Diodos - Retificadores de Ponte

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBJ2508-G

GBJ2508-G

BRIDGE RECT 1PHASE 800V 25A GBJ

Comchip Technology
3,939 -

RFQ

GBJ2508-G

Ficha técnica

Bulk - Active Single Phase Standard 800 V 25 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ2508-03-G

GBJ2508-03-G

BRIDGE RECT 1PHASE 800V 25A GBJ

Comchip Technology
2,907 -

RFQ

GBJ2508-03-G

Ficha técnica

Bulk - Active Single Phase Standard 800 V 25 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ2508-04-G

GBJ2508-04-G

BRIDGE RECT 1PHASE 800V 25A GBJ

Comchip Technology
2,718 -

RFQ

GBJ2508-04-G

Ficha técnica

Bulk - Active Single Phase Standard 800 V 25 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ2508-05-G

GBJ2508-05-G

BRIDGE RECT 1PHASE 800V 25A GBJ

Comchip Technology
2,867 -

RFQ

GBJ2508-05-G

Ficha técnica

Bulk - Active Single Phase Standard 800 V 25 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ2508-06-G

GBJ2508-06-G

BRIDGE RECT 1PHASE 800V 25A GBJ

Comchip Technology
2,185 -

RFQ

GBJ2508-06-G

Ficha técnica

Bulk - Active Single Phase Standard 800 V 25 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
TS35P05GH

TS35P05GH

BRIDGE RECT 1P 600V 35A TS-6P

Taiwan Semiconductor Corporation
2,320 -

RFQ

TS35P05GH

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 600 V 35 A 1.1 V @ 17.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS35P06GH

TS35P06GH

BRIDGE RECT 1P 800V 35A TS-6P

Taiwan Semiconductor Corporation
3,049 -

RFQ

TS35P06GH

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS35P07GH

TS35P07GH

BRIDGE RECT 1PHASE 1KV 35A TS-6P

Taiwan Semiconductor Corporation
2,282 -

RFQ

TS35P07GH

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS40P06GH

TS40P06GH

BRIDGE RECT 1P 800V 40A TS-6P

Taiwan Semiconductor Corporation
2,263 -

RFQ

TS40P06GH

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 800 V 40 A 1.1 V @ 20 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS40P07GH

TS40P07GH

BRIDGE RECT 1PHASE 1KV 40A TS-6P

Taiwan Semiconductor Corporation
2,468 -

RFQ

TS40P07GH

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 1 kV 40 A 1.1 V @ 20 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
GBJ2510-G

GBJ2510-G

BRIDGE RECT 1PHASE 1KV 25A GBJ

Comchip Technology
3,551 -

RFQ

GBJ2510-G

Ficha técnica

Tube - Active Single Phase Standard 1 kV 25 A 1 V @ 12.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ2510-03-G

GBJ2510-03-G

BRIDGE RECT 1PHASE 1KV 25A GBJ

Comchip Technology
2,352 -

RFQ

GBJ2510-03-G

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 25 A 1 V @ 12.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ2510-04-G

GBJ2510-04-G

BRIDGE RECT 1PHASE 1KV 25A GBJ

Comchip Technology
3,105 -

RFQ

GBJ2510-04-G

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 25 A 1 V @ 12.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ2510-05-G

GBJ2510-05-G

BRIDGE RECT 1PHASE 1KV 25A GBJ

Comchip Technology
2,472 -

RFQ

GBJ2510-05-G

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 25 A 1 V @ 12.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ2510-06-G

GBJ2510-06-G

BRIDGE RECT 1PHASE 1KV 25A GBJ

Comchip Technology
3,042 -

RFQ

GBJ2510-06-G

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 25 A 1 V @ 12.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBU1002

GBU1002

BRIDGE RECT 1PHASE 200V 10A GBU

Diodes Incorporated
3,797 -

RFQ

GBU1002

Ficha técnica

Tube - Active Single Phase Standard 200 V 10 A 1 V @ 5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU2006-E3/51

BU2006-E3/51

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
3,859 -

RFQ

BU2006-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 600 V 3.5 A 1.05 V @ 10 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
DFB2520

DFB2520

BRIDGE RECT 1PHASE 200V 25A TS6P

onsemi
3,903 -

RFQ

DFB2520

Ficha técnica

Tube,Tube - Active Single Phase Standard 200 V 25 A 1.1 V @ 25 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
BU1206-M3/45

BU1206-M3/45

BRIDGE RECT 1P 600V 12A BU

Vishay General Semiconductor - Diodes Division
3,938 -

RFQ

BU1206-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 12 A 1.05 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1208-M3/45

BU1208-M3/45

BRIDGE RECT 1P 800V 12A BU

Vishay General Semiconductor - Diodes Division
3,982 -

RFQ

BU1208-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 12 A 1.05 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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