Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF3706L

IRF3706L

MOSFET N-CH 20V 77A TO262

Infineon Technologies
3,854 -

RFQ

IRF3706L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 2.8V, 10V 8.5mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3707L

IRF3707L

MOSFET N-CH 30V 62A TO262

Infineon Technologies
2,193 -

RFQ

IRF3707L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 12.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3710L

IRF3710L

MOSFET N-CH 100V 57A TO262

Infineon Technologies
3,403 -

RFQ

IRF3710L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 10V 23mOhm @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3130 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF530NL

IRF530NL

MOSFET N-CH 100V 17A TO262

Infineon Technologies
2,435 -

RFQ

IRF530NL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 10V 90mOhm @ 9A, 10V 4V @ 250µA 37 nC @ 10 V ±20V 920 pF @ 25 V - 3.8W (Ta), 70W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF540NL

IRF540NL

MOSFET N-CH 100V 33A TO262

Infineon Technologies
3,965 -

RFQ

IRF540NL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 10V 44mOhm @ 16A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 1960 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF640NL

IRF640NL

MOSFET N-CH 200V 18A TO262

Infineon Technologies
2,522 -

RFQ

IRF640NL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 150mOhm @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1160 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF730AL

IRF730AL

MOSFET N-CH 400V 5.5A I2PAK

Vishay Siliconix
2,712 -

RFQ

IRF730AL

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4.5V @ 250µA 22 nC @ 10 V ±30V 600 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF740AL

IRF740AL

MOSFET N-CH 400V 10A I2PAK

Vishay Siliconix
3,997 -

RFQ

IRF740AL

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1030 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF820AL

IRF820AL

MOSFET N-CH 500V 2.5A I2PAK

Vishay Siliconix
3,850 -

RFQ

IRF820AL

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4.5V @ 250µA 17 nC @ 10 V ±30V 340 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF830AL

IRF830AL

MOSFET N-CH 500V 5A I2PAK

Vishay Siliconix
3,258 -

RFQ

IRF830AL

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 620 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF840LCL

IRF840LCL

MOSFET N-CH 500V 8A I2PAK

Vishay Siliconix
2,741 -

RFQ

IRF840LCL

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC20L

IRFBC20L

MOSFET N-CH 600V 2.2A I2PAK

Vishay Siliconix
3,931 -

RFQ

IRFBC20L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.2A (Tc) 10V 4.4Ohm @ 1.3A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC30L

IRFBC30L

MOSFET N-CH 600V 3.6A I2PAK

Vishay Siliconix
3,432 -

RFQ

IRFBC30L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC40L

IRFBC40L

MOSFET N-CH 600V 6.2A I2PAK

Vishay Siliconix
3,367 -

RFQ

IRFBC40L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBF20L

IRFBF20L

MOSFET N-CH 900V 1.7A I2PAK

Vishay Siliconix
2,538 -

RFQ

IRFBF20L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 3.1W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFSL11N50A

IRFSL11N50A

MOSFET N-CH 500V 11A TO262-3

Vishay Siliconix
2,588 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 550mOhm @ 6.6A, 10V 4V @ 250µA 51 nC @ 10 V ±30V 1426 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL17N20D

IRFSL17N20D

MOSFET N-CH 200V 16A TO262

Infineon Technologies
3,326 -

RFQ

IRFSL17N20D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 10V 170mOhm @ 9.8A, 10V 5.5V @ 250µA 50 nC @ 10 V ±30V 1100 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL23N15D

IRFSL23N15D

MOSFET N-CH 150V 23A TO262

Infineon Technologies
2,867 -

RFQ

IRFSL23N15D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 23A (Tc) 10V 90mOhm @ 14A, 10V 5.5V @ 250µA 56 nC @ 10 V ±30V 1200 pF @ 25 V - 3.8W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL23N20D

IRFSL23N20D

MOSFET N-CH 200V 24A TO262

Infineon Technologies
2,358 -

RFQ

IRFSL23N20D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 100mOhm @ 14A, 10V 5.5V @ 250µA 86 nC @ 10 V ±30V 1960 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL33N15D

IRFSL33N15D

MOSFET N-CH 150V 33A TO262

Infineon Technologies
3,190 -

RFQ

IRFSL33N15D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 56mOhm @ 20A, 10V 5.5V @ 250µA 90 nC @ 10 V ±30V 2020 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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