Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFB9N30A

IRFB9N30A

MOSFET N-CH 300V 9.3A TO220AB

Vishay Siliconix
3,457 -

RFQ

IRFB9N30A

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 300 V 9.3A (Tc) 10V 450mOhm @ 5.6A, 10V 4V @ 250µA 33 nC @ 10 V ±30V 920 pF @ 25 V - 96W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ48R

IRFZ48R

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix
2,484 -

RFQ

IRFZ48R

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1104

IRL1104

MOSFET N-CH 40V 104A TO220AB

Infineon Technologies
2,050 -

RFQ

IRL1104

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 104A (Tc) 4.5V, 10V 8mOhm @ 62A, 10V 1V @ 250µA 68 nC @ 4.5 V ±16V 3445 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI734G

IRFI734G

MOSFET N-CH 450V 3.4A TO220-3

Vishay Siliconix
2,797 -

RFQ

IRFI734G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 3.4A (Tc) 10V 1.2Ohm @ 2A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 680 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI740GLC

IRFI740GLC

MOSFET N-CH 400V 5.7A TO220-3

Vishay Siliconix
3,834 -

RFQ

IRFI740GLC

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 5.7A (Tc) 10V 550mOhm @ 3.4A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIBC40GLC

IRFIBC40GLC

MOSFET N-CH 600V 3.5A TO220-3

Vishay Siliconix
2,779 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.5A (Tc) 10V 1.2Ohm @ 2.1A, 10V 4V @ 250µA 39 nC @ 10 V ±20V 1100 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLIZ14G

IRLIZ14G

MOSFET N-CH 60V 8A TO220-3

Vishay Siliconix
2,395 -

RFQ

IRLIZ14G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 8A (Tc) 4V, 5V 200mOhm @ 4.8A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 27W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLIZ24G

IRLIZ24G

MOSFET N-CH 60V 14A TO220-3

Vishay Siliconix
3,639 -

RFQ

IRLIZ24G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 4V, 5V 100mOhm @ 8.4A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLIZ34G

IRLIZ34G

MOSFET N-CH 60V 20A TO220-3

Vishay Siliconix
3,007 -

RFQ

IRLIZ34G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4V, 5V 50mOhm @ 12A, 5V 2V @ 250µA 35 nC @ 5 V ±10V 1600 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP350LC

IRFP350LC

MOSFET N-CH 400V 16A TO247-3

Vishay Siliconix
2,120 -

RFQ

IRFP350LC

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 16A (Tc) 10V 300mOhm @ 9.6A, 10V 4V @ 250µA 76 nC @ 10 V ±30V 2200 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF1010EL

IRF1010EL

MOSFET N-CH 60V 84A TO262

Infineon Technologies
3,577 -

RFQ

IRF1010EL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 84A (Tc) 10V 12mOhm @ 50A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3210 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1010NL

IRF1010NL

MOSFET N-CH 55V 85A TO262

Infineon Technologies
3,528 -

RFQ

IRF1010NL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 85A (Tc) 10V 11mOhm @ 43A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3210 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1310NL

IRF1310NL

MOSFET N-CH 100V 42A TO262

Infineon Technologies
2,907 -

RFQ

IRF1310NL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 36mOhm @ 22A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1900 pF @ 25 V - 3.8W (Ta), 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1404L

IRF1404L

MOSFET N-CH 40V 162A TO262

Infineon Technologies
3,952 -

RFQ

IRF1404L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 162A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF2807L

IRF2807L

MOSFET N-CH 75V 82A TO262

Infineon Technologies
3,038 -

RFQ

IRF2807L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 82A (Tc) 10V 13mOhm @ 43A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 3820 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3205L

IRF3205L

MOSFET N-CH 55V 110A TO262

Infineon Technologies
3,334 -

RFQ

IRF3205L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8mOhm @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V 3247 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3315L

IRF3315L

MOSFET N-CH 150V 21A TO262

Infineon Technologies
3,555 -

RFQ

IRF3315L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 10V 82mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 1300 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3415L

IRF3415L

MOSFET N-CH 150V 43A TO262

Infineon Technologies
3,773 -

RFQ

IRF3415L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 10V 42mOhm @ 22A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 2400 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3515L

IRF3515L

MOSFET N-CH 150V 41A TO262

Infineon Technologies
2,203 -

RFQ

IRF3515L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 4.5V @ 250µA 107 nC @ 10 V ±30V 2260 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3704L

IRF3704L

MOSFET N-CH 20V 77A TO262

Infineon Technologies
3,692 -

RFQ

IRF3704L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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