Diodos - Retificadores de Ponte

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBJ808-F

GBJ808-F

BRIDGE RECT 1PHASE 800V 8A GBJ

Diodes Incorporated
2,523 -

RFQ

GBJ808-F

Ficha técnica

Tube - Active Single Phase Standard 800 V 8 A 1 V @ 4 A 5 µA @ 800 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ2502-F

GBJ2502-F

BRIDGE RECT 1PHASE 200V 25A GBJ

Diodes Incorporated
3,735 -

RFQ

GBJ2502-F

Ficha técnica

Tube,Tube - Active Single Phase Standard 200 V 25 A 1.05 V @ 12.5 A 10 µA @ 200 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
BU2006-M3/51

BU2006-M3/51

BRIDGE RECT 1P 600V 20A BU

Vishay General Semiconductor - Diodes Division
3,291 -

RFQ

BU2006-M3/51

Ficha técnica

Tray - Active Single Phase Standard 600 V 20 A 1.05 V @ 10 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU2008-M3/51

BU2008-M3/51

BRIDGE RECT 1P 800V 20A BU

Vishay General Semiconductor - Diodes Division
2,885 -

RFQ

BU2008-M3/51

Ficha técnica

Tray - Active Single Phase Standard 800 V 20 A 1.05 V @ 10 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU2010-M3/51

BU2010-M3/51

BRIDGE RECT 1P 1KV 20A BU

Vishay General Semiconductor - Diodes Division
2,550 -

RFQ

BU2010-M3/51

Ficha técnica

Tray - Active Single Phase Standard 1 kV 20 A 1.05 V @ 10 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
KBU603G

KBU603G

DIODE BRIDGE 6A 200V KBU

Taiwan Semiconductor Corporation
2,097 -

RFQ

Tray - Active Single Phase Standard 200 V 6 A 1.1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
GSIB1520N-M3/45

GSIB1520N-M3/45

BRIDGE RECT 1P 200V 15A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,836 -

RFQ

GSIB1520N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 15 A 950 mV @ 7.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB1540N-M3/45

GSIB1540N-M3/45

BRIDGE RECT 1P 400V 15A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,888 -

RFQ

GSIB1540N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 15 A 950 mV @ 7.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB1560N-M3/45

GSIB1560N-M3/45

BRIDGE RECT 1P 600V 15A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,930 -

RFQ

GSIB1560N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 15 A 950 mV @ 7.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB2020N-M3/45

GSIB2020N-M3/45

BRIDGE RECT 1P 200V 20A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,989 -

RFQ

GSIB2020N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 20 A 1 V @ 7.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB2040N-M3/45

GSIB2040N-M3/45

BRIDGE RECT 1P 400V 20A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,152 -

RFQ

GSIB2040N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 20 A 1 V @ 7.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB2060N-M3/45

GSIB2060N-M3/45

BRIDGE RECT 1P 600V 20A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,793 -

RFQ

GSIB2060N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 20 A 1 V @ 7.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB2080N-M3/45

GSIB2080N-M3/45

BRIDGE RECT 1P 800V 20A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,512 -

RFQ

GSIB2080N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 20 A 1 V @ 7.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
BU25H06-E3/A

BU25H06-E3/A

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
3,178 -

RFQ

BU25H06-E3/A

Ficha técnica

Tray isoCink+™ Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 175°C (TJ) Through Hole 4-SIP, BU
BU25H08-E3/A

BU25H08-E3/A

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
2,356 -

RFQ

BU25H08-E3/A

Ficha técnica

Tray isoCink+™ Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 175°C (TJ) Through Hole 4-SIP, BU
BU25H06-M3/A

BU25H06-M3/A

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
2,247 -

RFQ

BU25H06-M3/A

Ficha técnica

Tray isoCink+™ Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 175°C (TJ) Through Hole 4-SIP, BU
BU25H08-M3/A

BU25H08-M3/A

BRIDGE RECT 1P 800V 3.5A BU

Vishay General Semiconductor - Diodes Division
2,165 -

RFQ

BU25H08-M3/A

Ficha técnica

Tray isoCink+™ Active Single Phase Standard 800 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 800 V -55°C ~ 175°C (TJ) Through Hole 4-SIP, BU
KBU604G

KBU604G

BRIDGE RECT 1PHASE 400V 6A KBU

Taiwan Semiconductor Corporation
2,084 -

RFQ

KBU604G

Ficha técnica

Tray - Active Single Phase Standard 400 V 6 A 1.1 V @ 6 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU605G

KBU605G

BRIDGE RECT 1PHASE 600V 6A KBU

Taiwan Semiconductor Corporation
3,927 -

RFQ

KBU605G

Ficha técnica

Tray - Active Single Phase Standard 600 V 6 A 1.1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU606G

KBU606G

BRIDGE RECT 1PHASE 800V 6A KBU

Taiwan Semiconductor Corporation
3,381 -

RFQ

KBU606G

Ficha técnica

Tray - Active Single Phase Standard 800 V 6 A 1.1 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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