Diodos - Retificadores de Ponte

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
KBPC25010T

KBPC25010T

BRIDGE RECT 1P 1KV 25A KBPC-T

GeneSiC Semiconductor
2,152 -

RFQ

KBPC25010T

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 25 A 1.1 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, KBPC-T
BU25H06-M3/P

BU25H06-M3/P

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
3,426 -

RFQ

BU25H06-M3/P

Ficha técnica

Tube isoCink+™ Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 175°C (TJ) Through Hole 4-SIP, BU
BU25H08-M3/P

BU25H08-M3/P

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
2,673 -

RFQ

BU25H08-M3/P

Ficha técnica

Tube isoCink+™ Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 175°C (TJ) Through Hole 4-SIP, BU
BU25H06-E3/P

BU25H06-E3/P

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
3,087 -

RFQ

BU25H06-E3/P

Ficha técnica

Tube isoCink+™ Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 175°C (TJ) Through Hole 4-SIP, BU
BU25H08-E3/P

BU25H08-E3/P

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
3,415 -

RFQ

BU25H08-E3/P

Ficha técnica

Tube isoCink+™ Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 175°C (TJ) Through Hole 4-SIP, BU
GBJ3510-F

GBJ3510-F

BRIDGE RECT 1PHASE 1KV 3.6A GBJ

Diodes Incorporated
3,815 -

RFQ

GBJ3510-F

Ficha técnica

Tube - Active Single Phase Standard 1 kV 3.6 A 1.1 V @ 17.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
KBU1004G

KBU1004G

BRIDGE RECT 1PHASE 400V 10A KBU

Taiwan Semiconductor Corporation
2,831 -

RFQ

KBU1004G

Ficha técnica

Tray - Active Single Phase Standard 400 V 10 A 1.1 V @ 10 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU1006G

KBU1006G

BRIDGE RECT 1PHASE 800V 10A KBU

Taiwan Semiconductor Corporation
2,708 -

RFQ

KBU1006G

Ficha técnica

Tray - Active Single Phase Standard 800 V 10 A 1.1 V @ 10 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
BR108

BR108

BRIDGE RECT 1P 800V 10A BR-10

GeneSiC Semiconductor
2,353 -

RFQ

BR108

Ficha técnica

Bulk - Active Single Phase Standard 800 V 10 A 1.1 V @ 5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-Square, BR-10
GBJ35005-BP

GBJ35005-BP

BRIDGE RECT 1PHASE 50V 35A GBJ

Micro Commercial Co
3,047 -

RFQ

GBJ35005-BP

Ficha técnica

Tube - Active Single Phase Standard 50 V 35 A 1.05 V @ 17.5 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ3504-BP

GBJ3504-BP

BRIDGE RECT 1PHASE 400V 35A GBJ

Micro Commercial Co
3,113 -

RFQ

GBJ3504-BP

Ficha técnica

Tube - Active Single Phase Standard 400 V 35 A 1.05 V @ 17.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
MB1505W-BP

MB1505W-BP

BRIDGE RECT 1P 50V 15A MB-35W

Micro Commercial Co
2,425 -

RFQ

MB1505W-BP

Ficha técnica

Bulk - Active Single Phase Standard 50 V 15 A 1.2 V @ 7.5 A 10 µA @ 50 V -55°C ~ 125°C (TJ) Through Hole 4-Square, MB-35W
KBPC35010T

KBPC35010T

BRIDGE RECT 1P 1KV 35A KBPC-T

GeneSiC Semiconductor
2,783 -

RFQ

KBPC35010T

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, KBPC-T
BU2508-M3/45

BU2508-M3/45

BRIDGE RECT 1P 800V 3.5A BU

Vishay General Semiconductor - Diodes Division
2,642 -

RFQ

BU2508-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU2510-M3/45

BU2510-M3/45

BRIDGE RECT 1P 1KV 3.5A BU

Vishay General Semiconductor - Diodes Division
2,862 -

RFQ

BU2510-M3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 3.5 A 1.05 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
MP358W-BP

MP358W-BP

BRIDGE RECT 1P 800V 35A MP-50WW

Micro Commercial Co
2,383 -

RFQ

MP358W-BP

Ficha técnica

Bulk - Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 5 µA @ 800 V -55°C ~ 150°C Through Hole 4-Square, MP-50W
KBPC15005T

KBPC15005T

BRIDGE RECT 1PHASE 50V 15A KBPC

GeneSiC Semiconductor
3,329 -

RFQ

KBPC15005T

Ficha técnica

Bulk - Active Single Phase Standard 50 V 15 A 1.1 V @ 7.5 A 5 µA @ 50 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, KBPC-T
KBPC1501T

KBPC1501T

BRIDGE RECT 1PHASE 100V 15A KBPC

GeneSiC Semiconductor
3,497 -

RFQ

KBPC1501T

Ficha técnica

Bulk - Active Single Phase Standard 100 V 15 A 1.1 V @ 7.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, KBPC-T
KBPC1502T

KBPC1502T

BRIDGE RECT 1PHASE 200V 15A KBPC

GeneSiC Semiconductor
3,497 -

RFQ

KBPC1502T

Ficha técnica

Bulk - Active Single Phase Standard 200 V 15 A 1.1 V @ 7.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, KBPC-T
KBPC1504T

KBPC1504T

BRIDGE RECT 1PHASE 400V 15A KBPC

GeneSiC Semiconductor
2,995 -

RFQ

KBPC1504T

Ficha técnica

Bulk - Active Single Phase Standard 400 V 15 A 1.1 V @ 7.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, KBPC-T
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1500+ Média diária de RFQ
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1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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