Diodos - Retificadores de Ponte

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBJ25005-BP

GBJ25005-BP

BRIDGE RECT 1PHASE 50V 25A GBJ

Micro Commercial Co
3,124 -

RFQ

GBJ25005-BP

Ficha técnica

Tube - Active Single Phase Standard 50 V 25 A 1.05 V @ 12.5 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBU2508-BP

GBU2508-BP

BRIDGE RECT 1PHASE 800V 25A GBU

Micro Commercial Co
3,476 -

RFQ

GBU2508-BP

Ficha técnica

Bulk - Active Single Phase Standard 800 V 25 A 1.1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C Through Hole 4-SIP, GBU
KBU404G

KBU404G

BRIDGE RECT 1PHASE 400V 4A KBU

Taiwan Semiconductor Corporation
2,008 -

RFQ

KBU404G

Ficha técnica

Tray - Active Single Phase Standard 400 V 4 A 1.1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU405G

KBU405G

BRIDGE RECT 1PHASE 600V 4A KBU

Taiwan Semiconductor Corporation
3,611 -

RFQ

KBU405G

Ficha técnica

Tray - Active Single Phase Standard 600 V 4 A 1.1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU406G

KBU406G

BRIDGE RECT 1PHASE 800V 4A KBU

Taiwan Semiconductor Corporation
2,033 -

RFQ

KBU406G

Ficha técnica

Tray - Active Single Phase Standard 800 V 4 A 1.1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU407G

KBU407G

BRIDGE RECT 1PHASE 1KV 4A KBU

Taiwan Semiconductor Corporation
3,332 -

RFQ

KBU407G

Ficha técnica

Tray - Active Single Phase Standard 1 kV 4 A 1.1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBPC15010T

KBPC15010T

BRIDGE RECT 1P 1KV 15A KBPC-T

GeneSiC Semiconductor
2,559 -

RFQ

KBPC15010T

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 15 A 1.1 V @ 7.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, KBPC-T
TS50P05G

TS50P05G

BRIDGE RECT 1P 600V 50A TS-6P

Taiwan Semiconductor Corporation
2,800 -

RFQ

TS50P05G

Ficha técnica

Tube - Active Single Phase Standard 600 V 50 A 1.1 V @ 25 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS50P06G

TS50P06G

BRIDGE RECT 1P 800V 50A TS-6P

Taiwan Semiconductor Corporation
2,323 -

RFQ

TS50P06G

Ficha técnica

Tube - Active Single Phase Standard 800 V 50 A 1.1 V @ 25 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
BU2506-M3/51

BU2506-M3/51

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
3,215 -

RFQ

BU2506-M3/51

Ficha técnica

Tray - Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU2508-M3/51

BU2508-M3/51

BRIDGE RECT 1P 800V 3.5A BU

Vishay General Semiconductor - Diodes Division
3,105 -

RFQ

BU2508-M3/51

Ficha técnica

Tray - Active Single Phase Standard 800 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU2510-M3/51

BU2510-M3/51

BRIDGE RECT 1P 1KV 3.5A BU

Vishay General Semiconductor - Diodes Division
3,881 -

RFQ

BU2510-M3/51

Ficha técnica

Tray - Active Single Phase Standard 1 kV 3.5 A 1.05 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GBJ1010-F

GBJ1010-F

BRIDGE RECT 1PHASE 1KV 10A GBJ

Diodes Incorporated
3,734 -

RFQ

GBJ1010-F

Ficha técnica

Tube - Active Single Phase Standard 1 kV 10 A 1.05 V @ 5 A 10 µA @ 1000 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
BU2006-M3/45

BU2006-M3/45

BRIDGE RECT 1P 600V 20A BU

Vishay General Semiconductor - Diodes Division
2,091 -

RFQ

BU2006-M3/45

Ficha técnica

Bulk - Active Single Phase Standard 600 V 20 A 1.05 V @ 10 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU2008-M3/45

BU2008-M3/45

BRIDGE RECT 1P 800V 20A BU

Vishay General Semiconductor - Diodes Division
2,812 -

RFQ

BU2008-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 20 A 1.05 V @ 10 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
KBU804G

KBU804G

BRIDGE RECT 1PHASE 400V 8A KBU

Taiwan Semiconductor Corporation
3,788 -

RFQ

KBU804G

Ficha técnica

Tray - Active Single Phase Standard 400 V 8 A 1.1 V @ 8 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU805G

KBU805G

BRIDGE RECT 1PHASE 600V 8A KBU

Taiwan Semiconductor Corporation
2,503 -

RFQ

KBU805G

Ficha técnica

Tray - Active Single Phase Standard 600 V 8 A 1.1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU806G

KBU806G

BRIDGE RECT 1PHASE 800V 8A KBU

Taiwan Semiconductor Corporation
3,151 -

RFQ

KBU806G

Ficha técnica

Tray - Active Single Phase Standard 800 V 8 A 1.1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU1003G

KBU1003G

DIODE BRIDGE 10A 200V KBU

Taiwan Semiconductor Corporation
2,246 -

RFQ

Tray - Active Single Phase Standard 200 V 10 A 1.1 V @ 10 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
GBPC15010T

GBPC15010T

BRIDGE RECT 1P 1KV 15A GBPC-T

GeneSiC Semiconductor
3,778 -

RFQ

Bulk - Active Single Phase Standard 1 kV 15 A 1.1 V @ 7.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC-T
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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