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 2.8V, 10V 12mOhm @ 11A, 10V 2V @ 250µA 32 nC @ 4.5 V ±12V 2530 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7468

IRF7468

MOSFET N-CH 40V 9.4A 8SO

Infineon Technologies
3,208 -

RFQ

IRF7468

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 9.4A (Ta) 4.5V, 10V 15.5mOhm @ 9.4A, 10V 2V @ 250µA 34 nC @ 4.5 V ±12V 2460 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4420DY

SI4420DY

MOSFET N-CH 30V 12.5A 8SO

Infineon Technologies
2,245 -

RFQ

SI4420DY

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12.5A (Ta) 4.5V, 10V 9mOhm @ 12.5A, 10V 1V @ 250µA 78 nC @ 10 V ±20V 2240 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFL024N

IRFL024N

MOSFET N-CH 55V 2.8A SOT223

Infineon Technologies
3,600 -

RFQ

IRFL024N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 2.8A (Ta) 10V 75mOhm @ 2.8A, 10V 4V @ 250µA 18.3 nC @ 10 V ±20V 400 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFL1006

IRFL1006

MOSFET N-CH 60V 1.6A SOT223

Infineon Technologies
3,264 -

RFQ

IRFL1006

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 1.6A (Ta) 10V 220mOhm @ 1.6A, 10V 4V @ 250µA 8 nC @ 10 V ±20V 160 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLL2703

IRLL2703

MOSFET N-CH 30V 3.9A SOT223

Infineon Technologies
3,521 -

RFQ

IRLL2703

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 3.9A (Ta) 4V, 10V 45mOhm @ 3.9A, 10V 2.4V @ 250µA 14 nC @ 5 V ±16V 530 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FA38SA50LC

FA38SA50LC

MOSFET N-CH 500V 38A SOT-227

Vishay General Semiconductor - Diodes Division
3,815 -

RFQ

FA38SA50LC

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 38A (Tc) 10V 130mOhm @ 23A, 10V 4V @ 250µA 420 nC @ 10 V ±20V 6900 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
FA57SA50LC

FA57SA50LC

MOSFET N-CH 500V 57A SOT-227

Vishay General Semiconductor - Diodes Division
2,509 -

RFQ

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 57A (Tc) 10V 80mOhm @ 34A, 10V 4V @ 250µA 338 nC @ 10 V ±20V 10000 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IRFBA1404P

IRFBA1404P

MOSFET N-CH 40V 206A SUPER-220

Infineon Technologies
3,100 -

RFQ

IRFBA1404P

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 206A (Tc) 10V 3.7mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 300W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRLBA1304

IRLBA1304

MOSFET N-CH 40V 185A SUPER-220

Infineon Technologies
3,976 -

RFQ

IRLBA1304

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 185A (Tc) 4.5V, 10V 4mOhm @ 110A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 7660 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLBA1304P

IRLBA1304P

MOSFET N-CH 40V 185A SUPER-220

Infineon Technologies
2,577 -

RFQ

IRLBA1304P

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 185A (Tc) 4.5V, 10V 4mOhm @ 110A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 7660 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLBA3803

IRLBA3803

MOSFET N-CH 30V 179A SUPER-220

Vishay Siliconix
2,957 -

RFQ

IRLBA3803

Ficha técnica

Tube - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 179A (Tc) 4.5V, 10V 5mOhm @ 71A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 5000 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLBA3803P

IRLBA3803P

MOSFET N-CH 30V 179A SUPER-220

Infineon Technologies
3,055 -

RFQ

IRLBA3803P

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 179A (Tc) - 5mOhm @ 71A, 10V 1V @ 250µA 140 nC @ 4.5 V - 5000 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFBL3703

IRFBL3703

MOSFET N-CH 30V 260A SUPER D2PAK

Infineon Technologies
2,403 -

RFQ

IRFBL3703

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 260A (Tc) 7V, 10V 2.5mOhm @ 76A, 10V 4V @ 250µA 209 nC @ 10 V ±20V 8250 pF @ 25 V - 3.8W (Ta), 300W (Tc) - Surface Mount
IRLBL1304

IRLBL1304

MOSFET N-CH 40V 185A SUPER D2PAK

Infineon Technologies
2,852 -

RFQ

IRLBL1304

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 185A (Tc) 4.5V, 10V 4.5mOhm @ 110A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 7660 pF @ 25 V - 300W (Tc) - Surface Mount
IRL3215

IRL3215

MOSFET N-CH 150V 12A TO220AB

Infineon Technologies
3,049 -

RFQ

IRL3215

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 12A (Tc) 4V, 10V 166mOhm @ 7.2A, 10V 2V @ 250µA 35 nC @ 5 V ±16V 775 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3402

IRL3402

MOSFET N-CH 20V 85A TO220AB

Infineon Technologies
2,691 -

RFQ

IRL3402

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 85A (Tc) 4.5V, 7V 8mOhm @ 51A, 7V 700mV @ 250µA (Min) 78 nC @ 4.5 V ±10V 3300 pF @ 15 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLI2505

IRLI2505

MOSFET N-CH 55V 58A TO220AB FP

Infineon Technologies
2,308 -

RFQ

IRLI2505

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 58A (Tc) 4V, 10V 8mOhm @ 31A, 10V 2V @ 250µA 130 nC @ 5 V ±16V 5000 pF @ 25 V - 63W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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