Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF3704

IRF3704

MOSFET N-CH 20V 77A TO220AB

Infineon Technologies
3,465 -

RFQ

IRF3704

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3706

IRF3706

MOSFET N-CH 20V 77A TO220AB

Infineon Technologies
2,402 -

RFQ

IRF3706

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 2.8V, 10V 8.5mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF737LC

IRF737LC

MOSFET N-CH 300V 6.1A TO220AB

Vishay Siliconix
3,614 -

RFQ

IRF737LC

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 300 V 6.1A (Tc) 10V 750mOhm @ 3.7A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 430 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLML5203

IRLML5203

MOSFET P-CH 30V 3A MICRO3/SOT23

Infineon Technologies
2,866 -

RFQ

IRLML5203

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 3A (Ta) 4.5V, 10V 98mOhm @ 3A, 10V 2.5V @ 250µA 14 nC @ 10 V ±20V 510 pF @ 25 V - 1.25W (Ta) - Surface Mount
IRLMS4502TR

IRLMS4502TR

MOSFET P-CH 12V 5.5A MICRO6

Infineon Technologies
3,488 -

RFQ

IRLMS4502TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 5.5A (Ta) 2.5V, 4.5V 42mOhm @ 5.5A, 4.5V 600mV @ 250µA (Min) 33 nC @ 5 V ±12V 1820 pF @ 10 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7534D1

IRF7534D1

MOSFET P-CH 20V 4.3A MICRO8

Infineon Technologies
2,840 -

RFQ

IRF7534D1

Ficha técnica

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.3A (Ta) 2.5V, 4.5V 55mOhm @ 4.3A, 4.5V 1.2V @ 250µA 15 nC @ 5 V ±12V 1066 pF @ 10 V Schottky Diode (Isolated) 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7526D1

IRF7526D1

MOSFET P-CH 30V 2A MICRO8

Infineon Technologies
3,736 -

RFQ

IRF7526D1

Ficha técnica

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 4.5V, 10V 200mOhm @ 1.2A, 10V 1V @ 250µA 11 nC @ 10 V ±20V 180 pF @ 25 V Schottky Diode (Isolated) 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7233TR

IRF7233TR

MOSFET P-CH 12V 9.5A 8SO

Infineon Technologies
2,160 -

RFQ

IRF7233TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 9.5A (Ta) 2.5V, 4.5V 20mOhm @ 9.5A, 4.5V 600mV @ 250µA (Min) 74 nC @ 5 V ±12V 6000 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF730ASTRL

IRF730ASTRL

MOSFET N-CH 400V 5.5A D2PAK

Vishay Siliconix
3,592 -

RFQ

IRF730ASTRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4.5V @ 250µA 22 nC @ 10 V ±30V 600 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF730ASTRR

IRF730ASTRR

MOSFET N-CH 400V 5.5A D2PAK

Vishay Siliconix
3,480 -

RFQ

IRF730ASTRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4.5V @ 250µA 22 nC @ 10 V ±30V 600 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF730L

IRF730L

MOSFET N-CH 400V 5.5A I2PAK

Vishay Siliconix
2,623 -

RFQ

IRF730L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 600 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
IRF820STRR

IRF820STRR

MOSFET N-CH 500V 2.5A D2PAK

Vishay Siliconix
2,677 -

RFQ

IRF820STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 360 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF830ASTRL

IRF830ASTRL

MOSFET N-CH 500V 5A D2PAK

Vishay Siliconix
3,513 -

RFQ

IRF830ASTRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 620 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF830L

IRF830L

MOSFET N-CH 500V 4.5A I2PAK

Vishay Siliconix
3,536 -

RFQ

IRF830L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF830STRL

IRF830STRL

MOSFET N-CH 500V 4.5A D2PAK

Vishay Siliconix
3,140 -

RFQ

IRF830STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF820A

IRF820A

MOSFET N-CH 500V 2.5A TO220AB

Vishay Siliconix
3,093 -

RFQ

IRF820A

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4.5V @ 250µA 17 nC @ 10 V ±30V 340 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB17N20D

IRFB17N20D

MOSFET N-CH 200V 16A TO220AB

Infineon Technologies
2,047 -

RFQ

IRFB17N20D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 10V 170mOhm @ 9.8A, 10V 5.5V @ 250µA 50 nC @ 10 V ±30V 1100 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB23N20D

IRFB23N20D

MOSFET N-CH 200V 24A TO220AB

Infineon Technologies
2,953 -

RFQ

IRFB23N20D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 100mOhm @ 14A, 10V 5.5V @ 250µA 86 nC @ 10 V ±30V 1960 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB33N15D

IRFB33N15D

MOSFET N-CH 150V 33A TO220AB

Infineon Technologies
2,625 -

RFQ

IRFB33N15D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 56mOhm @ 20A, 10V 5.5V @ 250µA 90 nC @ 10 V ±30V 2020 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB41N15D

IRFB41N15D

MOSFET N-CH 150V 41A TO220AB

Infineon Technologies
2,266 -

RFQ

IRFB41N15D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2520 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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