Diodos - Retificadores de Ponte

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
BU1210-M3/45

BU1210-M3/45

BRIDGE RECT 1P 1KV 12A BU

Vishay General Semiconductor - Diodes Division
2,097 -

RFQ

BU1210-M3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 12 A 1.05 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GSIB15A20N-M3/45

GSIB15A20N-M3/45

BRIDGE RECT 1P 200V 15A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,536 -

RFQ

GSIB15A20N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 15 A 1 V @ 7.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB15A40N-M3/45

GSIB15A40N-M3/45

BRIDGE RECT 1P 400V 15A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,389 -

RFQ

GSIB15A40N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 15 A 1 V @ 7.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB15A60N-M3/45

GSIB15A60N-M3/45

BRIDGE RECT 1P 600V 15A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,338 -

RFQ

GSIB15A60N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 15 A 1 V @ 7.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB15A80N-M3/45

GSIB15A80N-M3/45

BRIDGE RECT 1P 800V 15A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,523 -

RFQ

GSIB15A80N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 15 A 1 V @ 7.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GBJ1004-F

GBJ1004-F

BRIDGE RECT 1PHASE 400V 10A GBJ

Diodes Incorporated
3,602 -

RFQ

GBJ1004-F

Ficha técnica

Tube - Active Single Phase Standard 400 V 10 A 1.05 V @ 5 A 10 µA @ 400 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
TS6P06G

TS6P06G

DIODE BRIDGE 6A 800V TS-6P

Taiwan Semiconductor Corporation
2,440 -

RFQ

Tube - Active Single Phase Standard 800 V 6 A 1.1 V @ 6 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS6P07G

TS6P07G

DIODE BRIDGE 6A 1000V TS-6P

Taiwan Semiconductor Corporation
3,396 -

RFQ

Tube - Active Single Phase Standard 1 kV 6 A 1.1 V @ 6 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
DFB2505

DFB2505

BRIDGE RECT 1PHASE 50V 25A TS6P

onsemi
2,291 -

RFQ

DFB2505

Ficha técnica

Bulk,Tube,Tube - Active Single Phase Standard 50 V 25 A 1.1 V @ 25 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
DFB2510

DFB2510

BRIDGE RECT 1PHASE 100V 25A TS6P

onsemi
3,659 -

RFQ

DFB2510

Ficha técnica

Bulk,Tube - Active Single Phase Standard 100 V 25 A 1.1 V @ 25 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
GSIB2020-E3/45

GSIB2020-E3/45

BRIDGE RECT 1P 200V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,105 -

RFQ

GSIB2020-E3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 3.5 A 1 V @ 10 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB2040-E3/45

GSIB2040-E3/45

BRIDGE RECT 1P 400V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,549 -

RFQ

GSIB2040-E3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 3.5 A 1 V @ 10 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
BU1506-M3/45

BU1506-M3/45

BRIDGE RECT 1P 600V 15A BU

Vishay General Semiconductor - Diodes Division
3,431 -

RFQ

BU1506-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 15 A 1.05 V @ 7.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1508-M3/45

BU1508-M3/45

BRIDGE RECT 1P 800V 15A BU

Vishay General Semiconductor - Diodes Division
2,507 -

RFQ

BU1508-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 15 A 1.05 V @ 7.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1510-M3/45

BU1510-M3/45

BRIDGE RECT 1P 1KV 15A BU

Vishay General Semiconductor - Diodes Division
2,244 -

RFQ

BU1510-M3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 15 A 1.05 V @ 7.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU2508-E3/51

BU2508-E3/51

BRIDGE RECT 1P 800V 3.5A BU

Vishay General Semiconductor - Diodes Division
3,697 -

RFQ

BU2508-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 800 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU2510-E3/51

BU2510-E3/51

BRIDGE RECT 1P 1KV 3.5A BU

Vishay General Semiconductor - Diodes Division
3,753 -

RFQ

BU2510-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 3.5 A 1.05 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GBU25KH

GBU25KH

BRIDGE RECTIFIER GBU T&R 20PCS

Diodes Incorporated
3,673 -

RFQ

GBU25KH

Ficha técnica

Tape & Reel (TR) - Active Single Phase Standard 800 V 25 A 1.05 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBJ25005-F

GBJ25005-F

BRIDGE RECT 1PHASE 50V 25A GBJ

Diodes Incorporated
2,868 -

RFQ

GBJ25005-F

Ficha técnica

Tube,Tube - Active Single Phase Standard 50 V 25 A 1.05 V @ 12.5 A 10 µA @ 50 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ1008-F

GBJ1008-F

BRIDGE RECT 1PHASE 800V 10A GBJ

Diodes Incorporated
3,109 -

RFQ

GBJ1008-F

Ficha técnica

Tube - Active Single Phase Standard 800 V 10 A 1.05 V @ 5 A 10 µA @ 800 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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