Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7233

IRF7233

MOSFET P-CH 12V 9.5A 8SO

Infineon Technologies
3,373 -

RFQ

IRF7233

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 9.5A (Ta) 2.5V, 4.5V 20mOhm @ 9.5A, 4.5V 600mV @ 250µA (Min) 74 nC @ 5 V ±12V 6000 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFI9640G

IRFI9640G

MOSFET P-CH 200V 6.1A TO220-3

Vishay Siliconix
3,119 -

RFQ

IRFI9640G

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 6.1A (Tc) 10V 500mOhm @ 3.7A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI9634G

IRFI9634G

MOSFET P-CH 250V 4.1A TO220-3

Vishay Siliconix
3,475 -

RFQ

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 250 V 4.1A (Tc) 10V 1Ohm @ 2.5A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 680 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF5210L

IRF5210L

MOSFET P-CH 100V 40A TO262

Infineon Technologies
2,020 -

RFQ

IRF5210L

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 60mOhm @ 24A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 2700 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF5305L

IRF5305L

MOSFET P-CH 55V 31A TO262

Infineon Technologies
3,674 -

RFQ

IRF5305L

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 60mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF6215L

IRF6215L

MOSFET P-CH 150V 13A TO262

Infineon Technologies
2,311 -

RFQ

IRF6215L

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9520NL

IRF9520NL

MOSFET P-CH 100V 6.8A TO262

Infineon Technologies
2,530 -

RFQ

IRF9520NL

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 10V 480mOhm @ 4A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 350 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9530NL

IRF9530NL

MOSFET P-CH 100V 14A TO262

Infineon Technologies
3,719 -

RFQ

IRF9530NL

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 200mOhm @ 8.4A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 3.8W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9540NL

IRF9540NL

MOSFET P-CH 100V 23A TO262

Infineon Technologies
3,004 -

RFQ

IRF9540NL

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 10V 117mOhm @ 11A, 10V 4V @ 250µA 97 nC @ 10 V ±20V 1300 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9Z24NL

IRF9Z24NL

MOSFET P-CH 55V 12A TO262

Infineon Technologies
3,866 -

RFQ

IRF9Z24NL

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 12A (Tc) 10V 175mOhm @ 7.2A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9Z34NL

IRF9Z34NL

MOSFET P-CH 55V 19A TO262

Infineon Technologies
2,314 -

RFQ

IRF9Z34NL

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 620 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1010ESTRR

IRF1010ESTRR

MOSFET N-CH 60V 84A D2PAK

Infineon Technologies
3,975 -

RFQ

IRF1010ESTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 84A (Tc) 10V 12mOhm @ 50A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3210 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1010NSTRL

IRF1010NSTRL

MOSFET N-CH 55V 85A D2PAK

Infineon Technologies
2,930 -

RFQ

IRF1010NSTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 85A (Tc) 10V 11mOhm @ 43A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3210 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1010NSTRR

IRF1010NSTRR

MOSFET N-CH 55V 85A D2PAK

Infineon Technologies
2,726 -

RFQ

IRF1010NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 85A (Tc) 10V 11mOhm @ 43A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3210 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1104L

IRF1104L

MOSFET N-CH 40V 100A TO262

Infineon Technologies
2,840 -

RFQ

IRF1104L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 9mOhm @ 60A, 10V 4V @ 250µA 93 nC @ 10 V ±20V 2900 pF @ 25 V - 2.4W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1104S

IRF1104S

MOSFET N-CH 40V 100A D2PAK

Infineon Technologies
2,020 -

RFQ

IRF1104S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 9mOhm @ 60A, 10V 4V @ 250µA 93 nC @ 10 V ±20V 2900 pF @ 25 V - 2.4W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1104STRL

IRF1104STRL

MOSFET N-CH 40V 100A D2PAK

Infineon Technologies
3,582 -

RFQ

IRF1104STRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 9mOhm @ 60A, 10V 4V @ 250µA 93 nC @ 10 V ±20V 2900 pF @ 25 V - 2.4W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1104STRR

IRF1104STRR

MOSFET N-CH 40V 100A D2PAK

Infineon Technologies
3,849 -

RFQ

IRF1104STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 9mOhm @ 60A, 10V 4V @ 250µA 93 nC @ 10 V ±20V 2900 pF @ 25 V - 2.4W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1310NSTRR

IRF1310NSTRR

MOSFET N-CH 100V 42A D2PAK

Infineon Technologies
2,499 -

RFQ

IRF1310NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 36mOhm @ 22A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1900 pF @ 25 V - 3.8W (Ta), 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1404STRR

IRF1404STRR

MOSFET N-CH 40V 162A D2PAK

Infineon Technologies
2,950 -

RFQ

IRF1404STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 162A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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