Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFU214

IRFU214

MOSFET N-CH 250V 2.2A TO251AA

Vishay Siliconix
2,653 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 2.2A (Tc) 10V 2Ohm @ 1.3A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU224

IRFU224

MOSFET N-CH 250V 3.8A TO251AA

Vishay Siliconix
2,271 -

RFQ

IRFU224

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 3.8A (Tc) 10V 1.1Ohm @ 2.3A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU3910

IRFU3910

MOSFET N-CH 100V 16A IPAK

Infineon Technologies
3,400 -

RFQ

IRFU3910

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 16A (Tc) 10V 115mOhm @ 10A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 640 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU4105

IRFU4105

MOSFET N-CH 55V 27A IPAK

Infineon Technologies
2,184 -

RFQ

IRFU4105

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 27A (Tc) 10V 45mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU6215

IRFU6215

MOSFET P-CH 150V 13A IPAK

Infineon Technologies
2,719 -

RFQ

IRFU6215

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 295mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU9024N

IRFU9024N

MOSFET P-CH 55V 11A IPAK

Infineon Technologies
3,045 -

RFQ

IRFU9024N

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 11A (Tc) 10V 175mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU9214

IRFU9214

MOSFET P-CH 250V 2.7A TO251AA

Vishay Siliconix
3,068 -

RFQ

IRFU9214

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 3Ohm @ 1.7A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 220 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLMS2002

IRLMS2002

MOSFET N-CH 20V 6.5A MICRO6

Infineon Technologies
2,203 -

RFQ

IRLMS2002

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 6.5A (Ta) 2.5V, 4.5V 30mOhm @ 6.5A, 4.5V 1.2V @ 250µA 22 nC @ 5 V ±12V 1310 pF @ 15 V - 2W (Ta) - Surface Mount
IRF7521D1

IRF7521D1

MOSFET N-CH 20V 2.4A MICRO8

Infineon Technologies
3,813 -

RFQ

IRF7521D1

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2.4A (Ta) 2.7V, 4.5V 135mOhm @ 1.7A, 4.5V 700mV @ 250µA (Min) 8 nC @ 4.5 V ±12V 260 pF @ 15 V Schottky Diode (Isolated) 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7523D1

IRF7523D1

MOSFET N-CH 30V 2.7A MICRO8

Infineon Technologies
2,456 -

RFQ

IRF7523D1

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 2.7A (Ta) 4.5V, 10V 130mOhm @ 1.7A, 10V 1V @ 250µA 12 nC @ 10 V ±20V 210 pF @ 25 V Schottky Diode (Isolated) 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7607

IRF7607

MOSFET N-CH 20V 6.5A MICRO8

Infineon Technologies
2,841 -

RFQ

IRF7607

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 6.5A (Ta) 2.5V, 4.5V 30mOhm @ 6.5A, 4.5V 1.2V @ 250µA 22 nC @ 5 V ±12V 1310 pF @ 15 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFU9310

IRFU9310

MOSFET P-CH 400V 1.8A TO251AA

Vishay Siliconix
2,838 -

RFQ

IRFU9310

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 400 V 1.8A (Tc) 10V 7Ohm @ 1.1A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 270 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU9N20D

IRFU9N20D

MOSFET N-CH 200V 9.4A IPAK

Infineon Technologies
3,665 -

RFQ

IRFU9N20D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.4A (Tc) 10V 380mOhm @ 5.6A, 10V 5.5V @ 250µA 27 nC @ 10 V ±30V 560 pF @ 25 V - 86W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFUC20

IRFUC20

MOSFET N-CH 600V 2A TO251AA

Vishay Siliconix
3,814 -

RFQ

IRFUC20

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.4Ohm @ 1.2A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLU2705

IRLU2705

MOSFET N-CH 55V 28A I-PAK

Infineon Technologies
2,072 -

RFQ

IRLU2705

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 28A (Tc) 4V, 10V 40mOhm @ 17A, 10V 2V @ 250µA 25 nC @ 5 V ±16V 880 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7413A

IRF7413A

MOSFET N-CH 30V 12A 8SO

Infineon Technologies
2,918 -

RFQ

IRF7413A

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4.5V, 10V 13.5mOhm @ 6.6A, 10V 1V @ 250µA 79 nC @ 10 V ±20V 1800 pF @ 25 V - 2.5W (Ta) - Surface Mount
IRF7452

IRF7452

MOSFET N-CH 100V 4.5A 8SO

Infineon Technologies
2,373 -

RFQ

IRF7452

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 4.5A (Ta) 10V 60mOhm @ 2.7A, 10V 5.5V @ 250µA 50 nC @ 10 V ±30V 930 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7457

IRF7457

MOSFET N-CH 20V 15A 8SO

Infineon Technologies
3,111 -

RFQ

IRF7457

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 15A (Ta) 4.5V, 10V 7mOhm @ 15A, 10V 3V @ 250µA 42 nC @ 4.5 V ±20V 3100 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7459

IRF7459

MOSFET N-CH 20V 12A 8SO

Infineon Technologies
2,437 -

RFQ

IRF7459

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 12A (Ta) 2.8V, 10V 9mOhm @ 12A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2480 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7460

IRF7460

MOSFET N-CH 20V 12A 8SO

Infineon Technologies
2,850 -

RFQ

IRF7460

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 12A (Ta) 4.5V, 10V 10mOhm @ 12A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 2050 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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