| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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                    IRFB9N30AMOSFET N-CH 300V 9.3A TO220AB Vishay Siliconix |  
                3,457 | - | 
                
                    RFQ | 
                    
                
                  
                    
                
                     Ficha técnica  | 
				 
                Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 300 V | 9.3A (Tc) | 10V | 450mOhm @ 5.6A, 10V | 4V @ 250µA | 33 nC @ 10 V | ±30V | 920 pF @ 25 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
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                    IRFZ48RMOSFET N-CH 60V 50A TO220AB Vishay Siliconix |  
                2,484 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 18mOhm @ 43A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IRL1104MOSFET N-CH 40V 104A TO220AB Infineon Technologies |  
                2,050 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 104A (Tc) | 4.5V, 10V | 8mOhm @ 62A, 10V | 1V @ 250µA | 68 nC @ 4.5 V | ±16V | 3445 pF @ 25 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IRFI734GMOSFET N-CH 450V 3.4A TO220-3 Vishay Siliconix |  
                2,797 | - | 
                
                    RFQ | 
                    
                
                  
                    
                
                     Ficha técnica  | 
				 
                Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 450 V | 3.4A (Tc) | 10V | 1.2Ohm @ 2A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±20V | 680 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IRFI740GLCMOSFET N-CH 400V 5.7A TO220-3 Vishay Siliconix |  
                3,834 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 5.7A (Tc) | 10V | 550mOhm @ 3.4A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IRFIBC40GLCMOSFET N-CH 600V 3.5A TO220-3 Vishay Siliconix |  
                2,779 | - | 
                
                    RFQ | 
                    
                   Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.5A (Tc) | 10V | 1.2Ohm @ 2.1A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±20V | 1100 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
                     
                    
                     
                     
                    
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                    IRLIZ14GMOSFET N-CH 60V 8A TO220-3 Vishay Siliconix |  
                2,395 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 8A (Tc) | 4V, 5V | 200mOhm @ 4.8A, 5V | 2V @ 250µA | 8.4 nC @ 5 V | ±10V | 400 pF @ 25 V | - | 27W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IRLIZ24GMOSFET N-CH 60V 14A TO220-3 Vishay Siliconix |  
                3,639 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Tc) | 4V, 5V | 100mOhm @ 8.4A, 5V | 2V @ 250µA | 18 nC @ 5 V | ±10V | 870 pF @ 25 V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IRLIZ34GMOSFET N-CH 60V 20A TO220-3 Vishay Siliconix |  
                3,007 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Tc) | 4V, 5V | 50mOhm @ 12A, 5V | 2V @ 250µA | 35 nC @ 5 V | ±10V | 1600 pF @ 25 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IRFP350LCMOSFET N-CH 400V 16A TO247-3 Vishay Siliconix |  
                2,120 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 16A (Tc) | 10V | 300mOhm @ 9.6A, 10V | 4V @ 250µA | 76 nC @ 10 V | ±30V | 2200 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IRF1010ELMOSFET N-CH 60V 84A TO262 Infineon Technologies |  
                3,577 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 84A (Tc) | 10V | 12mOhm @ 50A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 3210 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IRF1010NLMOSFET N-CH 55V 85A TO262 Infineon Technologies |  
                3,528 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 85A (Tc) | 10V | 11mOhm @ 43A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 3210 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IRF1310NLMOSFET N-CH 100V 42A TO262 Infineon Technologies |  
                2,907 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 10V | 36mOhm @ 22A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 3.8W (Ta), 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IRF1404LMOSFET N-CH 40V 162A TO262 Infineon Technologies |  
                3,952 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 162A (Tc) | 10V | 4mOhm @ 95A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 7360 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IRF2807LMOSFET N-CH 75V 82A TO262 Infineon Technologies |  
                3,038 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 82A (Tc) | 10V | 13mOhm @ 43A, 10V | 4V @ 250µA | 160 nC @ 10 V | ±20V | 3820 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IRF3205LMOSFET N-CH 55V 110A TO262 Infineon Technologies |  
                3,334 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 110A (Tc) | 10V | 8mOhm @ 62A, 10V | 4V @ 250µA | 146 nC @ 10 V | ±20V | 3247 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IRF3315LMOSFET N-CH 150V 21A TO262 Infineon Technologies |  
                3,555 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 21A (Tc) | 10V | 82mOhm @ 12A, 10V | 4V @ 250µA | 95 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IRF3415LMOSFET N-CH 150V 43A TO262 Infineon Technologies |  
                3,773 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 43A (Tc) | 10V | 42mOhm @ 22A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IRF3515LMOSFET N-CH 150V 41A TO262 Infineon Technologies |  
                2,203 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 41A (Tc) | 10V | 45mOhm @ 25A, 10V | 4.5V @ 250µA | 107 nC @ 10 V | ±30V | 2260 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IRF3704LMOSFET N-CH 20V 77A TO262 Infineon Technologies |  
                3,692 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 77A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 19 nC @ 4.5 V | ±20V | 1996 pF @ 10 V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |